带干蚀刻背面过孔的190ghz InP HEMT MMIC LNA

Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362) Pub Date : 1999-05-16 DOI:10.1109/ICIPRM.1999.773723

M. Barsky, R. Lai, Y. Kok, M. Sholley, D. Streit, T. Block, P. Liu, E. Sabin, H. Rogers, V. Medvedev, T. Gaier, L. Samoska

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引用次数: 13

摘要

我们报道了一种采用干蚀刻背面地平面通孔的InP HEMT MMIC LNA，其在190 GHz时的片上测量峰值增益为9.6 dB。两级平衡LNA在30 GHz带宽上的增益超过7 dB。放大器的高增益和高工作频率归功于25 /spl mu/m干蚀刻接地通孔、80 nm t栅和渐变In/sub 0.80/Ga/sub 0.20/As通道HEMT提供的较低源电感。

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190 GHz InP HEMT MMIC LNA with dry etched backside vias

We report an InP HEMT MMIC LNA incorporating dry etched backside ground plane vias with an on-wafer measured peak gain of 9.6 dB at 190 GHz. The 2-stage balanced LNA exhibited over 7 dB gain across a 30 GHz bandwidth. The high gain and high operating frequency of the amplifier is attributed to the lower source inductance provided by the 25 /spl mu/m dry etched ground vias, the 80 nm T-gate, and the graded In/sub 0.80/Ga/sub 0.20/As channel HEMT.

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Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)

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