Semiconductor Science and Technology最新文献_第3页

Study on a p-GaN HEMT with composite passivation and composite barrier layers 具有复合钝化层和复合阻挡层的 p-GaN HEMT 研究

IF 1.9 4区工程技术

Semiconductor Science and Technology Pub Date : 2024-07-03 DOI: 10.1088/1361-6641/ad5b80

Junji Cheng, Queyang Wang, Yikai Liu, Guo Ding, Minming Zhang, Bo Yi, Haimeng Huang and Hongqiang Yang

{"title":"Study on a p-GaN HEMT with composite passivation and composite barrier layers","authors":"Junji Cheng, Queyang Wang, Yikai Liu, Guo Ding, Minming Zhang, Bo Yi, Haimeng Huang and Hongqiang Yang","doi":"10.1088/1361-6641/ad5b80","DOIUrl":"https://doi.org/10.1088/1361-6641/ad5b80","url":null,"abstract":"A novel structure of p-GaN high-electron-mobility transistor (HEMT) is proposed and studied. It features two composite layers. One is the composite passivation (CP) layer consisting of Si3N4 and high-permittivity (HK) film. The other is a composite barrier (CB) layer consisting of AlxGa1−xN/AlN/Al0.23Ga0.77N. Due to the coordinated effect of CP and CB, the specific on-resistance (RON, SP) can be reduced under the premise of ensuring breakdown voltage (BV). Meanwhile, since the HK film in CP introduces a mechanism to automatically compensate the hot electrons trapped by surface states, the current collapse effect could be suppressed. According to the simulation results, in comparison with the conventional p-GaN HEMT, the proposed one using TiO2 as the HK material and using Al-component of 0.35 for AlxGa1−xN gains a 29.5% reduction in RON, SP while getting a 9.8% increase in BV, which contributes to a 50.5% decrease in the energy loss during one cycle at 200 kHz. It is also demonstrated by the simulation results that the current collapse in the proposed device is reduced by 28.6%. Thereby, a promising p-GaN HEMT with improved performance and reliability is invented.","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":"50 1","pages":""},"PeriodicalIF":1.9,"publicationDate":"2024-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141551898","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Impact of NaOH solution surface treatment on Al2O3/β-Ga2O3 MOS capacitors NaOH 溶液表面处理对 Al2O3/β-Ga2O3 MOS 电容器的影响

IF 1.9 4区工程技术

Semiconductor Science and Technology Pub Date : 2024-07-02 DOI: 10.1088/1361-6641/ad59bc

Paiwen Fang, Zhengyi Liao, Danni Su, Jun Liang, Xinzhong Wang and Yanli Pei

引用次数: 0

Microscopy studies of InGaN MQWs overgrown on porosified InGaN superlattice pseudo-substrates 在多孔化 InGaN 超晶格伪基底上叠加生长的 InGaN MQW 的显微镜研究

IF 1.9 4区工程技术

Semiconductor Science and Technology Pub Date : 2024-06-23 DOI: 10.1088/1361-6641/ad575b

Yihong Ji, Martin Frentrup, Simon M Fairclough, Yingjun Liu, Tongtong Zhu and Rachel A Oliver

{"title":"Microscopy studies of InGaN MQWs overgrown on porosified InGaN superlattice pseudo-substrates","authors":"Yihong Ji, Martin Frentrup, Simon M Fairclough, Yingjun Liu, Tongtong Zhu and Rachel A Oliver","doi":"10.1088/1361-6641/ad575b","DOIUrl":"https://doi.org/10.1088/1361-6641/ad575b","url":null,"abstract":"In this study, possible origins of small V-pits observed in multiple quantum wells (MQWs) overgrown on as-grown and porosified InGaN superlattice (SL) pseudo-substrates have been investigated. Various cross-sectional transmission microscopy techniques revealed that some of the small V-pits arise from the intersection of threading defects with the sample surface, either as part of dislocation loops or trench defects. Some small V-pits without threading defects are also observed. Energy dispersive x-ray study indicates that the Indium content in the MQWs increases with the averaged porosity of the underlying template, which may either be attributed to a reduced compositional pulling effect or the low thermal conductivity of the porous layer. Furthermore, the porous structure inhibits the glide or extension of the misfit dislocations (MD) within the InGaN SL. The extra strain induced by the higher Indium content and the hindered movement of the MDs combined may explain the observed additional small V-pits present on the MQWs overgrown on the more relaxed templates.","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":"8 1","pages":""},"PeriodicalIF":1.9,"publicationDate":"2024-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141500860","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Recent advances and prospects for a GaN-based hybrid type ultraviolet photodetector 基于氮化镓的混合型紫外线光电探测器的最新进展和前景

