Russian Microelectronics最新文献

Thermal Modeling and Layout Optimization of GaN Half-Bridge IC with Integrated Drivers and Power HEMTs 集成驱动器和功率 HEMT 的氮化镓半桥集成电路的热建模和布局优化

Russian Microelectronics Pub Date : 2024-07-26 DOI: 10.1134/s1063739724600225

V. A. Kagadey, I. Y. Kodorova, E. S. Polyntsev

{"title":"Thermal Modeling and Layout Optimization of GaN Half-Bridge IC with Integrated Drivers and Power HEMTs","authors":"V. A. Kagadey, I. Y. Kodorova, E. S. Polyntsev","doi":"10.1134/s1063739724600225","DOIUrl":"https://doi.org/10.1134/s1063739724600225","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3>The paper presents the results of thermal modeling of a half-bridge monolithic integrated circuit (IC) with integrated drivers and enhanced mode power high electron mobility transistors, based on a GaN-on-SOI heterostructure. It had been established that the main heat sources in the IC were the half-bridge GaN HEMTs. The heat from the half-bridge GaN HEMTs propagates in the chip and leads to heating of the logic block and gate drivers. Heating of half-bridge GaN HEMTs leads to increased channel resistance and IC output current drop. Heating of the gate drivers reduces driving current, as a result, increases the switching time of the half-bridge GaN HEMTs. Heating of the logic block increases the rise and fall times of the generated control signals, which worsens the dynamic characteristics of the IC. A comparative analysis of heat propagation for IC dies based on GaN-on-SOI and GaN-on-Si heterostructures showed that GaN-on-SOI structure has a 40% greater junction-to-backside thermal resistivity compared to GaN-on-Si structure. In this case, the specific thermal resistance in the direction of heat propagation from the hotspot of the transistor to the backside of the die for the GaN-on-SOI structure is almost two orders of magnitude greater than in the direction of its propagation to the frontside of the chip. The results obtained were used for IC layout optimization. The rearrangement of GaN-on-SOI IC functional blocks, as well as to introduction of additional heat-spreading elements on the frontside of chip were carried out during the optimization.","PeriodicalId":21534,"journal":{"name":"Russian Microelectronics","volume":"69 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141777991","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Design a Configurable First Order Universal Filter Using a Single EX-CCCII 使用单个 EX-CCCII 设计可配置的一阶通用滤波器

Russian Microelectronics Pub Date : 2024-07-26 DOI: 10.1134/s1063739724600080

Deepak Agrawal, Shailendra K. Tripathi, N Soma Sekhar Reddy, M. Sai Vineeth Reddy, P. Mohammad Shoaib

引用次数: 0

Influence of Laser Radiation on Functional Properties MOS Device Structures 激光辐射对 MOS 器件结构功能特性的影响

Russian Microelectronics Pub Date : 2024-07-26 DOI: 10.1134/s1063739724600262

S. Sh. Rekhviashvili, D. S. Gaev

引用次数: 0

Analysis of Carrier Scattering Mechanisms in AlN/GaN HEMT Heterostructures with an Ultrathin AlN Barrier 带有超薄氮化铝势垒的氮化铝/氮化镓 HEMT 异质结构中的载流子散射机制分析

Russian Microelectronics Pub Date : 2024-07-26 DOI: 10.1134/s1063739724600304

A. S. Gusev, A. O. Sultanov, A. V. Katkov, S. M. Ryndya, N. V. Siglovaya, A. N. Klochkov, R. V. Ryzhuk, N. I. Kargin, D. P. Borisenko

引用次数: 0

How Memristor Device Records Memory Signal: Electromagnetic Study through an Equivalent Setup Memristor 器件如何记录记忆信号：通过等效设置进行电磁研究

