Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)最新文献

筛选
英文 中文
Development of high performance immunoassay system using multichannel microchip 多通道微芯片高效免疫分析系统的研制
M. Yamanaka, K. Sato, M. Tokeshi, H. Katou, H. Kimura, T. Kitamori
{"title":"Development of high performance immunoassay system using multichannel microchip","authors":"M. Yamanaka, K. Sato, M. Tokeshi, H. Katou, H. Kimura, T. Kitamori","doi":"10.1109/IMNC.2001.984049","DOIUrl":"https://doi.org/10.1109/IMNC.2001.984049","url":null,"abstract":"Immunoassay is known as one of the most important analytical methods and widely used in clinical diagnoses and biochemical studies. The conventional immunoassay, however, requires a long assay time. We developed a bead-bed immunoassay system integrated on a microchip which successfully reduces the assay time from 2 days to 30 minutes using simple operations for assay (Sato et al, 2000 and 2001). Here, aiming at high throughput assay, an integrated immunoassay system using a multichannel microchip was developed for simultaneous analyses of multiple samples.","PeriodicalId":202620,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129130413","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Synthesis of microcrystalline silicon thin films using a low-pressure microwave plasma 用低压微波等离子体合成微晶硅薄膜
D. Kikukawa, K. Honma, M. Hori, T. Goto
{"title":"Synthesis of microcrystalline silicon thin films using a low-pressure microwave plasma","authors":"D. Kikukawa, K. Honma, M. Hori, T. Goto","doi":"10.1109/IMNC.2001.984116","DOIUrl":"https://doi.org/10.1109/IMNC.2001.984116","url":null,"abstract":"Microwave plasma (MWP) has been used for the formation of microcrystalline silicon (/spl mu/c-Si:H) thin films since MWP has low electron temperatures, -2.4 eV, and high electron densities, /spl sim/10/sup 10/ cm/sup -3/ (Shirai et al, Jpn. J. Appl. Phys. vol. 37, p. L1078, 1998). Generally in the MWP system, the plasma is not generated stably at a low pressure. In this study, we have developed a new MWP source operating at low pressure. The low pressure MWP will enable us to form the /spl mu/c-Si:H film over a large area. We have investigated the growth of /spl mu/c-Si:H thin films and the effect of dilution gases such as Ar and Xe on film properties at low pressure in SiH/sub 4/-H/sub 2/ MWP. The crystallinity of films was investigated by Raman spectroscopy and X-ray diffraction (XRD). The absolute density of H atoms was evaluated by vacuum ultraviolet absorption spectroscopy (VUVAS). The time-evolution spectra of chemical bonds in the initial film were obtained by in-situ Fourier transform infrared spectroscopy attenuated total reflection (FT-IR ATR).","PeriodicalId":202620,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124420392","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Structure and resonant characteristics of amorphous carbon pillars grown by FIB-CVD FIB-CVD生长非晶碳柱的结构和谐振特性
J. Fujita, M. Ishida, T. Ichihashi, T. Sakamoto, Y. Ochiai, T. Kaito, S. Matsui
{"title":"Structure and resonant characteristics of amorphous carbon pillars grown by FIB-CVD","authors":"J. Fujita, M. Ishida, T. Ichihashi, T. Sakamoto, Y. Ochiai, T. Kaito, S. Matsui","doi":"10.1109/IMNC.2001.984200","DOIUrl":"https://doi.org/10.1109/IMNC.2001.984200","url":null,"abstract":"Beam induced deposition is a superior technique for nano-fabrication and nano-mechanics that allows many degrees of freedom, so that any shape can be grown at any position with nanometer accuracy. We have already reported the three-dimensional growth of amorphous carbon, having a nanostructure of wineglass, coils, and bellows, using precursor of phenanthrene gas and a focused Ga+ ion beam (FIB) induced chemical vapor deposition (CVD). High-precision Ga-ion beams controlled by highly stabilized ion optics in an FIB system (SM15020, SEIKO Instruments) enabled not only normal growth of carbon nano-pillars on substrate, but also lateral growth. In this paper, we report an evaluation of the Young's modulus of such amorphous carbon pillars by measuring the resonant frequency of pillars Many improvements are needed in our experimental conditions to clearly define the growth condition. However, the very large Young's modulus and the flexibility of the nano-structure fabrication in FIB-CVD holds great possibility for future applications of these DLC pillars grown by FIB-CVD.","PeriodicalId":202620,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)","volume":"474 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114893429","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fourier analysis of line-edge roughness in calixarene fine patterns 杯芳烃精细图案线边缘粗糙度的傅立叶分析
