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Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)最新文献

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Multiple micro-cavity laser with /spl lambda//4-wide deep grooves buried with benzocyclobutene 多微腔激光器/spl λ //4宽深沟槽埋有苯并环丁烯
Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362) Pub Date : 1999-05-16 DOI: 10.1109/ICIPRM.1999.773670
M. Madhan Raj, S. Toyoshima, S. Arai
{"title":"Multiple micro-cavity laser with /spl lambda//4-wide deep grooves buried with benzocyclobutene","authors":"M. Madhan Raj, S. Toyoshima, S. Arai","doi":"10.1109/ICIPRM.1999.773670","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773670","url":null,"abstract":"Multiple micro-cavity (MMC) lasers, which consist of /spl lambda//4-wide deep grooves buried with benzocyclobutene (BCB) polymer, were realized by the CH/sub 4//H/sub 2/-RIE dry etching process. Threshold current as low as 30 mA was obtained at 200 K for the micro-cavity length 5.1 /spl mu/m (groove width 183 nm, pitch /spl Lambda/=5.3 /spl mu/m, total cavity length L=300 /spl mu/m, stripe width W/sub s/=5 /spl mu/m). A stable single-wavelength operation for a wide temperature range (100-200 K) was obtained with the temperature coefficient 0.06 nm/deg. The room temperature operation of an MMC laser consisting of 3/spl lambda//4-BCB buried grooves (=0.70 /spl mu/m) was also obtained with threshold current as low as 18 mA for the total cavity length of 200 /spl mu/m (/spl Lambda/=20=/spl mu/m, 10 elements, W/sub s/=5 /spl mu/m), and the effective reflectivity of the MMC structure was estimated to be 94%.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"254 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115952527","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Temperature-dependent performance of 1.55 /spl mu/m vertical-cavity lasers with InGaAsP/InP bottom mirror 1.55 /spl mu/m InGaAsP/InP底镜垂直腔激光器的温度特性
Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362) Pub Date : 1999-05-16 DOI: 10.1109/ICIPRM.1999.773675
F. Salomonsson, S. Mogg, S. Rapp, J. Bentell, I. Sagnes, R. Raj, K. Streubel, M. Hammar
{"title":"Temperature-dependent performance of 1.55 /spl mu/m vertical-cavity lasers with InGaAsP/InP bottom mirror","authors":"F. Salomonsson, S. Mogg, S. Rapp, J. Bentell, I. Sagnes, R. Raj, K. Streubel, M. Hammar","doi":"10.1109/ICIPRM.1999.773675","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773675","url":null,"abstract":"We have fabricated and evaluated a long-wavelength vertical-cavity laser (VCL) based on an epitaxially integrated InP distributed Bragg reflector (DBR) under continuous wave (CW) and pulsed conditions. We conclude that, for an InP-DBR-down configuration, the high temperature performance is limited by the heat conductivity of the bottom mirror. The highest operating temperature for CW and pulsed condition is 17/spl deg/C and 101/spl deg/C respectively, indicating a substantial self-heating for CW. To investigate the prospect for improved performance in other mounting configurations, we have applied a two-dimensional finite element analysis to the heat transfer problem. It is suggested that for top-side-down mounting with the AlGaAs/GaAs DBR closest to the heat sink, a performance comparable to that of so called double-fused VCLs could be possible.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114717081","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
50 GHz monolithically integrated InP/InGaAs PIN/HBT-receiver 50ghz单片集成InP/InGaAs PIN/ hbt接收机
Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362) Pub Date : 1999-05-16 DOI: 10.1109/ICIPRM.1999.773765
D. Huber, M. Bitter, E. Gini, A. Neiger, T. Morf, C. Bergamaschi, H. Jackel
{"title":"50 GHz monolithically integrated InP/InGaAs PIN/HBT-receiver","authors":"D. Huber, M. Bitter, E. Gini, A. Neiger, T. Morf, C. Bergamaschi, H. Jackel","doi":"10.1109/ICIPRM.1999.773765","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773765","url":null,"abstract":"We have designed and fabricated a monolithically integrated InP/InGaAs PIN/HBT-photoreceiver for a wavelength of /spl lambda/=1.55 /spl mu/m. The transimpedance amplifier achieves a gain of 44.6 dB/spl Omega/ 170 /spl Omega/, and the optical/electrical -3 dB-bandwidth of the entire receiver is 50 GHz, the largest bandwidth reported for any long-wavelength receiver OEIC.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127338053","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Energy gaps and bowing of interband gaps of lattice matched In/sub 1-x/Ga/sub x/As/sub y/P/sub 1-y//InP In/sub - 1-x/Ga/sub -x/ As/sub -y/ P/sub - 1-y//InP晶格带间隙的能隙和弯曲
Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362) Pub Date : 1999-05-16 DOI: 10.1109/ICIPRM.1999.773658
C. Reh, G. Weiser
