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Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)最新文献

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1.3 /spl mu/m emission of TlGaP-LEDs grown on GaAs 在GaAs上生长的tlgap - led的1.3 /spl mu/m发射
Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362) Pub Date : 1999-05-16 DOI: 10.1109/ICIPRM.1999.773766
A. Hubener, J. Schobel, A. Mallwitz, W. Kowalsky
{"title":"1.3 /spl mu/m emission of TlGaP-LEDs grown on GaAs","authors":"A. Hubener, J. Schobel, A. Mallwitz, W. Kowalsky","doi":"10.1109/ICIPRM.1999.773766","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773766","url":null,"abstract":"We investigate the growth of the new III-V semiconductor TlGaP on GaAs substrates. TlGaP is a very interesting material for a wide range of emission wavelengths. X-ray diffraction measurements indicate the growth of lattice-matched TlGaP on GaAs. The photoluminescence spectra show room-temperature emission at wavelengths around 1.3 /spl mu/m, which manifests good crystal quality. The electroluminescence spectrum of the first TlGaP LED is in good agreement with the photoluminescence measurements.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123154052","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Composite-channel InP HEMT for W-band power amplifiers 用于w波段功率放大器的复合通道InP HEMT
Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362) Pub Date : 1999-05-16 DOI: 10.1109/ICIPRM.1999.773695
Y.C. Chen, P. Chin, D. Ingram, R. Lai, R. Grundbacher, M. Barsky, T. Block, M. Wojtowicz, L. Tran, V. Medvedev, H. Yen, D. Streit, A. Brown
{"title":"Composite-channel InP HEMT for W-band power amplifiers","authors":"Y.C. Chen, P. Chin, D. Ingram, R. Lai, R. Grundbacher, M. Barsky, T. Block, M. Wojtowicz, L. Tran, V. Medvedev, H. Yen, D. Streit, A. Brown","doi":"10.1109/ICIPRM.1999.773695","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773695","url":null,"abstract":"We have developed composite-channel InP-InGaAs HEMTs for W-band high power amplifier applications. The optimized 0.15 /spl mu/m T-gate device demonstrated state-of-the-art g/sub m/-I/sub max/ combination. It also showed a 1.5 V improvement in on-state and off-state breakdown over the conventional InP HEMT without degrading the RF performance. A two-stage MMIC power amplifier built on this device delivered 25 dBm output power with 17 dB linear gain at 94 GHz as measured on wafer. To our knowledge, this is the first demonstration of composite-channel HEMT at 94 GHz with excellent power performance.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"305 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116796424","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
High reliable, low threshold 1.3 /spl mu/m SL-QW PACIS (p-substrate Al-oxide Confined Inner Stripe) laser array 高可靠、低阈值1.3 /spl mu/m SL-QW PACIS (p-substrate Al-oxide limited Inner Stripe)激光阵列
Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362) Pub Date : 1999-05-16 DOI: 10.1109/ICIPRM.1999.773674
N. Iwai, T. Mukaihara, N. Yamanaka, M. Itoh, S. Arakawa, H. Shimizu, A. Kasukawa
{"title":"High reliable, low threshold 1.3 /spl mu/m SL-QW PACIS (p-substrate Al-oxide Confined Inner Stripe) laser array","authors":"N. Iwai, T. Mukaihara, N. Yamanaka, M. Itoh, S. Arakawa, H. Shimizu, A. Kasukawa","doi":"10.1109/ICIPRM.1999.773674","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773674","url":null,"abstract":"A 1.3 /spl mu/m Al-oxide confined inner stripe laser on p-InP substrate (PACIS) has been demonstrated for low cost laser array application. First, we have investigated the oxidation rate of Al/sub x/In/sub 1-x/As layer grown on InP substrate. The optimum conditions were found to be oxidation temperature=500/spl deg/C, layer thickness=100 nm, and Al-contents=0.48 (lattice-match) taking oxidation rate and surface morphology into account. The 50 nm-thick Al/sub 0.48/In/sub 0.52/As-oxide layer provides good current blocking for laser applications. Based on the above investigations, the fabricated PACIS laser shows a low threshold current of 4.0 mA and a high slope efficiency of 0.6 W/A. We have also confirmed high reliability under driving time over 3,000 hours at 85/spl deg/C, 5 mW. A 22-channel laser array consisted of PACIS structure have the average threshold current of 3.98 mA and the standard deviation of 0.42 mA.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"240 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116873496","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
InP-based microcavity light emitting diodes emitting at 1.3 /spl mu/m and 1.55 /spl mu/m 基于inp的微腔发光二极管的发光速率分别为1.3 /spl μ m和1.55 /spl μ m
Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362) Pub Date : 1999-05-16 DOI: 10.1109/ICIPRM.1999.773676
