18th International Symposium on VLSI Design and Test最新文献

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Power optimized PLL implementation in 180nm CMOS technology 功率优化锁相环实现在180nm CMOS技术
18th International Symposium on VLSI Design and Test Pub Date : 2014-07-16 DOI: 10.1109/ISVDAT.2014.6881065
S. Patri, P. Devulapalli, Dhananjay Kewale, Omkar Asbe, K. Prasad
{"title":"Power optimized PLL implementation in 180nm CMOS technology","authors":"S. Patri, P. Devulapalli, Dhananjay Kewale, Omkar Asbe, K. Prasad","doi":"10.1109/ISVDAT.2014.6881065","DOIUrl":"https://doi.org/10.1109/ISVDAT.2014.6881065","url":null,"abstract":"This paper describes the design of power optimized phase locked loop for frequency synthesis, Clock and Data recovery, carrier synchronization and many more communication and VLSI applications. PLL consist of Phase Frequency Detector, charge pump along with passive low pass filter and wide tuning VCO. A modified ring oscillator with tuning range of 280 MHz to 2.47GHz and phase noise of -112.4dBc/Hz at 1MHz offset is designed. Frequency Detector consist of DFF along with CMOS gates with low power architectures. Traditional charge pump, passive low pass filter, modified ring oscillator and divider for frequency synthesis offers less power and system noise. PLL proposed here has lock in range from 500MHz to 1GHz with output frequency ranging from 1GHz to 2GHz, maximum pull in time of 244ns and maximum power consumed is 252μW at 2GHz.","PeriodicalId":217280,"journal":{"name":"18th International Symposium on VLSI Design and Test","volume":"90 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120918502","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Cryptanalysis of Composite PUFs (Extended abstract-invited talk) 复合puf的密码分析(扩展摘要-邀请讲座)
18th International Symposium on VLSI Design and Test Pub Date : 2014-07-16 DOI: 10.1109/ISVDAT.2014.6881035
Phuong Ha Nguyen, D. Sahoo, Debdeep Mukhopadhyay, R. Chakraborty
{"title":"Cryptanalysis of Composite PUFs (Extended abstract-invited talk)","authors":"Phuong Ha Nguyen, D. Sahoo, Debdeep Mukhopadhyay, R. Chakraborty","doi":"10.1109/ISVDAT.2014.6881035","DOIUrl":"https://doi.org/10.1109/ISVDAT.2014.6881035","url":null,"abstract":"In recent years, Physcially Unclonable Functions (PUFs) have become important cryptographic primitive and are used in secure systems to resist physical attacks. Since PUFs have many useful properties such as memory-leakage resilience, unclonablity, tampering-resistance, PUF has drawn great interest in academia as well as industry. As extremely useful hardware security primitives, PUFs are used in various proposed applications such as device authentication and identification, random number generation, and intellectual property protection. One of important requirement to PUFs is that PUFs should have small hardware overhead in order to be utilized in lightweight application such as RFID. To achieve this goal, Composite PUFs are developed and introduced in RECONFIG2013 and HOST2014. In a nutshell, Composite PUFs are built by using many small PUFs primitives. In this talk, we show that Composite PUFs introduced in RECONFIG2013 are not secure by presenting its cryptanalysis.","PeriodicalId":217280,"journal":{"name":"18th International Symposium on VLSI Design and Test","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124953873","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
A novel architecture for QPSK modulation based on time-mode signal processing 一种基于时模信号处理的QPSK调制新架构
18th International Symposium on VLSI Design and Test Pub Date : 2014-07-16 DOI: 10.1109/ISVDAT.2014.6881056
S. Saha, B. Kar, S. Sur-Kolay
{"title":"A novel architecture for QPSK modulation based on time-mode signal processing","authors":"S. Saha, B. Kar, S. Sur-Kolay","doi":"10.1109/ISVDAT.2014.6881056","DOIUrl":"https://doi.org/10.1109/ISVDAT.2014.6881056","url":null,"abstract":"With shrinking process technology, the scale of integration has increased significantly for digital design. Therefore, the increase in operating frequency, and attempt to reduce area and power has been addressed to large extent. On the contrary, it has lesser impact on its analog counterpart and has not been able to catch up with the respective design metrics pertaining to digital design. This paper presents a new design method for Quadrature Phase Shift Keying (QPSK) modulation technique using Time Mode Signal Processing (TMSP) technique. This method uses a digital clock signal acting as the carrier signal and thus provides a digital interface at the output. A 2 bit input digital code modulates the delay of the clock and hence carries the information in it. The proposed design yields a low voltage and low power alternative to its known analog counterparts. We implemented the design using 0.18μm TSMC CMOS technology. The power supply is kept at 2V, while the carrier frequency remains 250MHz. The results for both pre and post-layout simulations yield significant improvement in layout area, power dissipation and signal-to-noise ratio (SNR) as compared to a conventional design for QPSK modulation.","PeriodicalId":217280,"journal":{"name":"18th International Symposium on VLSI Design and Test","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124380197","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A New Recursive Partitioning Multicast Routing Algorithm for 3D Network-on-Chip 一种新的三维片上网络递归分区组播路由算法
