采用GaInAlAs/InP系统的首批全单片1.56 /spl mu/m vcsel的MOCVD生长评估

Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362) Pub Date : 1999-05-16 DOI:10.1109/ICIPRM.1999.773751

I. Sagnes, G. Le Roux, P. Legay, C. Kazmierski, J. Palmier, J. Debray

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引用次数: 0

摘要

使用InP晶格匹配的InGaAlAs/InAlAs系统，我们在单外延步骤中生长了第一个在InP衬底上的全单片垂直激光结构。利用质子注入定义的直径为45 /spl μ m的平面二极管，在+55/spl度/C下获得了1.56 /spl μ m的脉冲激光。利用法布里-珀罗腔波长位移计算了420 K/W底射激光器的热阻。所报道的特性表明了这种材料系统激光器在连续波操作和简单的大规模工业加工方面的潜力。

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MOCVD growth assessment of the first all monolithic 1.56 /spl mu/m VCSELs with GaInAlAs/InP system

Using an InP lattice matched InGaAlAs/InAlAs system we have grown in a single epitaxial step the first all-monolithic vertical laser structure on InP substrate. Pulse lasing at 1.56 /spl mu/m has been obtained up to +55/spl deg/C with 45 /spl mu/m diameter planar diodes defined by proton implantation. Thermal resistance of bottom emitting lasers about 420 K/W has been estimated from Fabry-Perot cavity wavelength shift. The reported characterizations indicate the potential of this material system laser for CW operation and for a simple large-scale industrial processing.

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Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)

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