Russian Microelectronics Pub Date : 2024-07-26 DOI: 10.1134/s1063739724600043

Hassan Ali

{"title":"How Memristor Device Records Memory Signal: Electromagnetic Study through an Equivalent Setup","authors":"Hassan Ali","doi":"10.1134/s1063739724600043","DOIUrl":"https://doi.org/10.1134/s1063739724600043","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3>Memristor is an electronic device, which corresponds to a switch translating memory data (synapse) into resistance values. Scientists made a switch with a combination of titanium dioxide (Tio2) and oxygen deficient TiO2 to create a metal-insulator transition mechanism to make a device with nonlinear conductive states Ron and Roff. This work presents the memory storing capability of memristor by utilizing an equivalent experimental setup of steel balls array. An experiment exhibits an identical memristive mechanism of memristor device where the nonlinear conductive states along an array of steel balls describes an exact mechanism of memristor’s functionality. Via utilizing an identical setup, we depict electric and magnetic field compatibility at memristor’s pinched (on & off) regions. It shows that how memristor stores synaptic information by means of resistance values at its pinched (on & off) conducting regions. The aim of this effort is to provide technical support to conceive a memristor as a resistive memory storage device, which changes its resistance values with respect to applied voltage (multiple synaptic weights).","PeriodicalId":21534,"journal":{"name":"Russian Microelectronics","volume":"57 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141785557","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Simulation of Silicon Field-Effect Conical GAA Nanotransistors with a Stacked SiO2/HfO2 Subgate Dielectric 带有叠层 SiO2/HfO2 亚门电介质的硅场效应锥形 GAA 纳米晶体管仿真

Russian Microelectronics Pub Date : 2024-07-26 DOI: 10.1134/s1063739724600274

N. V. Masal’skii

引用次数: 0

Structure and Formation of Superflash Nonvolatile Memory Cells 超级闪存非易失性存储器单元的结构与形成

Russian Microelectronics Pub Date : 2024-07-26 DOI: 10.1134/s1063739724600249

D. A. Abdullaev, E. V. Bobrova, R. A. Milovanov

引用次数: 0

A Comprehensive Study of Nonuniformity Properties of the LiCoO2 Thin-Film Cathode Fabricated by RF Sputtering 射频溅射法制造的钴酸锂薄膜阴极的非均匀性综合研究

Russian Microelectronics Pub Date : 2024-07-26 DOI: 10.1134/s1063739724600250

S. V. Kurbatov, A. S. Rudy, V. V. Naumov, A. A. Mironenko, O. V. Savenko, M. A. Smirnova, L. A. Mazaletsky, D. E. Pukhov

引用次数: 0

Kinetics of Electromigration Mass Transfer in the Interface Elements of Micro- and Nanoelectronics Depending on the Strength of Thin-Film Connections 取决于薄膜连接强度的微电子和纳米电子学界面元件中的电迁移传质动力学

Russian Microelectronics Pub Date : 2024-07-26 DOI: 10.1134/s1063739724600286

T. M. Makhviladze, M. E. Sarychev

{"title":"Kinetics of Electromigration Mass Transfer in the Interface Elements of Micro- and Nanoelectronics Depending on the Strength of Thin-Film Connections","authors":"T. M. Makhviladze, M. E. Sarychev","doi":"10.1134/s1063739724600286","DOIUrl":"https://doi.org/10.1134/s1063739724600286","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3>This study improves and expands the scope of application of the theoretical model previously proposed by the authors, which describes the relationship between the strength and electromigration (diffusion) properties of interfaces formed by connected materials. In the developed model, a linear relationship is established between the values of the work of reversible interface separation ({{W}_{a}}) and electromigration activation energy ({{H}_{{EM}}}) in the interface. Estimates are made and the coefficients of the resulting relation are compared with experiments studying electromigration in a copper conductor coated with a protective dielectric. Using also the model previously developed by the authors, which describes the dependence of the quantity ({{W}_{a}}) on the concentrations of nonequilibrium lattice defects presenting in the volumes of connected materials, a number of effects due to the influence of such defects on processes caused by electromigration are predicted and studied. This study shows that by introducing nonequilibrium lattice defects in the form of atomic interstitial or substitutional impurities into the volumes of the joined materials, we can effectively influence on the characteristics of the electromigration instability of the shape of the interlayer boundary. For interstitial impurities, quantitative analytical estimates of the impurity concentration required to significantly change (both increase and decrease) the characteristic growth time of the instability of the shape of an initially flat interface are performed.","PeriodicalId":21534,"journal":{"name":"Russian Microelectronics","volume":"26 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141777989","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Development of a Ge-MISFET Instrument Structure with an Induced p-Type Channel 开发具有诱导 p 型沟道的 Ge-MISFET 仪器结构

Russian Microelectronics Pub Date : 2024-07-26 DOI: 10.1134/s1063739724600298

N. A. Alyabina, E. A. Arkhipova, Yu. N. Buzynin, S. A. Denisov, A. V. Zdoroveishchev, A. M. Titova, V. Yu. Chalkov, V. G. Shengurov

引用次数: 0