18th International Symposium on VLSI Design and Test Pub Date : 2014-07-16 DOI: 10.1109/ISVDAT.2014.6881040
Narendra Kumar Meena, H. Kapoor, Shounak Chakraborty
{"title":"A New Recursive Partitioning Multicast Routing Algorithm for 3D Network-on-Chip","authors":"Narendra Kumar Meena, H. Kapoor, Shounak Chakraborty","doi":"10.1109/ISVDAT.2014.6881040","DOIUrl":"https://doi.org/10.1109/ISVDAT.2014.6881040","url":null,"abstract":"Network on chip (NoC) provides a fast and scalable interconnect for communication between many IP cores and System on Chips (SoCs). As the number of on chip elements increase to fulfill the demand of high performance computing, scalable and efficient communication infrastructure is required for higher levels of integration, for which 3D NoCs have evolved. Multicast communication provides a better solution for many cache coherence protocols and parallel algorithms. This paper proposes a New Recursive Partitioning Multicast Routing Algorithm (3D-RPM) along with its optimized version, a New Optimized Recursive Partitioning Multicast Routing Algorithm (3D-ORPM) for 3D mesh networks. Simulation results show around 8-13% reduction in percentage link utilization and link power consumed for the proposed approach compared to the tree based 3D-XYZ multicast routing algorithm. Results show that the approach is scalable for larger networks, as well as large number of multicast destinations.","PeriodicalId":217280,"journal":{"name":"18th International Symposium on VLSI Design and Test","volume":"230 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115750715","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
A positive level shifter for high speed symmetric switching in flash memories 用于快闪存储器中高速对称开关的正电平移位器
18th International Symposium on VLSI Design and Test Pub Date : 2014-07-16 DOI: 10.1109/ISVDAT.2014.6881064
Rohan Sinha, M. Hashmi, G. Kumar
{"title":"A positive level shifter for high speed symmetric switching in flash memories","authors":"Rohan Sinha, M. Hashmi, G. Kumar","doi":"10.1109/ISVDAT.2014.6881064","DOIUrl":"https://doi.org/10.1109/ISVDAT.2014.6881064","url":null,"abstract":"In this paper, a novel positive level shifter is designed for high speed interfacing between the digital circuits operating at 1.2V and the memory core circuits operating at high voltages in flash memories. The proposed design is also validated for a wide range of output voltage levels and has been optimized to perform efficiently across the different process corners and temperatures. For the targeted design of 1.2V and 33 MHz input signal to 4V output signal, the level shifter has a symmetric switching speed with a rise time and fall time of 2ns and 1.89ns respectively while the average power consumption of 0.056mW is obtained in the typical condition. Simulation results are compared with various other conventional positive level shifters at different process corners and temperatures.","PeriodicalId":217280,"journal":{"name":"18th International Symposium on VLSI Design and Test","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132530877","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
An empirical delta delay model for highly scaled CMOS inverter considering Well Proximity Effect 考虑井邻近效应的大尺度CMOS逆变器经验delta延迟模型
18th International Symposium on VLSI Design and Test Pub Date : 2014-07-16 DOI: 10.1109/ISVDAT.2014.6881062
Bijay Kumar Dalai, N. Karnnan, A. Sharma, B. Anand
{"title":"An empirical delta delay model for highly scaled CMOS inverter considering Well Proximity Effect","authors":"Bijay Kumar Dalai, N. Karnnan, A. Sharma, B. Anand","doi":"10.1109/ISVDAT.2014.6881062","DOIUrl":"https://doi.org/10.1109/ISVDAT.2014.6881062","url":null,"abstract":"As the semiconductor industry is moving down to deep-sub micron era (below 45nm), Well Proximity Effect (WPE) is causing significant variations in device performance. This may impact the functionality and performance of circuit designs in highly scaled CMOS technologies. In this work, we have studied the impact of WPE on standard cells and propose an empirical delta-delay model for an inverter in 28nm technology node as a function of well to poly edge distance. Our model can be extended for other standard cells and can be used for context aware standard cell library characterization considering WPE.","PeriodicalId":217280,"journal":{"name":"18th International Symposium on VLSI Design and Test","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114387161","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An analytic potential and threshold voltage model for short-channel symmetric double-gate MOSFET 短沟道对称双栅MOSFET的解析电位和阈值电压模型
18th International Symposium on VLSI Design and Test Pub Date : 2014-07-16 DOI: 10.1109/ISVDAT.2014.6881048
V. Yadav, R. K. Baruah
{"title":"An analytic potential and threshold voltage model for short-channel symmetric double-gate MOSFET","authors":"V. Yadav, R. K. Baruah","doi":"10.1109/ISVDAT.2014.6881048","DOIUrl":"https://doi.org/10.1109/ISVDAT.2014.6881048","url":null,"abstract":"This paper presents a simple analytical model for potential and threshold voltage for short-channel lightly doped symmetric double-gate (DG) metal-oxide-semiconductor field-effect transistor (MOSFET). We have derived an expression for potential by solving 2D Poisson's equation including both fixed and the mobile-charge term with Boltzmann's approximation. Potential is plotted with respect to channel width and gate voltage. Then equation for minimum potential is obtained and used to formulate the threshold voltage. The threshold voltage roll-off and DIBL are performed. The model is valid from weak to strong inversion of operation.","PeriodicalId":217280,"journal":{"name":"18th International Symposium on VLSI Design and Test","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122057340","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
