{"title":"Kinetics of Electromigration Mass Transfer in the Interface Elements of Micro- and Nanoelectronics Depending on the Strength of Thin-Film Connections","authors":"T. M. Makhviladze, M. E. Sarychev","doi":"10.1134/s1063739724600286","DOIUrl":null,"url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>This study improves and expands the scope of application of the theoretical model previously proposed by the authors, which describes the relationship between the strength and electromigration (diffusion) properties of interfaces formed by connected materials. In the developed model, a linear relationship is established between the values of the work of reversible interface separation <span>\\({{W}_{a}}\\)</span> and electromigration activation energy <span>\\({{H}_{{EM}}}\\)</span> in the interface. Estimates are made and the coefficients of the resulting relation are compared with experiments studying electromigration in a copper conductor coated with a protective dielectric. Using also the model previously developed by the authors, which describes the dependence of the quantity <span>\\({{W}_{a}}\\)</span> on the concentrations of nonequilibrium lattice defects presenting in the volumes of connected materials, a number of effects due to the influence of such defects on processes caused by electromigration are predicted and studied. This study shows that by introducing nonequilibrium lattice defects in the form of atomic interstitial or substitutional impurities into the volumes of the joined materials, we can effectively influence on the characteristics of the electromigration instability of the shape of the interlayer boundary. For interstitial impurities, quantitative analytical estimates of the impurity concentration required to significantly change (both increase and decrease) the characteristic growth time of the instability of the shape of an initially flat interface are performed.</p>","PeriodicalId":21534,"journal":{"name":"Russian Microelectronics","volume":"26 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-07-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Russian Microelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1134/s1063739724600286","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"Engineering","Score":null,"Total":0}
引用次数: 0
Abstract
This study improves and expands the scope of application of the theoretical model previously proposed by the authors, which describes the relationship between the strength and electromigration (diffusion) properties of interfaces formed by connected materials. In the developed model, a linear relationship is established between the values of the work of reversible interface separation \({{W}_{a}}\) and electromigration activation energy \({{H}_{{EM}}}\) in the interface. Estimates are made and the coefficients of the resulting relation are compared with experiments studying electromigration in a copper conductor coated with a protective dielectric. Using also the model previously developed by the authors, which describes the dependence of the quantity \({{W}_{a}}\) on the concentrations of nonequilibrium lattice defects presenting in the volumes of connected materials, a number of effects due to the influence of such defects on processes caused by electromigration are predicted and studied. This study shows that by introducing nonequilibrium lattice defects in the form of atomic interstitial or substitutional impurities into the volumes of the joined materials, we can effectively influence on the characteristics of the electromigration instability of the shape of the interlayer boundary. For interstitial impurities, quantitative analytical estimates of the impurity concentration required to significantly change (both increase and decrease) the characteristic growth time of the instability of the shape of an initially flat interface are performed.
期刊介绍：
Russian Microelectronics covers physical, technological, and some VLSI and ULSI circuit-technical aspects of microelectronics and nanoelectronics; it informs the reader of new trends in submicron optical, x-ray, electron, and ion-beam lithography technology; dry processing techniques, etching, doping; and deposition and planarization technology. Significant space is devoted to problems arising in the application of proton, electron, and ion beams, plasma, etc. Consideration is given to new equipment, including cluster tools and control in situ and submicron CMOS, bipolar, and BICMOS technologies. The journal publishes papers addressing problems of molecular beam epitaxy and related processes; heterojunction devices and integrated circuits; the technology and devices of nanoelectronics; and the fabrication of nanometer scale devices, including new device structures, quantum-effect devices, and superconducting devices. The reader will find papers containing news of the diagnostics of surfaces and microelectronic structures, the modeling of technological processes and devices in micro- and nanoelectronics, including nanotransistors, and solid state qubits.
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