ECR-MBE在1.1 /spl mu/m范围内的光抽运GaInNAs-DFB激光器

Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362) Pub Date : 1999-05-16 DOI:10.1109/ICIPRM.1999.773629

M. Reinhardt, M. Fischer, A. Forchel

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引用次数: 0

摘要

我们报道了在GaInNAs上的指数耦合1/sup / order DFB激光器的生长、制造和表征。采用固体源分子束外延和电子回旋共振源制氮可以获得良好的季铵盐层质量。在波导激光结构中嵌入GaInNAs量子阱进行了光学泵浦。激光模的倏逝场与脊波导上DFB光栅的有效折射率调制有强烈的耦合关系。在室温下得到了随光栅周期变化的单模发射峰。

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Optically pumped GaInNAs-DFB lasers in the 1.1 /spl mu/m range grown by ECR-MBE

We report on the growth, fabrication and characterization of index coupled 1/sup st/ order DFB lasers on GaInNAs. A good quaternary GaInNAs layer quality could be achieved by using solid source molecular beam epitaxy and an electron cyclotron resonance source for nitrogen generation. GaInNAs QW's embedded in a waveguide laser structure were pumped optically. The evanescent field of the laser mode couples strongly to the effective refractive index modulation of a DFB grating on top of the ridge waveguide. Monomode emission peaks depending on the grating period are obtained at room temperature.

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Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)

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