高可靠、低阈值1.3 /spl mu/m SL-QW PACIS (p-substrate Al-oxide limited Inner Stripe)激光阵列

Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362) Pub Date : 1999-05-16 DOI:10.1109/ICIPRM.1999.773674

N. Iwai, T. Mukaihara, N. Yamanaka, M. Itoh, S. Arakawa, H. Shimizu, A. Kasukawa

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引用次数: 1

摘要

在p-InP衬底上制备了一种1.3 /spl μ m Al-oxide密闭内条形激光器(PACIS)，用于低成本激光阵列。首先，我们研究了在InP衬底上生长的Al/sub x/In/sub 1-x/As层的氧化速率。考虑氧化速率和表面形貌，最佳条件为氧化温度=500/spl℃，层厚=100 nm, al含量=0.48(晶格匹配)。50 nm厚的Al/sub 0.48/In/sub 0.52/ as -氧化物层为激光应用提供了良好的电流阻挡。基于上述研究，所制备的PACIS激光器具有4.0 mA的低阈值电流和0.6 W/ a的高斜率效率。我们还证实，在85/spl度/C、5 mW的条件下，在超过3000小时的行驶时间内，该系统具有很高的可靠性。由PACIS结构组成的22通道激光阵列的平均阈值电流为3.98 mA，标准差为0.42 mA。

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High reliable, low threshold 1.3 /spl mu/m SL-QW PACIS (p-substrate Al-oxide Confined Inner Stripe) laser array

A 1.3 /spl mu/m Al-oxide confined inner stripe laser on p-InP substrate (PACIS) has been demonstrated for low cost laser array application. First, we have investigated the oxidation rate of Al/sub x/In/sub 1-x/As layer grown on InP substrate. The optimum conditions were found to be oxidation temperature=500/spl deg/C, layer thickness=100 nm, and Al-contents=0.48 (lattice-match) taking oxidation rate and surface morphology into account. The 50 nm-thick Al/sub 0.48/In/sub 0.52/As-oxide layer provides good current blocking for laser applications. Based on the above investigations, the fabricated PACIS laser shows a low threshold current of 4.0 mA and a high slope efficiency of 0.6 W/A. We have also confirmed high reliability under driving time over 3,000 hours at 85/spl deg/C, 5 mW. A 22-channel laser array consisted of PACIS structure have the average threshold current of 3.98 mA and the standard deviation of 0.42 mA.

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Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)

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