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Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)最新文献

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Intraocular retinal prosthesis: microelectronics meets medicine 眼内视网膜假体:微电子学与医学的结合
Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468) Pub Date : 2001-10-31 DOI: 10.1109/IMNC.2001.984028
W. Liu
{"title":"Intraocular retinal prosthesis: microelectronics meets medicine","authors":"W. Liu","doi":"10.1109/IMNC.2001.984028","DOIUrl":"https://doi.org/10.1109/IMNC.2001.984028","url":null,"abstract":"Retinitis Pigmentosa (RP) and Age-Related Macula Degeneration (AMD) are incurable retinal diseases that result in profound vision loss due to degeneration of the light sensing photoreceptor cells. Retinitis pigmentosa has an incidence of I in 4000 live births, whereas, 200,000 eyes are blinded each year by age related macular degeneration. Since the late 1980's, medical doctors and scientists at the Doheny Eye Institute/University of Southern California (formerly at Johns Hopkins University) and engineers at North Carolina State University have been investigating the possibility of restoring sight to this subset of blind patients by developing an electronic retinal implant. As shown in a figure, the prototyping implant (Multiple Artificial Retina Chip Set or MARC) will replace the functionality of photoreceptor layer by directly providing electrical stimulation to the surviving neurons of the retina. Thus, by capturing light and electrically stimulating the next layers of neurons in the visual pathway (i.e. the bipolar and/or ganglion cell layer of the retina), useful sight to the blind affected by retinal diseases such as RP and AMD can be restored. Patients afflicted with RP or AMD would be the largest groups to benefit from such a biomedical advance.","PeriodicalId":202620,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)","volume":"123 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124227436","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Suppress copper diffusion through barrier metal-free structure by using ion implantation into low-k material 利用离子注入低k材料抑制铜在无金属屏障结构中的扩散
Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468) Pub Date : 2001-10-31 DOI: 10.1109/IMNC.2001.984118
I. Deng
{"title":"Suppress copper diffusion through barrier metal-free structure by using ion implantation into low-k material","authors":"I. Deng","doi":"10.1109/IMNC.2001.984118","DOIUrl":"https://doi.org/10.1109/IMNC.2001.984118","url":null,"abstract":"Currently, Cu and spin on organic polymers (SOP) are leading candidates for ULSI interconnect technology. Devices integrated with low-k materials and Cu films are capable of improved performance. Methyl silsesquioxane (MSQ), a spin-on material with low dielectric constant, can successfully suppress Cu diffusion without using barrier metal through implantation of nitrogen into the low dielectric constant material. A MOS capacitor structure, studied in this work, shows better barrier capability and lower leakage current after co-implanting nitrogen and fluorine into the low dielectric material. In our work, we successfully control the MSQ film's dielectric constant and its leakage current by ion implantation, providing a good way to integrate low dielectric constant materials and copper in the same devices. Not only we do not need to deposit an extra barrier layer to prevent Cu penetration, but the dielectric constant is also reduced at the same time. More detailed experiments and electrical measurements are continuing.","PeriodicalId":202620,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133678357","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Patterned deposition of metallic nanoclusters from solution using synchrotron radiation 用同步辐射在溶液中沉积金属纳米团簇
Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468) Pub Date : 2001-10-31 DOI: 10.1109/IMNC.2001.984147
R. Divan, D. Mancini, N. Moldovan, L. Assoufid, Y. Chu, Q. Ma, R. Rosenberg
{"title":"Patterned deposition of metallic nanoclusters from solution using synchrotron radiation","authors":"R. Divan, D. Mancini, N. Moldovan, L. Assoufid, Y. Chu, Q. Ma, R. Rosenberg","doi":"10.1109/IMNC.2001.984147","DOIUrl":"https://doi.org/10.1109/IMNC.2001.984147","url":null,"abstract":"High-energy x-rays produced by synchrotron radiation sources can induce nanocrystalline metallic deposition from a metal-salt solution onto an insulator. We have investigated patterned deposition of metallic nanoclusters on a silicon dioxide surface. The regularity of the deposited nanostructures and the surface morphology of the films depend on the incident x-ray dose. Most of the deposits were composed of spherical nanoparticles. Atomic force microscope (AFM) measurements suggest an average lateral grain size of about 150 nm. Energy dispersion x-ray (EDX) analysis shows that the x-ray-deposited gold is pure.","PeriodicalId":202620,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133944034","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Nanostructure construction in single-walled carbon nanotubes by AFM manipulation 单壁碳纳米管的原子力显微镜结构构建
Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468) Pub Date : 2001-10-31 DOI: 10.1109/IMNC.2001.984141
T. Shiokawa, K. Tsukagoshi, K. Ishibashi, Y. Aoyagi
{"title":"Nanostructure construction in single-walled carbon nanotubes by AFM manipulation","authors":"T. Shiokawa, K. Tsukagoshi, K. Ishibashi, Y. Aoyagi","doi":"10.1109/IMNC.2001.984141","DOIUrl":"https://doi.org/10.1109/IMNC.2001.984141","url":null,"abstract":"We report nanostructure construction of two-crossing SWNTs fabricated by AFM manipulation. SWNTs used for this study were dissolved in water with the liquid surfactant TRITON/sup R/. The solution was dispersed on a Si substrate, and dipped into dichloroethane to clean up the surface of the SWNTs. Visualization and manipulation were performed in air using a noncontact AFM.","PeriodicalId":202620,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132646777","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 20
Simulation parameter effects on critical dimension and sensitivity of 193 nm Chemically Amplified Resist 模拟参数对193nm化学放大阻片临界尺寸和灵敏度的影响
Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468) Pub Date : 2001-10-31 DOI: 10.1109/IMNC.2001.984172
Sang-Kon Kim, D. Sohn, Eungsung Seo, Jin-Young Kim, Y. Sohn, Hye-keun Oh
{"title":"Simulation parameter effects on critical dimension and sensitivity of 193 nm Chemically Amplified Resist","authors":"Sang-Kon Kim, D. Sohn, Eungsung Seo, Jin-Young Kim, Y. Sohn, Hye-keun Oh","doi":"10.1109/IMNC.2001.984172","DOIUrl":"https://doi.org/10.1109/IMNC.2001.984172","url":null,"abstract":"It is helpful in lithography process and developing resist to know the relationship between the critical dimension variation and simulation parameters such as aerial image parameters, the Dill exposure parameters, PEB (Post Exposure Bake) parameters, and development parameters. In this paper the profiles of a 193 nm CAR (Chemically Amplified Resist) were simulated with those various parameter, and those results were analyzed by the response surface methodology (RSM) approach to know the influence of independent factors on a dependent response and to optimize each process. Both the parameter effects of each process and the simulation process effects of the whole process were described about critical dimension and side wall angle so that the sensitivity of lithography process could be assumed. The development parameters were modified with those of flood exposure experiment according to the pattern density and pattern size for more accurate lithography simulation. Also those effects on critical dimension and side wall angle were analyzed. For the validity of our results the quantitative comparison between our results and those of a commercial tool was shown.","PeriodicalId":202620,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129064512","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Influence of substrate roughness on the formation of self-assembled monolayers (SAM) on Silicon [100] 衬底粗糙度对硅表面自组装单层(SAM)形成的影响[100]
Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468) Pub Date : 2001-10-31 DOI: 10.1109/IMNC.2001.984148
S. Moré, H. Graaf, Y. Nonogaki, T. Urisu
{"title":"Influence of substrate roughness on the formation of self-assembled monolayers (SAM) on Silicon [100]","authors":"S. Moré, H. Graaf, Y. Nonogaki, T. Urisu","doi":"10.1109/IMNC.2001.984148","DOIUrl":"https://doi.org/10.1109/IMNC.2001.984148","url":null,"abstract":"We have investigated the relationship between surface roughness and morphology and the formation of self-assembled monolayers (SAM). Rough surfaces were prepared by abrading polished Si[100] wafers with SiC paper. Dodecan (-C/sub 12/H/sub 25/) SAM were prepared by refluxing the samples in a 30% dodecene solution in mesithylene. The FTIR spectra of these samples were analyzed with respect to the CH/sub 2/- and CH/sub 3/- peak positions, peak intensities and peak widths.","PeriodicalId":202620,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115392550","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A study of 157 nm resist design by using highly precise theoretical calculation of absorption spectra 利用高精度吸收光谱理论计算研究157 nm抗蚀剂设计
Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468) Pub Date : 2001-10-31 DOI: 10.1109/IMNC.2001.984213
T. Yamazaki, T. Itani