{"title":"Energy gaps and bowing of interband gaps of lattice matched In/sub 1-x/Ga/sub x/As/sub y/P/sub 1-y//InP","authors":"C. Reh, G. Weiser","doi":"10.1109/ICIPRM.1999.773658","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773658","url":null,"abstract":"Electroreflectance spectra at low temperature are measured to evaluate the compositional dependence of energy gaps and spin orbit splitting of In/sub 1-x/Ga/sub x/As/sub y/P/sub 1-y/ alloys at different points in the Brillouin zone. The Kramers-Kronig transformation of reflectance spectra provides the Seraphin coefficients for a quantitative lineshape analysis which improves further the accuracy of the band gaps derived. The band gap E/sub 1/ at L changes from a minimum, M/sub 0/, in InP to a saddle point, M/sub 1/, in the alloys. Collisional broadening varies with composition and increases for all compositions strongly with energy. The bowing parameter vary strongly for different gaps in contrast to commonly used models.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125690590","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Solid source molecular beam epitaxy growth of low threshold and high temperature 1.3 /spl mu/m AlGaInAs-AlInAs-InP laser diodes suitable for uncooled application 固体源分子束外延生长低阈值和高温1.3 /spl mu/m AlGaInAs-AlInAs-InP激光二极管，适合非冷却应用
Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362) Pub Date : 1999-05-16 DOI: 10.1109/ICIPRM.1999.773644
P. Savolainen, M. Toivonen, P. Melanen, V. Vilokkinen, M. Saarinen, S. Orsila, T. Kuuslahti, A. Salokatve, H. Asonen, T. Panarello, R. Murisonib, M. Pessa
{"title":"Solid source molecular beam epitaxy growth of low threshold and high temperature 1.3 /spl mu/m AlGaInAs-AlInAs-InP laser diodes suitable for uncooled application","authors":"P. Savolainen, M. Toivonen, P. Melanen, V. Vilokkinen, M. Saarinen, S. Orsila, T. Kuuslahti, A. Salokatve, H. Asonen, T. Panarello, R. Murisonib, M. Pessa","doi":"10.1109/ICIPRM.1999.773644","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773644","url":null,"abstract":"Al/sub x/Ga/sub y/ln/sub 1-x-y/As/InP strained-layer multiple quantum well lasers emitting at 1.3 /spl mu/m have been grown by solid source molecular beam epitaxy, and the performance characteristics have been studied. The lasers contain 4, 5, or 6 compressively strained quantum wells in the active region. They exhibit low transparency current densities, high gain coefficients, and high characteristic temperatures compared to conventional GaInAsP-InP quantum well lasers. The results show that desired lasing features can be achieved with relatively simple layer structures if the doping profiles and waveguide structures are properly designed and the material is grown to high structural perfection.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127004538","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Optically pumped GaInNAs-DFB lasers in the 1.1 /spl mu/m range grown by ECR-MBE ECR-MBE在1.1 /spl mu/m范围内的光抽运GaInNAs-DFB激光器
Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362) Pub Date : 1999-05-16 DOI: 10.1109/ICIPRM.1999.773629
M. Reinhardt, M. Fischer, A. Forchel
{"title":"Optically pumped GaInNAs-DFB lasers in the 1.1 /spl mu/m range grown by ECR-MBE","authors":"M. Reinhardt, M. Fischer, A. Forchel","doi":"10.1109/ICIPRM.1999.773629","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773629","url":null,"abstract":"We report on the growth, fabrication and characterization of index coupled 1/sup st/ order DFB lasers on GaInNAs. A good quaternary GaInNAs layer quality could be achieved by using solid source molecular beam epitaxy and an electron cyclotron resonance source for nitrogen generation. GaInNAs QW's embedded in a waveguide laser structure were pumped optically. The evanescent field of the laser mode couples strongly to the effective refractive index modulation of a DFB grating on top of the ridge waveguide. Monomode emission peaks depending on the grating period are obtained at room temperature.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125939201","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Integration of optical amplifiers and passive waveguide devices on InP using selective area chemical beam epitaxy 利用选择性区域化学束外延将光放大器和无源波导器件集成到InP上
Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362) Pub Date : 1999-05-16 DOI: 10.1109/ICIPRM.1999.773710
P. Harmsma, M. Leys, C. Verschuren, H. Vonk, M. Smit, Y. Oei
