InP-based microcavity light emitting diodes emitting at 1.3 /spl mu/m and 1.55 /spl mu/m

Abstract

We present MOCVD-grown InP-based microcavity light emitting diodes emitting at 1300 nm and 1550 nm. They contain 3 InGaAsP quantum wells sandwiched in a /spl lambda/ cavity defined by an InP/InGaAsP distributed Bragg reflector and a 200 nm evaporated Au mirror. Enhanced spectral purity is demonstrated and we observe a total external quantum efficiency of at least 5%. This represents a substantial increase compared to the maximum efficiency that can be extracted from a single facet of a Lambertian source. To the authors' knowledge these are the highest values ever reported for this kind of device.