IF 1.9 4区工程技术

Semiconductor Science and Technology Pub Date : 2024-06-19 DOI: 10.1088/1361-6641/ad5100

Jiaxin Zhang, Liqiong Deng, Shihong Xia, Chenyu Guo, Kunzi Liu, Li Chen, Wei Liu, Hui Xiao, Zhenhai Yang, Wei Guo and Jichun Ye

{"title":"Recent advances and prospects for a GaN-based hybrid type ultraviolet photodetector","authors":"Jiaxin Zhang, Liqiong Deng, Shihong Xia, Chenyu Guo, Kunzi Liu, Li Chen, Wei Liu, Hui Xiao, Zhenhai Yang, Wei Guo and Jichun Ye","doi":"10.1088/1361-6641/ad5100","DOIUrl":"https://doi.org/10.1088/1361-6641/ad5100","url":null,"abstract":"Solid-state ultraviolet (UV) photodetectors (PDs) have received significant attention due to their advantages of small size, absence of external cooling, high selectivity and the ability to utilize the energy band structure semiconductor materials to achieve detection across various wavelengths. III-nitride thin films, as typical wide bandgap semiconductors with mature n-type and p-type doping capabilities, are ideal candidates for solid-state UV-PDs. However, a combination of III-nitride and other wide bandgap materials can either enrich the functionality of devices such as spectrum-selective and broadband UV detectionor offer opportunities to enhance device performance, including high photoresponsivity, high external quantum efficiency, low dark current and fast response time. This topical review focuses on giving a thorough review of the III-nitride-based hybrid-type UV PDs, their recent progress and future prospects. We highlight the different optical and electrical properties of various materials including GaN, Ga2O3, ZnO, perovskite, etc. By carefully choosing the materials on both sides of the heterojunction and modulating the thickness and Fermi levels and corresponding layers, p–i–n, Schottky or metal–semiconductor–metal-type PDs were successfully fabricated. They displayed outstanding device performance and novel spectral-selective properties. The advantages for future development of these hybrid-type PDs will be discussed, such as inherently formed p–n junction with large depletion regions at the interface of two different materials and capability of bandgap engineering to tune the band offset between the conduction and valence bands, thus enabling large barrier height for one type of carrier without influencing the other. The drawbacks of hybrid-type UV-PD due to poor interface quality and challenges in forming electrical contact in nanostructured hybrid UV-PD will also be discussed.","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":"12 1","pages":""},"PeriodicalIF":1.9,"publicationDate":"2024-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141500912","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Investigation of the forward gate leakage current in pGaN/AlGaN/GaN HEMTs through TCAD simulations 通过 TCAD 仿真研究 pGaN/AlGaN/GaN HEMT 的正向栅极漏电流

IF 1.9 4区工程技术

Semiconductor Science and Technology Pub Date : 2024-06-17 DOI: 10.1088/1361-6641/ad5041

Arghyadeep Sarkar

{"title":"Investigation of the forward gate leakage current in pGaN/AlGaN/GaN HEMTs through TCAD simulations","authors":"Arghyadeep Sarkar","doi":"10.1088/1361-6641/ad5041","DOIUrl":"https://doi.org/10.1088/1361-6641/ad5041","url":null,"abstract":"In this study, we examined the gate leakage characteristics of normally off pGaN/AlGaN/GaN HEMTs through a simulation study. The Fowler Nordheim Tunneling (FNT) mechanism mainly contributes to the gate leakage process as indicated by the Technology Computer-Aided Design (TCAD) simulation. However, at low bias, the FNT undercalculates the leakage current since the electric field is low in this region. This extra leakage current component at this low bias region can be attributed to the presence of surface traps. Trap-assisted tunneling current along with the FNT current can explain forward leakage characteristics of the pGaN HEMTs. Our TCAD simulations were matched with the experimental data for five devices from four different research groups to support this claim. Using TCAD simulations, we have been able to analyze several device parameters including the various potential drops inside the gate stack structure. We were able to identify some of the trap levels and compare them to the dominant defects expected to be present in the pGaN cap layer. Furthermore, we studied the effects of different device parameters on the gate leakage process in the pGaN HEMT.","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":"3 1","pages":""},"PeriodicalIF":1.9,"publicationDate":"2024-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141500913","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Facile synthesis and characterization of PbS thin films doped with various aluminum concentrations for photovoltaic applications 用于光伏应用的掺杂不同浓度铝的 PbS 薄膜的简便合成与表征

IF 1.9 4区工程技术

Semiconductor Science and Technology Pub Date : 2024-06-12 DOI: 10.1088/1361-6641/ad5467