{"title":"A study of 157 nm resist design by using highly precise theoretical calculation of absorption spectra","authors":"T. Yamazaki, T. Itani","doi":"10.1109/IMNC.2001.984213","DOIUrl":"https://doi.org/10.1109/IMNC.2001.984213","url":null,"abstract":"Vacuum ultraviolet (VUV) absorption spectra of resist materials for 157 nm lithography were calculated theoretically by symmetry adapted cluster configuration interaction (SAC-CI) method. We have investigated several saturated hydrocarbons. It was found that SAC-CI calculations are quite close to the experimental values of absorption peak positions, and it has enough precision qualitatively to compare the absorption coefficient among different molecules. High precision prediction enables exact assignment of an absorption spectrum. It was found that SAC-CI calculation is very useful for the development of resist polymers and other component for 157 nm resists.","PeriodicalId":202620,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130055812","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Nano chamber fabrication on an acrylic plate by direct nano imprint lithography using quartz mold 用石英模直接纳米压印在亚克力板上制造纳米室
Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468) Pub Date : 2001-10-31 DOI: 10.1109/IMNC.2001.984110
Y. Hirai, N. Takagi, H. Toyota, S. Harada, T. Yotsuya, Y. Tanaka
{"title":"Nano chamber fabrication on an acrylic plate by direct nano imprint lithography using quartz mold","authors":"Y. Hirai, N. Takagi, H. Toyota, S. Harada, T. Yotsuya, Y. Tanaka","doi":"10.1109/IMNC.2001.984110","DOIUrl":"https://doi.org/10.1109/IMNC.2001.984110","url":null,"abstract":"Nano-imprint lithography (S.Chou et al, J. Vac. Sci. Technol. vol. B14, p. 4129-4133, 1996) is a promising technology for nano structure fabrication with low cost. Several applications have been reported, whose targets are mainly fabrication of Si ULSI or other electric devices. In this work, we demonstrate nano holes fabrication on an acrylic plate using a quartz mold. The imprinted patterns could be applied to nano chambers for DNA analysis or anti-reflection structures for diffractive optical elements.","PeriodicalId":202620,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132212931","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Monolithic integration of Si field emitter arrays with n-MOSFET circuits Si场发射极阵列与n-MOSFET电路的单片集成
Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468) Pub Date : 2001-10-31 DOI: 10.1109/IMNC.2001.984189
M. Nagao, S. Kanemaru, Y. Tamura, K. Tokunaga, T. Matsukawa, J. Itoh
{"title":"Monolithic integration of Si field emitter arrays with n-MOSFET circuits","authors":"M. Nagao, S. Kanemaru, Y. Tamura, K. Tokunaga, T. Matsukawa, J. Itoh","doi":"10.1109/IMNC.2001.984189","DOIUrl":"https://doi.org/10.1109/IMNC.2001.984189","url":null,"abstract":"To improve the stability and the uniformity of emission currents, we have proposed and fabricated a current-controllable silicon field emitter incorporating a metal-oxide -semiconductor field-effect transistor structure (a MOSFET-structured silicon field emitter). In this device, a built-in MOSFET can control the supply of electrons to the field emitters to stabilize the emission current. The MOSFET-structured emitter is highly compatible with n-MOSFET LSIs in the fabrication processes. Therefore, it is possible to integrate the MOSFET-structured emitter with a driving circuit. We have integrated the Si MOSFET-FEA with n-MOSFET circuits monolithically based on the n-MOSFET process.","PeriodicalId":202620,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134023722","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A study of line edge roughness in chemically amplified resist for low energy electron-beam lithography 低能电子束光刻中化学放大抗蚀剂线边缘粗糙度的研究
Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468) Pub Date : 2001-10-31 DOI: 10.1109/IMNC.2001.984209
T. Nakasugi, A. Ando, R. Inanami, N. Sasaki, K. Sugihara
{"title":"A study of line edge roughness in chemically amplified resist for low energy electron-beam lithography","authors":"T. Nakasugi, A. Ando, R. Inanami, N. Sasaki, K. Sugihara","doi":"10.1109/IMNC.2001.984209","DOIUrl":"https://doi.org/10.1109/IMNC.2001.984209","url":null,"abstract":"We investigated the line edge roughness (LER) of the resist pattern in a high sensitivity resist process using low energy e-beam lithography (LEEBL). In order to explain the experimental results, we have proposed a model considering the secondary electron (SE) yield and the diffusion of SE. The results of simulation based on the proposed model indicated the following: (1) in the case of 2 keV, acceptable acid distribution is generated due to the high SE yield and the SE diffusion. As a result, a high quality resist pattern could be obtained, even if the exposure dose is below 0.5 /spl mu/C/cm/sup 2/, and (2) in the case of 50 keV, the acid generated at the unexposed area due to the proximity effect make the LER larger. Our simulation indicated that the LER of the 2 keV exposure with 0.4 /spl mu/C/cm/sup 2/ is smaller than that of the 50 keV exposure with 2 /spl mu/C/cm/sup 2/ 2. From these results, we think that high sensitivity resist process at the exposure dose below 0.5 /spl mu/C/cm/sup 2/ can be achieved in LEEBL.","PeriodicalId":202620,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133750829","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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