在GaAs上生长的tlgap - led的1.3 /spl mu/m发射

Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362) Pub Date : 1999-05-16 DOI:10.1109/ICIPRM.1999.773766

A. Hubener, J. Schobel, A. Mallwitz, W. Kowalsky

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引用次数: 1

摘要

我们研究了新型III-V型半导体TlGaP在GaAs衬底上的生长。TlGaP是一种非常有趣的材料，具有很宽的发射波长范围。x射线衍射测量表明，晶格匹配的TlGaP在GaAs上生长。光致发光光谱显示在1.3 /spl mu/m左右的波长有室温发射，晶体质量良好。第一个TlGaP LED的电致发光光谱与光致发光测量结果吻合良好。

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1.3 /spl mu/m emission of TlGaP-LEDs grown on GaAs

We investigate the growth of the new III-V semiconductor TlGaP on GaAs substrates. TlGaP is a very interesting material for a wide range of emission wavelengths. X-ray diffraction measurements indicate the growth of lattice-matched TlGaP on GaAs. The photoluminescence spectra show room-temperature emission at wavelengths around 1.3 /spl mu/m, which manifests good crystal quality. The electroluminescence spectrum of the first TlGaP LED is in good agreement with the photoluminescence measurements.

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Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)

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