T Srinivasa Reddy, S Vijaya Krishna, A Vinaya Kumar, M Ramanjaneyulu, N Raja Sekhar and M C Santhosh Kumar

{"title":"Facile synthesis and characterization of PbS thin films doped with various aluminum concentrations for photovoltaic applications","authors":"T Srinivasa Reddy, S Vijaya Krishna, A Vinaya Kumar, M Ramanjaneyulu, N Raja Sekhar and M C Santhosh Kumar","doi":"10.1088/1361-6641/ad5467","DOIUrl":"https://doi.org/10.1088/1361-6641/ad5467","url":null,"abstract":"In this study, aluminum doped lead sulfide (PbS:Al) thin films were deposited on soda lime glass substrates using chemical bath deposition (CBD) technique. The structural, morphological, optical and electrical properties of as-deposited PbS thin films were studied as a function of Al concentration (0, 2, 4, 6, 8 at. %). The deposited films can be analyzed using scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), x-ray diffraction (XRD), UV-Vis-NIR spectroscopy and Hall measurement. From SEM, it was evident that the thickness of the films decreased from 750 nm (0 at. %) to 280 nm (8 at. %) with increased Al concentration. XRD analysis revealed that the prepared films exhibited face centered cubic structure without any other binary phases. The average crystallite size of the films decreased from 33.71 to 20.45 nm. The direct optical band gap values were increased from 0.90 to 1.29 eV. The optical parameters such as refractive index (n), extinction coefficient (k), real (ɛ1) and imaginary (ɛ2) parts of the dielectric constant were 1.51–2.04, 0.0035–0.0075, 2.50–6.20 and 0.005–0.16 respectively. The absorption coefficient (α) of all the deposited films was in the range of ≈105 cm−1. The electrical resistivity of the deposited films was found in the range of 102–103 Ω·cm. The overall analysis indicate that the deposited PbS:Al thin film shows promise as an absorbing layer for heterojunction solar cell devices.","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":"19 1","pages":""},"PeriodicalIF":1.9,"publicationDate":"2024-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141530939","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of gas pre-decomposition device on the growth of GaN epitaxial layer 气体预分解装置对 GaN 外延层生长的影响

IF 1.9 4区工程技术

Semiconductor Science and Technology Pub Date : 2024-05-28 DOI: 10.1088/1361-6641/ad4d5b

Yazhou Li, Weizhen Yao, Zhanhong Ma, Shaoyan Yang, Xianglin Liu, Chengming Li and Zhanguo Wang

{"title":"Effect of gas pre-decomposition device on the growth of GaN epitaxial layer","authors":"Yazhou Li, Weizhen Yao, Zhanhong Ma, Shaoyan Yang, Xianglin Liu, Chengming Li and Zhanguo Wang","doi":"10.1088/1361-6641/ad4d5b","DOIUrl":"https://doi.org/10.1088/1361-6641/ad4d5b","url":null,"abstract":"In previous studies, the influence of gas phase and surface reactions on the growth of GaN was mainly calculated through simulations. In this study, a novel gas pre-decomposition device (GPDD) was designed to experimentally investigate the effects of gas phase and surface reactions on GaN growth by changing the length and height of the isolation plates (IPs). By varying the structure of the GPDD, the effects on the growth rate and thickness uniformity of the GaN films were studied. The growth rate of the GaN sample slowed with the extension of the IPs because the longer partition plates led to insufficient gas mixing and premature consumption of the precursor trimethylgallium (TMG). The use of GPDD simultaneously achieves high crystal quality and smooth surface morphology of the GaN film. Owing to the use of GPDD, the decomposition of TMG in the pyrolysis pathway was promoted, which suppressed Ga vacancies and C impurities, resulting in weak yellow luminescence bands in the photoluminescence. This study provides a comprehensive understanding of the chemical reaction mechanism of GaN and plays an important role in promoting the development of metal-organic chemical vapor deposition equipment.","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":"29 1","pages":""},"PeriodicalIF":1.9,"publicationDate":"2024-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141167497","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Fabrication of Al doped α-GaOOH nanorod arrays on FTO for self-powered photoelectrochemical solar-blind UV photodetectors 在 FTO 上制作掺铝 α-GaOOH 纳米棒阵列，用于自供电光电化学日光盲紫外光检测器

IF 1.9 4区工程技术

Semiconductor Science and Technology Pub Date : 2024-05-14 DOI: 10.1088/1361-6641/ad4738

