MOCVD growth assessment of the first all monolithic 1.56 /spl mu/m VCSELs with GaInAlAs/InP system

Abstract

Using an InP lattice matched InGaAlAs/InAlAs system we have grown in a single epitaxial step the first all-monolithic vertical laser structure on InP substrate. Pulse lasing at 1.56 /spl mu/m has been obtained up to +55/spl deg/C with 45 /spl mu/m diameter planar diodes defined by proton implantation. Thermal resistance of bottom emitting lasers about 420 K/W has been estimated from Fabry-Perot cavity wavelength shift. The reported characterizations indicate the potential of this material system laser for CW operation and for a simple large-scale industrial processing.