Influence of Laser Radiation on Functional Properties MOS Device Structures

Abstract

The electrical and physical properties of MOS device structures (capacitor, field-effect transistor with an insulated gate and induced channel, CMOS integrated circuit) when exposed to unmodulated laser radiation are studied. The static and dynamic characteristics are measured. The theoretical study is carried out using the developed SPICE models and numerical experiments. An expression is obtained for the volt-ampere characteristics (VACs) of a field-effect transistor operating in a mode with constant optical illumination. It is shown that the characteristics of structures are determined by the generation and recombination of nonequilibrium charge carriers, the field effect, and the photovoltaic effect in p–n-junctions, the Dember effect, and the tunneling of charge carriers through the gate dielectric. The results of the study are of interest in terms of creating high-speed transistors and integrated circuits of a new type.