使用单个 EX-CCCII 设计可配置的一阶通用滤波器

Q4 Engineering
Deepak Agrawal, Shailendra K. Tripathi, N Soma Sekhar Reddy, M. Sai Vineeth Reddy, P. Mohammad Shoaib
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引用次数: 0

摘要

摘要 在这项研究中,我们利用带有接地电容器的单个有源元件(Extra-X 电流控制传送带)设计了一种可重新配置的一阶通用滤波器(CFUF)。通过简单地交换数字控制字(k1k2),所建议的电路可以实现所有常见的滤波器响应,包括高通、低通和全通。EX-CCCII 作为滤波器设置中的有源元件,基于新颖的拓扑结构,具有降低复杂性、低功耗和提高性能等优点。该电路具有以下优点:电压输入信号的输入阻抗高;极点频率可随偏置电流变化而进行电子控制;只需一个接地电容器即可集成到集成电路中。在 ±0.5 V 的电源电平下,建议的电路采用 0.18 微米 CMOS 技术规格建模。PSPICE 仿真工具用于演示滤波器的性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Design a Configurable First Order Universal Filter Using a Single EX-CCCII

Design a Configurable First Order Universal Filter Using a Single EX-CCCII

Abstract

In this work, a single active element (Extra-X Current Controlled Conveyor) with grounded capacitor is used to design a reconfigurable first-order universal filter (CFUF). By simply swapping the digital control words (k1k2), the suggested circuit may implement all of the common filter responses, including high-pass, low-pass, and all-pass. An EX-CCCII serves as the active element in the filter setup, which is based on a novel topology, which provides several advantages, such as reduced complexity, low power consumption, and improved performance. The following advantages of the proposed circuit: high input impedance for voltage input signals, electronically controllable pole frequency that varies with bias current, and a single grounded capacitor that can be integrated into an IC. At a power supply level of ±0.5 V, the proposed circuit is modeled using specifications for 0.18-micrometer CMOS technology. PSPICE simulation tool is used to demonstrate the filter’s performance.

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来源期刊
Russian Microelectronics
Russian Microelectronics Materials Science-Materials Chemistry
CiteScore
0.70
自引率
0.00%
发文量
43
期刊介绍: Russian Microelectronics  covers physical, technological, and some VLSI and ULSI circuit-technical aspects of microelectronics and nanoelectronics; it informs the reader of new trends in submicron optical, x-ray, electron, and ion-beam lithography technology; dry processing techniques, etching, doping; and deposition and planarization technology. Significant space is devoted to problems arising in the application of proton, electron, and ion beams, plasma, etc. Consideration is given to new equipment, including cluster tools and control in situ and submicron CMOS, bipolar, and BICMOS technologies. The journal publishes papers addressing problems of molecular beam epitaxy and related processes; heterojunction devices and integrated circuits; the technology and devices of nanoelectronics; and the fabrication of nanometer scale devices, including new device structures, quantum-effect devices, and superconducting devices. The reader will find papers containing news of the diagnostics of surfaces and microelectronic structures, the modeling of technological processes and devices in micro- and nanoelectronics, including nanotransistors, and solid state qubits.
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