{"title":"Influence of Laser Radiation on Functional Properties MOS Device Structures","authors":"S. Sh. Rekhviashvili, D. S. Gaev","doi":"10.1134/s1063739724600262","DOIUrl":null,"url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The electrical and physical properties of MOS device structures (capacitor, field-effect transistor with an insulated gate and induced channel, CMOS integrated circuit) when exposed to unmodulated laser radiation are studied. The static and dynamic characteristics are measured. The theoretical study is carried out using the developed SPICE models and numerical experiments. An expression is obtained for the volt-ampere characteristics (VACs) of a field-effect transistor operating in a mode with constant optical illumination. It is shown that the characteristics of structures are determined by the generation and recombination of nonequilibrium charge carriers, the field effect, and the photovoltaic effect in <i>p–n</i>-junctions, the Dember effect, and the tunneling of charge carriers through the gate dielectric. The results of the study are of interest in terms of creating high-speed transistors and integrated circuits of a new type.</p>","PeriodicalId":21534,"journal":{"name":"Russian Microelectronics","volume":"376 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-07-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Russian Microelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1134/s1063739724600262","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"Engineering","Score":null,"Total":0}
引用次数: 0
Abstract
The electrical and physical properties of MOS device structures (capacitor, field-effect transistor with an insulated gate and induced channel, CMOS integrated circuit) when exposed to unmodulated laser radiation are studied. The static and dynamic characteristics are measured. The theoretical study is carried out using the developed SPICE models and numerical experiments. An expression is obtained for the volt-ampere characteristics (VACs) of a field-effect transistor operating in a mode with constant optical illumination. It is shown that the characteristics of structures are determined by the generation and recombination of nonequilibrium charge carriers, the field effect, and the photovoltaic effect in p–n-junctions, the Dember effect, and the tunneling of charge carriers through the gate dielectric. The results of the study are of interest in terms of creating high-speed transistors and integrated circuits of a new type.
期刊介绍：
Russian Microelectronics covers physical, technological, and some VLSI and ULSI circuit-technical aspects of microelectronics and nanoelectronics; it informs the reader of new trends in submicron optical, x-ray, electron, and ion-beam lithography technology; dry processing techniques, etching, doping; and deposition and planarization technology. Significant space is devoted to problems arising in the application of proton, electron, and ion beams, plasma, etc. Consideration is given to new equipment, including cluster tools and control in situ and submicron CMOS, bipolar, and BICMOS technologies. The journal publishes papers addressing problems of molecular beam epitaxy and related processes; heterojunction devices and integrated circuits; the technology and devices of nanoelectronics; and the fabrication of nanometer scale devices, including new device structures, quantum-effect devices, and superconducting devices. The reader will find papers containing news of the diagnostics of surfaces and microelectronic structures, the modeling of technological processes and devices in micro- and nanoelectronics, including nanotransistors, and solid state qubits.
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