A study of line edge roughness in chemically amplified resist for low energy electron-beam lithography

Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468) Pub Date : 2001-10-31 DOI:10.1109/IMNC.2001.984209

T. Nakasugi, A. Ando, R. Inanami, N. Sasaki, K. Sugihara

{"title":"A study of line edge roughness in chemically amplified resist for low energy electron-beam lithography","authors":"T. Nakasugi, A. Ando, R. Inanami, N. Sasaki, K. Sugihara","doi":"10.1109/IMNC.2001.984209","DOIUrl":null,"url":null,"abstract":"We investigated the line edge roughness (LER) of the resist pattern in a high sensitivity resist process using low energy e-beam lithography (LEEBL). In order to explain the experimental results, we have proposed a model considering the secondary electron (SE) yield and the diffusion of SE. The results of simulation based on the proposed model indicated the following: (1) in the case of 2 keV, acceptable acid distribution is generated due to the high SE yield and the SE diffusion. As a result, a high quality resist pattern could be obtained, even if the exposure dose is below 0.5 /spl mu/C/cm/sup 2/, and (2) in the case of 50 keV, the acid generated at the unexposed area due to the proximity effect make the LER larger. Our simulation indicated that the LER of the 2 keV exposure with 0.4 /spl mu/C/cm/sup 2/ is smaller than that of the 50 keV exposure with 2 /spl mu/C/cm/sup 2/ 2. From these results, we think that high sensitivity resist process at the exposure dose below 0.5 /spl mu/C/cm/sup 2/ can be achieved in LEEBL.","PeriodicalId":202620,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)","volume":"63 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMNC.2001.984209","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

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Abstract

We investigated the line edge roughness (LER) of the resist pattern in a high sensitivity resist process using low energy e-beam lithography (LEEBL). In order to explain the experimental results, we have proposed a model considering the secondary electron (SE) yield and the diffusion of SE. The results of simulation based on the proposed model indicated the following: (1) in the case of 2 keV, acceptable acid distribution is generated due to the high SE yield and the SE diffusion. As a result, a high quality resist pattern could be obtained, even if the exposure dose is below 0.5 /spl mu/C/cm/sup 2/, and (2) in the case of 50 keV, the acid generated at the unexposed area due to the proximity effect make the LER larger. Our simulation indicated that the LER of the 2 keV exposure with 0.4 /spl mu/C/cm/sup 2/ is smaller than that of the 50 keV exposure with 2 /spl mu/C/cm/sup 2/ 2. From these results, we think that high sensitivity resist process at the exposure dose below 0.5 /spl mu/C/cm/sup 2/ can be achieved in LEEBL.

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低能电子束光刻中化学放大抗蚀剂线边缘粗糙度的研究

利用低能电子束光刻技术(LEEBL)研究了高灵敏度光刻工艺中光刻图案的线边缘粗糙度(LER)。为了解释实验结果，我们提出了一个考虑二次电子(SE)产率和SE扩散的模型。基于该模型的模拟结果表明:(1)在2 keV的情况下，由于SE产率高和SE扩散，产生了可接受的酸分布。结果表明，即使暴露剂量低于0.5 /spl mu/C/cm/sup 2/，也能获得高质量的抗蚀图案;(2)在50 keV的情况下，由于邻近效应，未暴露区域产生的酸使LER变大。模拟结果表明，在0.4 /spl μ /C/cm/sup 2/下，2 keV暴露时的LER小于50 keV暴露时的LER。综上所述，我们认为LEEBL在0.5 /spl μ /C/cm/sup 2/以下的暴露剂量下可以实现高灵敏度抗蚀过程。

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Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)

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