p-InP中原子氢钝化受体的热行为

Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362) Pub Date : 1999-05-16 DOI:10.1109/ICIPRM.1999.773680

E. Rao, B. Theys, Y. Gottesman, H. Bissessnr

{"title":"p-InP中原子氢钝化受体的热行为","authors":"E. Rao, B. Theys, Y. Gottesman, H. Bissessnr","doi":"10.1109/ICIPRM.1999.773680","DOIUrl":null,"url":null,"abstract":"The Zn and Be doped (1 to 2/spl times/10/sup 18/ cm/sup -3/) p-InP samples are first hydrogenated by exposing to a deuterium (D) plasma to passivate (or neutralize) acceptors through dopant-H interactions. Later on, subsequent to 10 min isochronal anneals up to 450/spl deg/C, the reactivation of holes is monitored to determine activation energies, /spl sim/0.7 eV for Zn and 1.08 eV for Be. These values clearly imply a good thermal stability of acceptor passivation and open a way for the implementation of hydrogenation in the photon device technology.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"63 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Thermal behavior of atomic hydrogen passivated acceptors in p-InP\",\"authors\":\"E. Rao, B. Theys, Y. Gottesman, H. Bissessnr\",\"doi\":\"10.1109/ICIPRM.1999.773680\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The Zn and Be doped (1 to 2/spl times/10/sup 18/ cm/sup -3/) p-InP samples are first hydrogenated by exposing to a deuterium (D) plasma to passivate (or neutralize) acceptors through dopant-H interactions. Later on, subsequent to 10 min isochronal anneals up to 450/spl deg/C, the reactivation of holes is monitored to determine activation energies, /spl sim/0.7 eV for Zn and 1.08 eV for Be. These values clearly imply a good thermal stability of acceptor passivation and open a way for the implementation of hydrogenation in the photon device technology.\",\"PeriodicalId\":213868,\"journal\":{\"name\":\"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)\",\"volume\":\"63 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-05-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1999.773680\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1999.773680","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

Zn和Be掺杂(1至2/spl倍/10/sup 18/ cm/sup -3/)的p-InP样品首先通过暴露于氘(D)等离子体通过掺杂物- h相互作用钝化(或中和)受体进行氢化。随后，在高达450/spl度/C的10分钟等时退火后，监测空穴的再激活以确定活化能，Zn为0.7 eV, Be为1.08 eV。这些数值表明受体钝化具有良好的热稳定性，为在光子器件技术中实现氢化开辟了一条道路。

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Thermal behavior of atomic hydrogen passivated acceptors in p-InP

The Zn and Be doped (1 to 2/spl times/10/sup 18/ cm/sup -3/) p-InP samples are first hydrogenated by exposing to a deuterium (D) plasma to passivate (or neutralize) acceptors through dopant-H interactions. Later on, subsequent to 10 min isochronal anneals up to 450/spl deg/C, the reactivation of holes is monitored to determine activation energies, /spl sim/0.7 eV for Zn and 1.08 eV for Be. These values clearly imply a good thermal stability of acceptor passivation and open a way for the implementation of hydrogenation in the photon device technology.

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Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)

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