自组装量子点中的双激子和四电子

IF 1.9 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Nguyen Hong Quang, Nguyen Thi Kim Thanh and Nguyen Que Huong
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引用次数: 0

摘要

我们从理论上研究了抛物线约束量子点中的双激子和四激子,并对这两种激子进行了全面比较。通过使用无限制哈特里-福克方法计算正四子和双激子结合能作为电子-空穴约束势和质量比的函数,我们发现了双激子和正四子之间的本质区别。负束缚能和正束缚能之间的交叉点被标出。还研究了外部磁场对正四子和双电子结合能的影响。此外,还发现在一定的电子-空穴振荡器长度比范围内,激发的正四子和双激子态的反结合和结合之间存在交叉。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Biexcitons and quadrons in self-assembled quantum dots
We theoretically study biexcitons and quadrons in quantum dots with parabolic confinement and give a complete comparison between the two excitations. The calculation of quadron and biexciton binding energies as functions of electron-to-hole confinement potentials and mass ratios, using the unrestricted Hartree–Fock method, shows the essential differences between biexcitons and quadrons. The crossover between the negative and positive binding energies is indicated. The effect of an external magnetic field on the quadron and biexciton binding energies has also been investigated. In addition, the crossover between anti-binding and binding of both excited quadron and biexciton states in a certain range of the electron-to-hole oscillator length ratios has been found.
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来源期刊
Semiconductor Science and Technology
Semiconductor Science and Technology 工程技术-材料科学:综合
CiteScore
4.30
自引率
5.30%
发文量
216
审稿时长
2.4 months
期刊介绍: Devoted to semiconductor research, Semiconductor Science and Technology''s multidisciplinary approach reflects the far-reaching nature of this topic. The scope of the journal covers fundamental and applied experimental and theoretical studies of the properties of non-organic, organic and oxide semiconductors, their interfaces and devices, including: fundamental properties materials and nanostructures devices and applications fabrication and processing new analytical techniques simulation emerging fields: materials and devices for quantum technologies hybrid structures and devices 2D and topological materials metamaterials semiconductors for energy flexible electronics.
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