Study on a p-GaN HEMT with composite passivation and composite barrier layers

IF 16.4 1区化学 Q1 CHEMISTRY, MULTIDISCIPLINARY

Accounts of Chemical Research Pub Date : 2024-07-03 DOI:10.1088/1361-6641/ad5b80

Junji Cheng, Queyang Wang, Yikai Liu, Guo Ding, Minming Zhang, Bo Yi, Haimeng Huang and Hongqiang Yang

{"title":"Study on a p-GaN HEMT with composite passivation and composite barrier layers","authors":"Junji Cheng, Queyang Wang, Yikai Liu, Guo Ding, Minming Zhang, Bo Yi, Haimeng Huang and Hongqiang Yang","doi":"10.1088/1361-6641/ad5b80","DOIUrl":null,"url":null,"abstract":"A novel structure of p-GaN high-electron-mobility transistor (HEMT) is proposed and studied. It features two composite layers. One is the composite passivation (CP) layer consisting of Si3N4 and high-permittivity (HK) film. The other is a composite barrier (CB) layer consisting of AlxGa1−xN/AlN/Al0.23Ga0.77N. Due to the coordinated effect of CP and CB, the specific on-resistance (RON, SP) can be reduced under the premise of ensuring breakdown voltage (BV). Meanwhile, since the HK film in CP introduces a mechanism to automatically compensate the hot electrons trapped by surface states, the current collapse effect could be suppressed. According to the simulation results, in comparison with the conventional p-GaN HEMT, the proposed one using TiO2 as the HK material and using Al-component of 0.35 for AlxGa1−xN gains a 29.5% reduction in RON, SP while getting a 9.8% increase in BV, which contributes to a 50.5% decrease in the energy loss during one cycle at 200 kHz. It is also demonstrated by the simulation results that the current collapse in the proposed device is reduced by 28.6%. Thereby, a promising p-GaN HEMT with improved performance and reliability is invented.","PeriodicalId":1,"journal":{"name":"Accounts of Chemical Research","volume":null,"pages":null},"PeriodicalIF":16.4000,"publicationDate":"2024-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Accounts of Chemical Research","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1088/1361-6641/ad5b80","RegionNum":1,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}

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Abstract

A novel structure of p-GaN high-electron-mobility transistor (HEMT) is proposed and studied. It features two composite layers. One is the composite passivation (CP) layer consisting of Si3N4 and high-permittivity (HK) film. The other is a composite barrier (CB) layer consisting of AlxGa1−xN/AlN/Al0.23Ga0.77N. Due to the coordinated effect of CP and CB, the specific on-resistance (RON, SP) can be reduced under the premise of ensuring breakdown voltage (BV). Meanwhile, since the HK film in CP introduces a mechanism to automatically compensate the hot electrons trapped by surface states, the current collapse effect could be suppressed. According to the simulation results, in comparison with the conventional p-GaN HEMT, the proposed one using TiO2 as the HK material and using Al-component of 0.35 for AlxGa1−xN gains a 29.5% reduction in RON, SP while getting a 9.8% increase in BV, which contributes to a 50.5% decrease in the energy loss during one cycle at 200 kHz. It is also demonstrated by the simulation results that the current collapse in the proposed device is reduced by 28.6%. Thereby, a promising p-GaN HEMT with improved performance and reliability is invented.

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具有复合钝化层和复合阻挡层的 p-GaN HEMT 研究

本文提出并研究了一种新型 p-GaN 高电子迁移率晶体管（HEMT）结构。它具有两个复合层。一个是由 Si3N4 和高导率（HK）薄膜组成的复合钝化（CP）层。另一层是由 AlxGa1-xN/AlN/Al0.23Ga0.77N 组成的复合阻挡层（CB）。由于 CP 和 CB 的协调作用，在保证击穿电压（BV）的前提下，可以降低比导通电阻（RON，SP）。同时，由于 CP 中的 HK 膜引入了自动补偿表面态捕获的热电子的机制，因此可以抑制电流塌缩效应。根据仿真结果，与传统的 p-GaN HEMT 相比，使用 TiO2 作为 HK 材料并在 AlxGa1-xN 中使用 0.35 Al 成分的拟议 HEMT 在 RON、SP 方面降低了 29.5%，而在 BV 方面提高了 9.8%，这使得在 200 kHz 的一个周期内能量损失降低了 50.5%。仿真结果还表明，该器件的电流塌缩降低了 28.6%。因此，我们发明了一种性能更好、可靠性更高的 p-GaN HEMT。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Accounts of Chemical Research 化学-化学综合

CiteScore

31.40

自引率

1.10%

发文量

312

审稿时长

2 months

期刊介绍： Accounts of Chemical Research presents short, concise and critical articles offering easy-to-read overviews of basic research and applications in all areas of chemistry and biochemistry. These short reviews focus on research from the author’s own laboratory and are designed to teach the reader about a research project. In addition, Accounts of Chemical Research publishes commentaries that give an informed opinion on a current research problem. Special Issues online are devoted to a single topic of unusual activity and significance. Accounts of Chemical Research replaces the traditional article abstract with an article "Conspectus." These entries synopsize the research affording the reader a closer look at the content and significance of an article. Through this provision of a more detailed description of the article contents, the Conspectus enhances the article's discoverability by search engines and the exposure for the research.