A study of 157 nm resist design by using highly precise theoretical calculation of absorption spectra

Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468) Pub Date : 2001-10-31 DOI:10.1109/IMNC.2001.984213

T. Yamazaki, T. Itani

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Abstract

Vacuum ultraviolet (VUV) absorption spectra of resist materials for 157 nm lithography were calculated theoretically by symmetry adapted cluster configuration interaction (SAC-CI) method. We have investigated several saturated hydrocarbons. It was found that SAC-CI calculations are quite close to the experimental values of absorption peak positions, and it has enough precision qualitatively to compare the absorption coefficient among different molecules. High precision prediction enables exact assignment of an absorption spectrum. It was found that SAC-CI calculation is very useful for the development of resist polymers and other component for 157 nm resists.

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利用高精度吸收光谱理论计算研究157 nm抗蚀剂设计

采用对称自适应簇构型相互作用(SAC-CI)理论计算了157nm光刻用抗蚀剂材料的真空紫外吸收光谱。我们已经研究了几种饱和碳氢化合物。结果表明，SAC-CI计算结果与吸收峰位置的实验值非常接近，定性比较不同分子间的吸收系数具有足够的精度。高精度的预测可以精确地分配吸收光谱。研究发现，SAC-CI计算对157nm耐蚀剂的抗蚀剂聚合物和其他成分的开发非常有用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)

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