衬底粗糙度对硅表面自组装单层(SAM)形成的影响[100]

Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468) Pub Date : 2001-10-31 DOI:10.1109/IMNC.2001.984148

S. Moré, H. Graaf, Y. Nonogaki, T. Urisu

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引用次数: 1

摘要

我们研究了表面粗糙度和形貌与自组装单层膜(SAM)形成之间的关系。用SiC纸研磨抛光后的Si[100]晶圆，制备粗糙表面。将样品在30%的十二烷亚甲基溶液中回流制备了十二烷(-C/sub - 12/H/sub - 25/) SAM。对样品的红外光谱进行了CH/sub 2/-和CH/sub 3/-峰位置、峰强度和峰宽度的分析。

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Influence of substrate roughness on the formation of self-assembled monolayers (SAM) on Silicon [100]

We have investigated the relationship between surface roughness and morphology and the formation of self-assembled monolayers (SAM). Rough surfaces were prepared by abrading polished Si[100] wafers with SiC paper. Dodecan (-C/sub 12/H/sub 25/) SAM were prepared by refluxing the samples in a 30% dodecene solution in mesithylene. The FTIR spectra of these samples were analyzed with respect to the CH/sub 2/- and CH/sub 3/- peak positions, peak intensities and peak widths.

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Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)

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