Russian Microelectronics covers physical, technological, and some VLSI and ULSI circuit-technical aspects of microelectronics and nanoelectronics; it informs the reader of new trends in submicron optical, x-ray, electron, and ion-beam lithography technology; dry processing techniques, etching, doping; and deposition and planarization technology. Significant space is devoted to problems arising in the application of proton, electron, and ion beams, plasma, etc. Consideration is given to new equipment, including cluster tools and control in situ and submicron CMOS, bipolar, and BICMOS technologies. The journal publishes papers addressing problems of molecular beam epitaxy and related processes; heterojunction devices and integrated circuits; the technology and devices of nanoelectronics; and the fabrication of nanometer scale devices, including new device structures, quantum-effect devices, and superconducting devices. The reader will find papers containing news of the diagnostics of surfaces and microelectronic structures, the modeling of technological processes and devices in micro- and nanoelectronics, including nanotransistors, and solid state qubits.
CiteScore:
CiteScore
SJR
SNIP
CiteScore排名
0.7
0.182
0.388
学科
排名
百分位
大类:Engineering 小类:Electrical and Electronic Engineering
689 / 797
13%
大类:Materials Science 小类:Materials Chemistry
275 / 317
13%
大类:Materials Science 小类:Electronic, Optical and Magnetic Materials
262 / 284
7%
大类:Physics and Astronomy 小类:Condensed Matter Physics
Pub Date : 2024-07-26DOI: 10.1134/s1063739724600080Deepak Agrawal, Shailendra K. Tripathi, N Soma Sekhar Reddy, M. Sai Vineeth Reddy, P. Mohammad Shoaib