采用优化的衬垫和感受器布置改善了LP-MOVPE生长的InP/GaInAsP异质结构的均匀性

Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362) Pub Date : 1999-05-16 DOI:10.1109/ICIPRM.1999.773654

R. Westphalen, G. Landgren, B. Stalnacke, R. Beccard

{"title":"采用优化的衬垫和感受器布置改善了LP-MOVPE生长的InP/GaInAsP异质结构的均匀性","authors":"R. Westphalen, G. Landgren, B. Stalnacke, R. Beccard","doi":"10.1109/ICIPRM.1999.773654","DOIUrl":null,"url":null,"abstract":"Growth of distributed Bragg reflectors and strain compensated MQW for 1550 nm VCSEL have been investigated in a AIX 200/4 LP-MOVPE system with a 3/spl times/2\" wafer configuration using an improved liner and susceptor configuration. The shift in the stopband wavelength for DBR could be reduced by one order of magnitude down to +0.6% (+9 nm) within 40 mm diameter compared to the standard setup. For 1420 nm quaternary layers used in such DBR the area with a wavelength shift of less the 1 nm can nearly be doubled. In case of strain compensated MQW a similar improvement in wavelength homogeneity was observed, mainly due to reduced thickness variation from /spl plusmn/2.5% to /spl plusmn/0.8%.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Improved homogeneity of LP-MOVPE grown InP/GaInAsP heterostructure for DBR using an optimized liner and susceptor arrangement\",\"authors\":\"R. Westphalen, G. Landgren, B. Stalnacke, R. Beccard\",\"doi\":\"10.1109/ICIPRM.1999.773654\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Growth of distributed Bragg reflectors and strain compensated MQW for 1550 nm VCSEL have been investigated in a AIX 200/4 LP-MOVPE system with a 3/spl times/2\\\" wafer configuration using an improved liner and susceptor configuration. The shift in the stopband wavelength for DBR could be reduced by one order of magnitude down to +0.6% (+9 nm) within 40 mm diameter compared to the standard setup. For 1420 nm quaternary layers used in such DBR the area with a wavelength shift of less the 1 nm can nearly be doubled. In case of strain compensated MQW a similar improvement in wavelength homogeneity was observed, mainly due to reduced thickness variation from /spl plusmn/2.5% to /spl plusmn/0.8%.\",\"PeriodicalId\":213868,\"journal\":{\"name\":\"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)\",\"volume\":\"47 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-05-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1999.773654\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1999.773654","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

在AIX 200/4 LP-MOVPE系统中研究了1550 nm VCSEL的分布式Bragg反射镜和应变补偿MQW的生长，该系统采用改进的衬垫和电纳配置，晶圆配置为3/spl倍/2”。与标准设置相比，DBR阻带波长的位移可以在40 mm直径范围内降低一个数量级，降至+0.6% (+9 nm)。对于1420 nm的四元层，波长位移小于1 nm的面积几乎可以增加一倍。对于应变补偿的MQW，波长均匀性也有类似的改善，主要是由于厚度变化从/spl plusmn/2.5%减小到/spl plusmn/0.8%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Improved homogeneity of LP-MOVPE grown InP/GaInAsP heterostructure for DBR using an optimized liner and susceptor arrangement

Growth of distributed Bragg reflectors and strain compensated MQW for 1550 nm VCSEL have been investigated in a AIX 200/4 LP-MOVPE system with a 3/spl times/2" wafer configuration using an improved liner and susceptor configuration. The shift in the stopband wavelength for DBR could be reduced by one order of magnitude down to +0.6% (+9 nm) within 40 mm diameter compared to the standard setup. For 1420 nm quaternary layers used in such DBR the area with a wavelength shift of less the 1 nm can nearly be doubled. In case of strain compensated MQW a similar improvement in wavelength homogeneity was observed, mainly due to reduced thickness variation from /spl plusmn/2.5% to /spl plusmn/0.8%.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)

自引率

0.00%

发文量