1.3 /spl mu/m emission of TlGaP-LEDs grown on GaAs

Abstract

We investigate the growth of the new III-V semiconductor TlGaP on GaAs substrates. TlGaP is a very interesting material for a wide range of emission wavelengths. X-ray diffraction measurements indicate the growth of lattice-matched TlGaP on GaAs. The photoluminescence spectra show room-temperature emission at wavelengths around 1.3 /spl mu/m, which manifests good crystal quality. The electroluminescence spectrum of the first TlGaP LED is in good agreement with the photoluminescence measurements.