B. Depreter, S. Verstuyft, I. Moerman, R. Baets, P. van Daele
{"title":"InP-based microcavity light emitting diodes emitting at 1.3 /spl mu/m and 1.55 /spl mu/m","authors":"B. Depreter, S. Verstuyft, I. Moerman, R. Baets, P. van Daele","doi":"10.1109/ICIPRM.1999.773676","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773676","url":null,"abstract":"We present MOCVD-grown InP-based microcavity light emitting diodes emitting at 1300 nm and 1550 nm. They contain 3 InGaAsP quantum wells sandwiched in a /spl lambda/ cavity defined by an InP/InGaAsP distributed Bragg reflector and a 200 nm evaporated Au mirror. Enhanced spectral purity is demonstrated and we observe a total external quantum efficiency of at least 5%. This represents a substantial increase compared to the maximum efficiency that can be extracted from a single facet of a Lambertian source. To the authors' knowledge these are the highest values ever reported for this kind of device.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117146189","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Thermal behavior of atomic hydrogen passivated acceptors in p-InP p-InP中原子氢钝化受体的热行为
Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362) Pub Date : 1999-05-16 DOI: 10.1109/ICIPRM.1999.773680
E. Rao, B. Theys, Y. Gottesman, H. Bissessnr
{"title":"Thermal behavior of atomic hydrogen passivated acceptors in p-InP","authors":"E. Rao, B. Theys, Y. Gottesman, H. Bissessnr","doi":"10.1109/ICIPRM.1999.773680","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773680","url":null,"abstract":"The Zn and Be doped (1 to 2/spl times/10/sup 18/ cm/sup -3/) p-InP samples are first hydrogenated by exposing to a deuterium (D) plasma to passivate (or neutralize) acceptors through dopant-H interactions. Later on, subsequent to 10 min isochronal anneals up to 450/spl deg/C, the reactivation of holes is monitored to determine activation energies, /spl sim/0.7 eV for Zn and 1.08 eV for Be. These values clearly imply a good thermal stability of acceptor passivation and open a way for the implementation of hydrogenation in the photon device technology.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117157291","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A 50 mm copper/polymer substrate HBT IC technology for >100 GHz MMICs 50mm铜/聚合物衬底HBT集成电路技术，适用于> 100ghz mmic
Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362) Pub Date : 1999-05-16 DOI: 10.1109/ICIPRM.1999.773724
J. Guthrie, D. Mensa, T. Mathew, Q. Lee, S. Krishnan, S. Jaganathan, S. Ceran, Y. Betser, M. Rodwell
{"title":"A 50 mm copper/polymer substrate HBT IC technology for >100 GHz MMICs","authors":"J. Guthrie, D. Mensa, T. Mathew, Q. Lee, S. Krishnan, S. Jaganathan, S. Ceran, Y. Betser, M. Rodwell","doi":"10.1109/ICIPRM.1999.773724","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773724","url":null,"abstract":"We report HBT integrated circuits fabricated by substrate transfer on 50 mm diameter copper/polymer substrates. Layout and packaging of complex /spl sim/100 GHz circuits is facilitated by the microstrip wiring environment and the low ground lead inductance it affords. For ICs operating above 100 GHz, the process allows radical scaling of the microstrip dielectric thickness without requiring handling of delicate thinned III-V wafers. The process can provide greatly improved heatsinking. Furthermore, full 50 mm wafers can be processed incorporating transferred substrate HBTs, devices which have obtained >500 GHz f/sub max/.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121005451","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Improved homogeneity of LP-MOVPE grown InP/GaInAsP heterostructure for DBR using an optimized liner and susceptor arrangement 采用优化的衬垫和感受器布置改善了LP-MOVPE生长的InP/GaInAsP异质结构的均匀性
Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362) Pub Date : 1999-05-16 DOI: 10.1109/ICIPRM.1999.773654
R. Westphalen, G. Landgren, B. Stalnacke, R. Beccard
{"title":"Improved homogeneity of LP-MOVPE grown InP/GaInAsP heterostructure for DBR using an optimized liner and susceptor arrangement","authors":"R. Westphalen, G. Landgren, B. Stalnacke, R. Beccard","doi":"10.1109/ICIPRM.1999.773654","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773654","url":null,"abstract":"Growth of distributed Bragg reflectors and strain compensated MQW for 1550 nm VCSEL have been investigated in a AIX 200/4 LP-MOVPE system with a 3/spl times/2\" wafer configuration using an improved liner and susceptor configuration. The shift in the stopband wavelength for DBR could be reduced by one order of magnitude down to +0.6% (+9 nm) within 40 mm diameter compared to the standard setup. For 1420 nm quaternary layers used in such DBR the area with a wavelength shift of less the 1 nm can nearly be doubled. In case of strain compensated MQW a similar improvement in wavelength homogeneity was observed, mainly due to reduced thickness variation from /spl plusmn/2.5% to /spl plusmn/0.8%.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115113009","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Properties of fully self-aligned InAlAs/InGaAs PNP HBTs with very thin bases 具有极薄基底的全自对准InAlAs/InGaAs PNP HBTs的性质
Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362) Pub Date : 1999-05-16 DOI: 10.1109/ICIPRM.1999.773665
D. Sawdai, X. Zhang, D. Cui, D. Pavlidis, P. Bhattacharya
{"title":"Properties of fully self-aligned InAlAs/InGaAs PNP HBTs with very thin bases","authors":"D. Sawdai, X. Zhang, D. Cui, D. Pavlidis, P. Bhattacharya","doi":"10.1109/ICIPRM.1999.773665","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773665","url":null,"abstract":"For the first time, the effect of base thickness and parasitic collector resistance on InP-based PNP HBTs was determined experimentally. HBTs with 350-/spl Aring/ and 900-/spl Aring/ base layers and self-aligned collector contacts demonstrated DC gain of 21.3 and 5.9, f/sub T/ of 18.6 and 8.5 GHz, and f/sub max/ of 27.3 and 20.8 GHz, respectively. This is the highest f/sub T/ reported for any InP-based PNP HBT. Analysis of these HBTs demonstrated that recombination of holes in the neutral base limited the DC gain, and hole transit across the base was the most significant component of /spl tau//sub ec/. In addition, comparison of HBTs with and without self-aligned collectors demonstrated that collector series resistance had a minor but noticeable impact on f/sub T/ as well as the gain and power-added efficiency at 8 GHz.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121887801","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
High-speed InP/InGaAs heterojunction phototransistor for millimetre-wave fibre radio communications 毫米波光纤无线电通信用高速InP/InGaAs异质结光电晶体管
Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362) Pub Date : 1999-05-16 DOI: 10.1109/ICIPRM.1999.773715
J. Thuret, C. Gonzalez, J. Benchimol, M. Riet, P. Berdaguer
{"title":"High-speed InP/InGaAs heterojunction phototransistor for millimetre-wave fibre radio communications","authors":"J. Thuret, C. Gonzalez, J. Benchimol, M. Riet, P. Berdaguer","doi":"10.1109/ICIPRM.1999.773715","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773715","url":null,"abstract":"We report on the performance of a graded-base InP/InGaAs heterojunction phototransistor (HPT) as a direct photodetector and an optoelectronic up-converter in 30 GHz band, investigated at a wavelength of 1.55 /spl mu/m. HPT performances were improved according to the optimised base contact design in order to obtain a higher optical gain G/sub opt/ up to the millimetre-wave range. It is also shown, by analysis and measurements, that a complete description of HPTs can be made using a three-port network representation, with the optical window as an input port. This approach has several advantages in particular, the extraction of the 'optical' transducer power gain G/sub OT/ of the HPTs, needed for designing optoelectronic integrated circuits, OEIC.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128445651","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 20
Single step growth of buried InP layer using selective rapid thermal MOCVD 选择性快速热MOCVD法单步生长埋地InP层
Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362) Pub Date : 1999-05-16 DOI: 10.1109/ICIPRM.1999.773634
O. Kreinin, G. Bahir
{"title":"Single step growth of buried InP layer using selective rapid thermal MOCVD","authors":"O. Kreinin, G. Bahir","doi":"10.1109/ICIPRM.1999.773634","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773634","url":null,"abstract":"Rapid thermal MOCVD process has been used to study the selective growth of InP on [001] InP substrate using an ion implanted mask-less definition for the selective epitaxy. The selectivity of InP growth on the un-implanted area is controlled by the TMIn partial pressure and can reach complete growth inhibition on the implanted area. We used the combined nature of the rapid thermal MOCVD system to demonstrate two additional steps: (a) in situ annealing of the ion implanted damaged area and (b) re-growth of Fe:InP layers on the primary \"masked surface\", to produce a buried layer in a single growth sequence. High lateral resolution and high quality un-doped and Fe doped semi-insulated InP layers are demonstrated.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"98 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124576277","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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