190 GHz InP HEMT MMIC LNA with dry etched backside vias

Abstract

We report an InP HEMT MMIC LNA incorporating dry etched backside ground plane vias with an on-wafer measured peak gain of 9.6 dB at 190 GHz. The 2-stage balanced LNA exhibited over 7 dB gain across a 30 GHz bandwidth. The high gain and high operating frequency of the amplifier is attributed to the lower source inductance provided by the 25 /spl mu/m dry etched ground vias, the 80 nm T-gate, and the graded In/sub 0.80/Ga/sub 0.20/As channel HEMT.