{"title":"Memristor 器件如何记录记忆信号：通过等效设置进行电磁研究","authors":"Hassan Ali","doi":"10.1134/s1063739724600043","DOIUrl":null,"url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Memristor is an electronic device, which corresponds to a switch translating memory data (synapse) into resistance values. Scientists made a switch with a combination of titanium dioxide (Tio<sub>2</sub>) and oxygen deficient TiO<sub>2</sub> to create a metal-insulator transition mechanism to make a device with nonlinear conductive states <i>R</i><sub>on</sub> and <i>R</i><sub>off</sub>. This work presents the memory storing capability of memristor by utilizing an equivalent experimental setup of steel balls array. An experiment exhibits an identical memristive mechanism of memristor device where the nonlinear conductive states along an array of steel balls describes an exact mechanism of memristor’s functionality. Via utilizing an identical setup, we depict electric and magnetic field compatibility at memristor’s <i>pinched</i> (<sub>on & off</sub>) regions. It shows that how memristor stores synaptic information by means of resistance values at its <i>pinched</i> (<sub>on & off</sub>) conducting regions. The aim of this effort is to provide technical support to conceive a memristor as a resistive memory storage device, which changes its resistance values with respect to applied voltage (multiple synaptic weights).</p>","PeriodicalId":21534,"journal":{"name":"Russian Microelectronics","volume":"57 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-07-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"How Memristor Device Records Memory Signal: Electromagnetic Study through an Equivalent Setup\",\"authors\":\"Hassan Ali\",\"doi\":\"10.1134/s1063739724600043\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<h3 data-test=\\\"abstract-sub-heading\\\">Abstract</h3><p>Memristor is an electronic device, which corresponds to a switch translating memory data (synapse) into resistance values. Scientists made a switch with a combination of titanium dioxide (Tio<sub>2</sub>) and oxygen deficient TiO<sub>2</sub> to create a metal-insulator transition mechanism to make a device with nonlinear conductive states <i>R</i><sub>on</sub> and <i>R</i><sub>off</sub>. This work presents the memory storing capability of memristor by utilizing an equivalent experimental setup of steel balls array. An experiment exhibits an identical memristive mechanism of memristor device where the nonlinear conductive states along an array of steel balls describes an exact mechanism of memristor’s functionality. Via utilizing an identical setup, we depict electric and magnetic field compatibility at memristor’s <i>pinched</i> (<sub>on & off</sub>) regions. It shows that how memristor stores synaptic information by means of resistance values at its <i>pinched</i> (<sub>on & off</sub>) conducting regions. The aim of this effort is to provide technical support to conceive a memristor as a resistive memory storage device, which changes its resistance values with respect to applied voltage (multiple synaptic weights).</p>\",\"PeriodicalId\":21534,\"journal\":{\"name\":\"Russian Microelectronics\",\"volume\":\"57 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-07-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Russian Microelectronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1134/s1063739724600043\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"Engineering\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Russian Microelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1134/s1063739724600043","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"Engineering","Score":null,"Total":0}
How Memristor Device Records Memory Signal: Electromagnetic Study through an Equivalent Setup
Abstract
Memristor is an electronic device, which corresponds to a switch translating memory data (synapse) into resistance values. Scientists made a switch with a combination of titanium dioxide (Tio2) and oxygen deficient TiO2 to create a metal-insulator transition mechanism to make a device with nonlinear conductive states Ron and Roff. This work presents the memory storing capability of memristor by utilizing an equivalent experimental setup of steel balls array. An experiment exhibits an identical memristive mechanism of memristor device where the nonlinear conductive states along an array of steel balls describes an exact mechanism of memristor’s functionality. Via utilizing an identical setup, we depict electric and magnetic field compatibility at memristor’s pinched (on & off) regions. It shows that how memristor stores synaptic information by means of resistance values at its pinched (on & off) conducting regions. The aim of this effort is to provide technical support to conceive a memristor as a resistive memory storage device, which changes its resistance values with respect to applied voltage (multiple synaptic weights).
期刊介绍：
Russian Microelectronics covers physical, technological, and some VLSI and ULSI circuit-technical aspects of microelectronics and nanoelectronics; it informs the reader of new trends in submicron optical, x-ray, electron, and ion-beam lithography technology; dry processing techniques, etching, doping; and deposition and planarization technology. Significant space is devoted to problems arising in the application of proton, electron, and ion beams, plasma, etc. Consideration is given to new equipment, including cluster tools and control in situ and submicron CMOS, bipolar, and BICMOS technologies. The journal publishes papers addressing problems of molecular beam epitaxy and related processes; heterojunction devices and integrated circuits; the technology and devices of nanoelectronics; and the fabrication of nanometer scale devices, including new device structures, quantum-effect devices, and superconducting devices. The reader will find papers containing news of the diagnostics of surfaces and microelectronic structures, the modeling of technological processes and devices in micro- and nanoelectronics, including nanotransistors, and solid state qubits.
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