Enhancing external quantum efficiency of deep ultraviolet micro-leds through geometry design and multi-physics field coupling analysis

IF 2.1 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Semiconductor Science and Technology Pub Date : 2024-04-15 DOI:10.1088/1361-6641/ad3a93

Yujie Gao, Xun Hu, Lingli Zhu, Na Gao, Rui Zhou, Yaping Wu, Kai Huang, Shuping Li, Junyong Kang, Rong Zhang

{"title":"Enhancing external quantum efficiency of deep ultraviolet micro-leds through geometry design and multi-physics field coupling analysis","authors":"Yujie Gao, Xun Hu, Lingli Zhu, Na Gao, Rui Zhou, Yaping Wu, Kai Huang, Shuping Li, Junyong Kang, Rong Zhang","doi":"10.1088/1361-6641/ad3a93","DOIUrl":null,"url":null,"abstract":"High-efficiency deep-ultraviolet (DUV) micro light-emitting diodes (LEDs) are explored for inspiring development in numerous fields, such as non-line-of-sight solar-blind communication, optical pumping, and maskless lithography. In this study, we performed FDTD and SimuLED calculations to investigate the optimized DUV micro-LED structure geometry for high light extraction efficiency (LEE) by designing different mesa structures, including square, hexagonal, and circular geometries of micro-LEDs emitted at a wavelength of 275 nm. The results showed that a circular mesa of 5 <italic toggle=\"yes\">μ</italic>m diameter achieved a LEE of 27% from the bottom and sidewall emissions of as-prepared DUV micro-LED. And both the near- and far-field transverse magnetic polarized light intensities were enhanced by a factor of 1.5 over the square and hexagonal mesas. Meanwhile, the transverse electric (TE) polarized light of the circular mesa structure was enhanced and concentrated along the normal direction. Moreover, the internal quantum efficiency (IQE) of circular mesas with varied sizes was comprehensively investigated in the interactions of the thermal and electric fields. An AlGaN-based DUV micro-LED with a diameter of 5 <italic toggle=\"yes\">μ</italic>m was found to obtain the highest IQE owing to a high current-density distribution and its self-heating properties, thereby achieving a sufficiently high external quantum efficiency of 26.75%. This study provides a comprehensive technical report, including electrical, thermal, and optical analyses, and a new perspective for developing high-efficiency, high-performance DUV micro-LEDs in practical applications.","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":"22 1","pages":""},"PeriodicalIF":2.1000,"publicationDate":"2024-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconductor Science and Technology","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1088/1361-6641/ad3a93","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

High-efficiency deep-ultraviolet (DUV) micro light-emitting diodes (LEDs) are explored for inspiring development in numerous fields, such as non-line-of-sight solar-blind communication, optical pumping, and maskless lithography. In this study, we performed FDTD and SimuLED calculations to investigate the optimized DUV micro-LED structure geometry for high light extraction efficiency (LEE) by designing different mesa structures, including square, hexagonal, and circular geometries of micro-LEDs emitted at a wavelength of 275 nm. The results showed that a circular mesa of 5 μm diameter achieved a LEE of 27% from the bottom and sidewall emissions of as-prepared DUV micro-LED. And both the near- and far-field transverse magnetic polarized light intensities were enhanced by a factor of 1.5 over the square and hexagonal mesas. Meanwhile, the transverse electric (TE) polarized light of the circular mesa structure was enhanced and concentrated along the normal direction. Moreover, the internal quantum efficiency (IQE) of circular mesas with varied sizes was comprehensively investigated in the interactions of the thermal and electric fields. An AlGaN-based DUV micro-LED with a diameter of 5 μm was found to obtain the highest IQE owing to a high current-density distribution and its self-heating properties, thereby achieving a sufficiently high external quantum efficiency of 26.75%. This study provides a comprehensive technical report, including electrical, thermal, and optical analyses, and a new perspective for developing high-efficiency, high-performance DUV micro-LEDs in practical applications.

查看原文本刊更多论文

通过几何设计和多物理场耦合分析提高深紫外微型 LED 的外部量子效率

高效深紫外（DUV）微型发光二极管（LED）在许多领域都得到了令人鼓舞的发展，例如非视线太阳盲通信、光泵浦和无掩模光刻。在这项研究中，我们进行了 FDTD 和 SimuLED 计算，通过设计不同的网格结构（包括在 275 nm 波长处发射的微型 LED 的正方形、六边形和圆形几何结构）来研究优化的 DUV 微型 LED 结构几何形状，以实现高光萃取效率（LEE）。结果表明，直径为 5 μm 的圆形网格从制备好的 DUV 微型 LED 的底部和侧壁发射的萃取效率达到了 27%。近场和远场横向磁偏振光强度都比正方形和六边形网格增强了 1.5 倍。同时，圆形网格结构的横向电（TE）偏振光沿法线方向增强并集中。此外，在热场和电场的相互作用下，还全面研究了不同尺寸圆网格的内部量子效率（IQE）。研究发现，直径为 5 μm 的 AlGaN 基 DUV 微型 LED 因其高电流密度分布和自加热特性而获得了最高的 IQE，从而实现了 26.75% 的足够高的外部量子效率。这项研究提供了一份全面的技术报告，包括电学、热学和光学分析，为在实际应用中开发高效率、高性能的紫外微型 LED 提供了新的视角。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Semiconductor Science and Technology 工程技术-材料科学：综合

CiteScore

4.30

自引率

5.30%

发文量

216

审稿时长

2.4 months

期刊介绍： Devoted to semiconductor research, Semiconductor Science and Technology''s multidisciplinary approach reflects the far-reaching nature of this topic. The scope of the journal covers fundamental and applied experimental and theoretical studies of the properties of non-organic, organic and oxide semiconductors, their interfaces and devices, including: fundamental properties materials and nanostructures devices and applications fabrication and processing new analytical techniques simulation emerging fields: materials and devices for quantum technologies hybrid structures and devices 2D and topological materials metamaterials semiconductors for energy flexible electronics.