50 GHz monolithically integrated InP/InGaAs PIN/HBT-receiver

Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362) Pub Date : 1999-05-16 DOI:10.1109/ICIPRM.1999.773765

D. Huber, M. Bitter, E. Gini, A. Neiger, T. Morf, C. Bergamaschi, H. Jackel

引用次数: 5

Abstract

We have designed and fabricated a monolithically integrated InP/InGaAs PIN/HBT-photoreceiver for a wavelength of /spl lambda/=1.55 /spl mu/m. The transimpedance amplifier achieves a gain of 44.6 dB/spl Omega/ 170 /spl Omega/, and the optical/electrical -3 dB-bandwidth of the entire receiver is 50 GHz, the largest bandwidth reported for any long-wavelength receiver OEIC.

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50ghz单片集成InP/InGaAs PIN/ hbt接收机

我们设计并制作了一个单片集成的InP/InGaAs PIN/ hbt光接收器，波长为/spl λ /=1.55 /spl mu/m。该跨阻放大器的增益为44.6 dB/spl Omega/ 170 /spl Omega/，整个接收机的光/电- 3db带宽为50 GHz，是所有长波接收机OEIC中报道的最大带宽。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)

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