M. Ishida, J. Fujita, Y. Ochiai, H. Yamamoto, S. Touno
{"title":"Fourier analysis of line-edge roughness in calixarene fine patterns","authors":"M. Ishida, J. Fujita, Y. Ochiai, H. Yamamoto, S. Touno","doi":"10.1109/IMNC.2001.984196","DOIUrl":"https://doi.org/10.1109/IMNC.2001.984196","url":null,"abstract":"Quantitative evaluation of line-edge roughness (LER) on nano-scale resist patterns is indispensable in clarifying the origin of LER and in refining nanofabrication. We developed an algorithm for the quantitative analysis of LER that can elicit an edge profile from a scanning electron micrograph by fitting a Gaussian curve to an intensity profile across the edge. We also calculated the power spectrum of the edge profile using fast Fourier transformation (FFT). Because of the wide latitude of digital micrographs, conditions of SEM image acquisition, such as the brightness, contrast, or focus, had little influence on the LER spectrum. We examined four types of negative electron beam (EB) resists with methyl-acetoxy calix[n]arenes.","PeriodicalId":202620,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132970970","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
"Actinic-only" defects in EUVL mask blanks-native defects, barely detectable by visible-light inspection EUVL掩模衬布中的“仅光化”缺陷——原生缺陷,几乎无法通过可见光检查检测到
M. Yi, T. Haga, C. Walton, J. Bokor
{"title":"\"Actinic-only\" defects in EUVL mask blanks-native defects, barely detectable by visible-light inspection","authors":"M. Yi, T. Haga, C. Walton, J. Bokor","doi":"10.1109/IMNC.2001.984102","DOIUrl":"https://doi.org/10.1109/IMNC.2001.984102","url":null,"abstract":"An actinic (at-wavelength) inspection technology is essential for learning the nature of defects at the developmental stage of the technology and for eventually qualifying less costly non-EUV inspection methods. In this paper, we discuss recent results of actinic defect counting experiments covering several cm/sup 2/ area. Results include some small actinic-only defects, not detected by optical inspection tools, and a new class of relatively large, absorbing defects.","PeriodicalId":202620,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128864079","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electrical transport properties of poly(G)-poly(C) DNA molecules 聚(G)-聚(C) DNA分子的电输运性质
J. Hwang, G.S. Lee, K. J. Kong, D. Ahn, S. Hwang, D. Ahn
{"title":"Electrical transport properties of poly(G)-poly(C) DNA molecules","authors":"J. Hwang, G.S. Lee, K. J. Kong, D. Ahn, S. Hwang, D. Ahn","doi":"10.1109/IMNC.2001.984207","DOIUrl":"https://doi.org/10.1109/IMNC.2001.984207","url":null,"abstract":"Electrical transport through DNA molecules is of fundamental interest and could have an impact on nanoscale device applications such as molecular electronics. A few interesting transport data have been reported in the last couple of years, but the transport mechanism through DNA molecules is less understood. We report direct measurements of electrical conduction through 60 base pairs of poly(G)-poly(C) DNA molecules (20.7 nm long) connected in between two metal electrodes with nanometer spacing.","PeriodicalId":202620,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116968235","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effects of LDD spacer etches on spacer widths, subsequent oxide growths and yield enhancement LDD间隔片蚀刻对间隔片宽度、随后的氧化物生长和收率提高的影响
K. Rho
{"title":"Effects of LDD spacer etches on spacer widths, subsequent oxide growths and yield enhancement","authors":"K. Rho","doi":"10.1109/IMNC.2001.984164","DOIUrl":"https://doi.org/10.1109/IMNC.2001.984164","url":null,"abstract":"The lightly-doped drain (LDD) spacer has been used extensively in conventional CMOS processing, which leads to less hot carrier degradation. For the formation of LDD spacers, a certain thickness of TEOS layer is deposited and then a blanket etch is performed using an endpoint algorithm. However, as device sizes shrink (e.g. gate length and active area), it is important that spacers should not overlap, as this will result in improper source/drain and contact openings. The effects of LDD spacer etches have been investigated for spacer width control, subsequent oxide growths and yield enhancement.","PeriodicalId":202620,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)","volume":"334 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123396087","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Microfabricated electrical connector for AFM probes with integrated sensor/actuator 用于集成传感器/执行器的AFM探针的微制造电连接器
