InGaAs/InP量子阱中激子的光学

Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362) Pub Date : 1999-05-16 DOI:10.1109/ICIPRM.1999.773746

J. Borgulová, B. Rheinlander, J. Kováè, F. Uherek, V. Gottschalch, G. Wagner, S. Nassauer, G. Benndorf, M. Gerhardt, J. Škriniarová, J. Jakabovie

{"title":"InGaAs/InP量子阱中激子的光学","authors":"J. Borgulová, B. Rheinlander, J. Kováè, F. Uherek, V. Gottschalch, G. Wagner, S. Nassauer, G. Benndorf, M. Gerhardt, J. Škriniarová, J. Jakabovie","doi":"10.1109/ICIPRM.1999.773746","DOIUrl":null,"url":null,"abstract":"We report on the analysis of the structures with In/sub 0.53/Ga/sub 0.47/As/InP quantum wells (QW) for use in tunable resonant cavity enhanced photodetectors operating at a wavelength of 1550 nm. The structures were prepared by low-pressure MOVPE. The optical properties were analysed by spectral ellipsometry, photoluminescence and photocurrent measurements. The excitonic transition energies are slightly shifted to lower values in comparison with theoretical model. This difference can be explained by the formation of InAs or InAsP monolayer at the interface between InGaAs QW and InP barrier. For the MQW PIN diode with 20 wells we measured a Stark shift of 20 meV at an applied electric field of 10 V/im.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"84 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Optics of excitons in InGaAs/InP quantum wells\",\"authors\":\"J. Borgulová, B. Rheinlander, J. Kováè, F. Uherek, V. Gottschalch, G. Wagner, S. Nassauer, G. Benndorf, M. Gerhardt, J. Škriniarová, J. Jakabovie\",\"doi\":\"10.1109/ICIPRM.1999.773746\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report on the analysis of the structures with In/sub 0.53/Ga/sub 0.47/As/InP quantum wells (QW) for use in tunable resonant cavity enhanced photodetectors operating at a wavelength of 1550 nm. The structures were prepared by low-pressure MOVPE. The optical properties were analysed by spectral ellipsometry, photoluminescence and photocurrent measurements. The excitonic transition energies are slightly shifted to lower values in comparison with theoretical model. This difference can be explained by the formation of InAs or InAsP monolayer at the interface between InGaAs QW and InP barrier. For the MQW PIN diode with 20 wells we measured a Stark shift of 20 meV at an applied electric field of 10 V/im.\",\"PeriodicalId\":213868,\"journal\":{\"name\":\"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)\",\"volume\":\"84 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-05-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1999.773746\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1999.773746","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本文报道了In/sub 0.53/Ga/sub 0.47/As/InP量子阱(QW)用于1550 nm波长可调谐谐振腔增强光电探测器的结构分析。采用低压MOVPE法制备结构。通过椭偏光谱、光致发光和光电流测量对其光学性质进行了分析。与理论模型相比，激子跃迁能略有降低。这种差异可以解释为在InGaAs QW和InP势垒之间的界面上形成了InAs或InAsP单层。对于具有20个阱的MQW PIN二极管，我们在10 V/im的外加电场下测量了20 meV的Stark位移。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Optics of excitons in InGaAs/InP quantum wells

We report on the analysis of the structures with In/sub 0.53/Ga/sub 0.47/As/InP quantum wells (QW) for use in tunable resonant cavity enhanced photodetectors operating at a wavelength of 1550 nm. The structures were prepared by low-pressure MOVPE. The optical properties were analysed by spectral ellipsometry, photoluminescence and photocurrent measurements. The excitonic transition energies are slightly shifted to lower values in comparison with theoretical model. This difference can be explained by the formation of InAs or InAsP monolayer at the interface between InGaAs QW and InP barrier. For the MQW PIN diode with 20 wells we measured a Stark shift of 20 meV at an applied electric field of 10 V/im.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)

自引率

0.00%

发文量