{"title":"Integration of optical amplifiers and passive waveguide devices on InP using selective area chemical beam epitaxy","authors":"P. Harmsma, M. Leys, C. Verschuren, H. Vonk, M. Smit, Y. Oei","doi":"10.1109/ICIPRM.1999.773710","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773710","url":null,"abstract":"High quality butt joints were fabricated in the InGaAsP system using a Selective Area Chemical Beam Epitaxy (SA-CBE) regrowth step. Coupling losses were as low as 0.1 dB/interface for butt joints between similar transparent layer stacks. Active and passive regions were defined on a single chip using SA-CBE. Semiconductor optical amplifiers (SOAs) and transparent waveguides were fabricated in their appropriate regions. Extended cavity lasers, consisting of SOAs with passive waveguides on both sides, showed stable CW laser operation at a wavelength of 1.56 /spl mu/m. SA-CBE offers maximum design flexibility, since each device can be fabricated in its own optimized layer stack.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"84 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124952482","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
190 GHz InP HEMT MMIC LNA with dry etched backside vias 带干蚀刻背面过孔的190ghz InP HEMT MMIC LNA
Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362) Pub Date : 1999-05-16 DOI: 10.1109/ICIPRM.1999.773723
M. Barsky, R. Lai, Y. Kok, M. Sholley, D. Streit, T. Block, P. Liu, E. Sabin, H. Rogers, V. Medvedev, T. Gaier, L. Samoska
{"title":"190 GHz InP HEMT MMIC LNA with dry etched backside vias","authors":"M. Barsky, R. Lai, Y. Kok, M. Sholley, D. Streit, T. Block, P. Liu, E. Sabin, H. Rogers, V. Medvedev, T. Gaier, L. Samoska","doi":"10.1109/ICIPRM.1999.773723","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773723","url":null,"abstract":"We report an InP HEMT MMIC LNA incorporating dry etched backside ground plane vias with an on-wafer measured peak gain of 9.6 dB at 190 GHz. The 2-stage balanced LNA exhibited over 7 dB gain across a 30 GHz bandwidth. The high gain and high operating frequency of the amplifier is attributed to the lower source inductance provided by the 25 /spl mu/m dry etched ground vias, the 80 nm T-gate, and the graded In/sub 0.80/Ga/sub 0.20/As channel HEMT.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124146925","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
MOCVD growth assessment of the first all monolithic 1.56 /spl mu/m VCSELs with GaInAlAs/InP system 采用GaInAlAs/InP系统的首批全单片1.56 /spl mu/m vcsel的MOCVD生长评估
Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362) Pub Date : 1999-05-16 DOI: 10.1109/ICIPRM.1999.773751
I. Sagnes, G. Le Roux, P. Legay, C. Kazmierski, J. Palmier, J. Debray
{"title":"MOCVD growth assessment of the first all monolithic 1.56 /spl mu/m VCSELs with GaInAlAs/InP system","authors":"I. Sagnes, G. Le Roux, P. Legay, C. Kazmierski, J. Palmier, J. Debray","doi":"10.1109/ICIPRM.1999.773751","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773751","url":null,"abstract":"Using an InP lattice matched InGaAlAs/InAlAs system we have grown in a single epitaxial step the first all-monolithic vertical laser structure on InP substrate. Pulse lasing at 1.56 /spl mu/m has been obtained up to +55/spl deg/C with 45 /spl mu/m diameter planar diodes defined by proton implantation. Thermal resistance of bottom emitting lasers about 420 K/W has been estimated from Fabry-Perot cavity wavelength shift. The reported characterizations indicate the potential of this material system laser for CW operation and for a simple large-scale industrial processing.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"142 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121582700","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optics of excitons in InGaAs/InP quantum wells InGaAs/InP量子阱中激子的光学
Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362) Pub Date : 1999-05-16 DOI: 10.1109/ICIPRM.1999.773746
J. Borgulová, B. Rheinlander, J. Kováè, F. Uherek, V. Gottschalch, G. Wagner, S. Nassauer, G. Benndorf, M. Gerhardt, J. Škriniarová, J. Jakabovie
{"title":"Optics of excitons in InGaAs/InP quantum wells","authors":"J. Borgulová, B. Rheinlander, J. Kováè, F. Uherek, V. Gottschalch, G. Wagner, S. Nassauer, G. Benndorf, M. Gerhardt, J. Škriniarová, J. Jakabovie","doi":"10.1109/ICIPRM.1999.773746","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773746","url":null,"abstract":"We report on the analysis of the structures with In/sub 0.53/Ga/sub 0.47/As/InP quantum wells (QW) for use in tunable resonant cavity enhanced photodetectors operating at a wavelength of 1550 nm. The structures were prepared by low-pressure MOVPE. The optical properties were analysed by spectral ellipsometry, photoluminescence and photocurrent measurements. The excitonic transition energies are slightly shifted to lower values in comparison with theoretical model. This difference can be explained by the formation of InAs or InAsP monolayer at the interface between InGaAs QW and InP barrier. For the MQW PIN diode with 20 wells we measured a Stark shift of 20 meV at an applied electric field of 10 V/im.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"84 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131694721","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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