基于inp的热离子冷却器

Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362) Pub Date : 1999-05-20 DOI:10.1109/ICIPRM.1999.773733

A. Shakouri, C. Labounty, P. Abraham, J. Piprek, J. Bowers

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引用次数: 3

摘要

热电冷却器是许多光电系统的重要组成部分。目前的商用冷却器是基于非传统的半导体，如BiTe。本文分析了InP基材料用于制造可与光电元件集成的冷却器的前景。实验结果表明，利用InGaAs/InGaAsP异质结构中的热离子发射电流可以提高传统块状材料的冷却能力。在1 /spl mu/m厚的屏障上观察到大约一度的冷却(即冷却功率为200-300 W/cm/sup /)。对InGaAs/InAlAs超晶格的计算表明，单阶段冷却应该可以达到20-30度。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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InP-based thermionic coolers

Thermoelectric coolers are important elements of many optoelectronic systems. Current commercial coolers are based on non-conventional semiconductors such as BiTe. In this paper we analyze the prospect of InP based material to fabricate coolers that can be integrated with optoelectronic components. Experimental results are shown where thermionic emission current in InGaAs/InGaAsP heterostructures is used to enhance the cooling power of conventional bulk material. About one degree cooling over 1 /spl mu/m thick barrier is observed (i.e. a cooling power of 200-300 W/cm/sup 2/). Calculations for InGaAs/InAlAs superlattices show that single stage cooling by as much as 20-30 degrees should be possible.

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Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)

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