Development of a Ge-MISFET Instrument Structure with an Induced p-Type Channel

Q4 Engineering

Russian Microelectronics Pub Date : 2024-07-26 DOI:10.1134/s1063739724600298

N. A. Alyabina, E. A. Arkhipova, Yu. N. Buzynin, S. A. Denisov, A. V. Zdoroveishchev, A. M. Titova, V. Yu. Chalkov, V. G. Shengurov

引用次数: 0

Abstract

The conditions for the growth of n-type Ge layers with the parameters required to create a Ge-MISFET with an induced p-type channel using the hot wire chemical vapor deposition (HW CVD) method are determined. The conditions for deposition using electron beam deposition and subsequent annealing of the subgate high-k dielectric ZrO₂:Y₂O₃ layers are optimized, allowing us to achieve a leakage current value of 5 × 10^–6 A/cm². For the developed device structure, some parameters of the Ge-MISFET are calculated, such as the channel length, maximum voltage between the sink and source, and breakdown voltage.

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开发具有诱导 p 型沟道的 Ge-MISFET 仪器结构

摘要确定了采用热线化学气相沉积（HW CVD）方法生长具有所需参数的 n 型 Ge 层的条件，以制造具有诱导 p 型沟道的 Ge-MISFET。优化了电子束沉积的沉积条件以及次栅极高介电质 ZrO2:Y2O3 层的退火条件，使我们的漏电流值达到 5 × 10-6 A/cm2。针对所开发的器件结构，我们计算了 Ge-MISFET 的一些参数，如沟道长度、沉源之间的最大电压和击穿电压。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Russian Microelectronics Materials Science-Materials Chemistry

CiteScore

0.70

自引率

0.00%

发文量

期刊介绍： Russian Microelectronics covers physical, technological, and some VLSI and ULSI circuit-technical aspects of microelectronics and nanoelectronics; it informs the reader of new trends in submicron optical, x-ray, electron, and ion-beam lithography technology; dry processing techniques, etching, doping; and deposition and planarization technology. Significant space is devoted to problems arising in the application of proton, electron, and ion beams, plasma, etc. Consideration is given to new equipment, including cluster tools and control in situ and submicron CMOS, bipolar, and BICMOS technologies. The journal publishes papers addressing problems of molecular beam epitaxy and related processes; heterojunction devices and integrated circuits; the technology and devices of nanoelectronics; and the fabrication of nanometer scale devices, including new device structures, quantum-effect devices, and superconducting devices. The reader will find papers containing news of the diagnostics of surfaces and microelectronic structures, the modeling of technological processes and devices in micro- and nanoelectronics, including nanotransistors, and solid state qubits.