Zhi-Yuan Zheng and Ming-Ming Fan

{"title":"Fabrication of Al doped α-GaOOH nanorod arrays on FTO for self-powered photoelectrochemical solar-blind UV photodetectors","authors":"Zhi-Yuan Zheng and Ming-Ming Fan","doi":"10.1088/1361-6641/ad4738","DOIUrl":"https://doi.org/10.1088/1361-6641/ad4738","url":null,"abstract":"Al doped α-GaOOH nanorod arrays were grown on FTO via hydrothermal processes by using gallium nitrate and aluminum nitrate mixed aqueous solutions with fixed 1:1 mole ratio as precursors. With increasing the gallium nitrate precursor concentrations, the Ga/Al atom ratios in nanorod arrays increase from 0.36 to 2.08, and the length becomes much longer from 650 nm to 1.04 μm. According to the binding energy difference between Ga 2p3/2 core level and its background in x-ray photoelectron spectroscopy, the bandgap is estimated to be around 5.3 ± 0.2 eV. Al doped α-GaOOH nanorod array/FTO photoelectrochemical photodetectors show enhanced self-powered solar-blind UV photodetection properties, with the decrease of Ga precursor concentrations. The maximum responsivity at 255 nm is 0.09 mA W−1, and the fastest response time can reach 0.05 s. The improved photoresponse speed is ascribed from much shorter transportation route, accelerated carrier recombination by recombination centers, and smaller charge transfer resistance at the α-GaOOH/electrolyte interface with decreasing the gallium nitrate precursor concentrations. The stability and responsivity should be further improved. Nevertheless, this work firstly demonstrates the realization of self-powered solar-blind UV photodetection for α-GaOOH nanorod arrays on FTO via Al doping.","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":"7 1","pages":""},"PeriodicalIF":1.9,"publicationDate":"2024-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140926181","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Biexcitons and quadrons in self-assembled quantum dots 自组装量子点中的双激子和四电子

IF 1.9 4区工程技术

Semiconductor Science and Technology Pub Date : 2024-04-24 DOI: 10.1088/1361-6641/ad3d7c

Nguyen Hong Quang, Nguyen Thi Kim Thanh and Nguyen Que Huong

引用次数: 0

Enhancing external quantum efficiency of deep ultraviolet micro-leds through geometry design and multi-physics field coupling analysis 通过几何设计和多物理场耦合分析提高深紫外微型 LED 的外部量子效率

IF 1.9 4区工程技术

Semiconductor Science and Technology Pub Date : 2024-04-15 DOI: 10.1088/1361-6641/ad3a93

Yujie Gao, Xun Hu, Lingli Zhu, Na Gao, Rui Zhou, Yaping Wu, Kai Huang, Shuping Li, Junyong Kang, Rong Zhang

{"title":"Enhancing external quantum efficiency of deep ultraviolet micro-leds through geometry design and multi-physics field coupling analysis","authors":"Yujie Gao, Xun Hu, Lingli Zhu, Na Gao, Rui Zhou, Yaping Wu, Kai Huang, Shuping Li, Junyong Kang, Rong Zhang","doi":"10.1088/1361-6641/ad3a93","DOIUrl":"https://doi.org/10.1088/1361-6641/ad3a93","url":null,"abstract":"High-efficiency deep-ultraviolet (DUV) micro light-emitting diodes (LEDs) are explored for inspiring development in numerous fields, such as non-line-of-sight solar-blind communication, optical pumping, and maskless lithography. In this study, we performed FDTD and SimuLED calculations to investigate the optimized DUV micro-LED structure geometry for high light extraction efficiency (LEE) by designing different mesa structures, including square, hexagonal, and circular geometries of micro-LEDs emitted at a wavelength of 275 nm. The results showed that a circular mesa of 5 <italic toggle=\"yes\">μ</italic>m diameter achieved a LEE of 27% from the bottom and sidewall emissions of as-prepared DUV micro-LED. And both the near- and far-field transverse magnetic polarized light intensities were enhanced by a factor of 1.5 over the square and hexagonal mesas. Meanwhile, the transverse electric (TE) polarized light of the circular mesa structure was enhanced and concentrated along the normal direction. Moreover, the internal quantum efficiency (IQE) of circular mesas with varied sizes was comprehensively investigated in the interactions of the thermal and electric fields. An AlGaN-based DUV micro-LED with a diameter of 5 <italic toggle=\"yes\">μ</italic>m was found to obtain the highest IQE owing to a high current-density distribution and its self-heating properties, thereby achieving a sufficiently high external quantum efficiency of 26.75%. This study provides a comprehensive technical report, including electrical, thermal, and optical analyses, and a new perspective for developing high-efficiency, high-performance DUV micro-LEDs in practical applications.","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":"22 1","pages":""},"PeriodicalIF":1.9,"publicationDate":"2024-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140608869","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0