VLSI design of fast fractal image encoder 快速分形图像编码器的VLSI设计
18th International Symposium on VLSI Design and Test Pub Date : 2014-07-16 DOI: 10.1109/ISVDAT.2014.6881071
M. Panigrahy, I. Chakrabarti, A. Dhar
{"title":"VLSI design of fast fractal image encoder","authors":"M. Panigrahy, I. Chakrabarti, A. Dhar","doi":"10.1109/ISVDAT.2014.6881071","DOIUrl":"https://doi.org/10.1109/ISVDAT.2014.6881071","url":null,"abstract":"A fast search based architecture for fractal image encoder, which efficiently exploits parallelism, is proposed. Speed up in encoding is achieved through parallel processing by finding data independency in different mathematical operations carried out in fractal encoding. This architecture requires 531 milli seconds to encode a 256×256 gray scale image at maximum clock frequency of 73.11 MHz. Thus, proposed architecture can be considered as a successful approach for real time application for image compression.","PeriodicalId":217280,"journal":{"name":"18th International Symposium on VLSI Design and Test","volume":"110 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123594731","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Hardware accelerator for real-time image resizing 用于实时图像调整大小的硬件加速器
18th International Symposium on VLSI Design and Test Pub Date : 2014-07-16 DOI: 10.1109/ISVDAT.2014.6881070
Pranav Narayan Gour, S. Narumanchi, Sumeet Saurav, Sanjay Singh
{"title":"Hardware accelerator for real-time image resizing","authors":"Pranav Narayan Gour, S. Narumanchi, Sumeet Saurav, Sanjay Singh","doi":"10.1109/ISVDAT.2014.6881070","DOIUrl":"https://doi.org/10.1109/ISVDAT.2014.6881070","url":null,"abstract":"An accurate, hardware efficient and fast image rescaling unit is a crucial part of any real-time image processing system. Although there are a number of image scaling algorithms existing in the literature but Bicubic and Bilinear interpolation algorithms are most widely used. In the recent years, numerous algorithms have been proposed that aim to bridge the gap between these two standard algorithms, by attempting to provide high image quality of the former while maintaining the computational simplicity of the latter. This paper proposes a novel image resizing algorithm which uses a four-part piecewise linear function that closely mimics the behavior of the bicubic kernel, and thus provides high quality resized images comparable to Bicubic interpolation while having a much lower computational cost. An optimized architecture is proposed to implement this algorithm which features a high re-use of hardware units for coefficient generation so that the hardware cost is comparable to that of bilinear interpolation. The architecture and algorithm have been designed in tandem so as to meet the real-time requirements of applications such as automated video surveillance, requiring minimal hardware use without compromising on image quality.","PeriodicalId":217280,"journal":{"name":"18th International Symposium on VLSI Design and Test","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121304686","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
Operation-aware assist circuit design for improved write performance of FinFET based SRAM 改进基于FinFET的SRAM写入性能的操作感知辅助电路设计
18th International Symposium on VLSI Design and Test Pub Date : 2014-07-16 DOI: 10.1109/ISVDAT.2014.6881063
Ekta Prajapati, N. Yadav, M. Pattanaik, G. K. Sharma
{"title":"Operation-aware assist circuit design for improved write performance of FinFET based SRAM","authors":"Ekta Prajapati, N. Yadav, M. Pattanaik, G. K. Sharma","doi":"10.1109/ISVDAT.2014.6881063","DOIUrl":"https://doi.org/10.1109/ISVDAT.2014.6881063","url":null,"abstract":"Aggressively scaled SRAM is highly vulnerable to short channel and process variation effects. FinFET technology emerges as a device level solution to overcome these scaling limitations while assist techniques aid super-scaled SRAM to achieve better performance and stability. In this paper, we propose two operation-aware assist circuits, namely, Split and Suppressed cell Supply (SSS) and Negative Bit-Line scheme incorporated SSS (SSS-NBL) to provide better write performance without compromising read performance. We exploit cell supply collapse scheme in SSS to achieve low power consumption and improved write performance whereas SSS-NBL further ameliorates write performance. A new analytical model is derived for SSS-NBL. Simulation results reflect an improvement of 0.53% in read performance of 6T SRAM cell whereas 34.02% and 27.86% in write performance using SSS for 6T and PPN-based 10T SRAM cell, respectively. Similarly, SSS-NBL offers 37% and 32.63% improved write performance over 6T and PPN-based 10T bit-cell, respectively.","PeriodicalId":217280,"journal":{"name":"18th International Symposium on VLSI Design and Test","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126602735","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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