T. Akiyama, U. Staufer, N. D. de Rooij
{"title":"Microfabricated electrical connector for AFM probes with integrated sensor/actuator","authors":"T. Akiyama, U. Staufer, N. D. de Rooij","doi":"10.1109/IMNC.2001.984064","DOIUrl":"https://doi.org/10.1109/IMNC.2001.984064","url":null,"abstract":"Demonstrates a microfabricated electrical connector for AFM probes which would otherwise require wire-bonded contacts for operation, e.g. for reading piezoresistive, or capacitive sensors, or driving piezoelectric deflection actuators. Considering the relatively short life time of AFM cantilevers, compared to other kinds of sensors like pressure sensors, it is a time consuming effort to glue them on small printed circuit boards (PCB) and contacting them by wire bonding. A simple \"plug-in\" socket, or connector, would be highly desirable. There are already commercial AFM instruments which exclusively uses piezoresistive cantilevers (e.g. Nanopics 1000, SEIKO instruments, Japan). This fact is proof for the need of such connectors and has strongly encouraged the authors to pursue this study.","PeriodicalId":202620,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130562507","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low dielectric constant SILK films as bottom antireflective coating layers for both KrF and ArF lithography 低介电常数SILK薄膜作为KrF和ArF光刻的底部抗反射涂层
H. Chen, F. Ko, T. Chu, H.C. Cheng, T. Huang
{"title":"Low dielectric constant SILK films as bottom antireflective coating layers for both KrF and ArF lithography","authors":"H. Chen, F. Ko, T. Chu, H.C. Cheng, T. Huang","doi":"10.1109/IMNC.2001.984124","DOIUrl":"https://doi.org/10.1109/IMNC.2001.984124","url":null,"abstract":"For advanced lithography processes, a BARC layer for patterning low dielectric materials is essential. Here we demonstrate new bottom antireflective coating (BARC) materials for both KrF and ArF lithography. The antireflective layer is composed of a low dielectric constant material SILK and its etching hard mask layer, such as an oxide or nitride film. The SILK is a commercial low dielectric material, which shows good etching and electrical characteristics. We report optical constants of the SILK film in the ultraviolet spectral region.","PeriodicalId":202620,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)","volume":"38 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130586904","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Microbubble actuators - an introduction to microscale thermal fluid engineering 微泡致动器-微尺度热流体工程导论
K. Takahashi
{"title":"Microbubble actuators - an introduction to microscale thermal fluid engineering","authors":"K. Takahashi","doi":"10.1109/IMNC.2001.984063","DOIUrl":"https://doi.org/10.1109/IMNC.2001.984063","url":null,"abstract":"Liquid-gas interface often appears in the microfluidic systems due to dissolved and residual gas or thermally generated vapor. Thermal expansion of bubble is the most famous way to control this interface and is used as the micro pumping engine in the thermal ink-jet printer. On the other hand, thermocapillary force of droplet is successfully applied in the micro optical switch. This force is based on the controllability of surface tension that depends on temperature. In thermal fluid engineering, a similar phenomena appears on bubbles and liquid surfaces in temperature or concentration gradient and is known generally as Marangoni effect. The contemporary microfabrication technique enables us to fabricate a microheater tiny enough to control temperature quickly and precisely in micro length scale. Consequently the Marangoni effect or thermocapillary force on microbubbles can be managed artificially and the microbubble of the order of hundreds micrometers can be driven without any movable part. Novel actuators using microbubble and their microfluidic mechanisms are explained.","PeriodicalId":202620,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115131149","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信