{"title":"\"Actinic-only\" defects in EUVL mask blanks-native defects, barely detectable by visible-light inspection","authors":"M. Yi, T. Haga, C. Walton, J. Bokor","doi":"10.1109/IMNC.2001.984102","DOIUrl":null,"url":null,"abstract":"An actinic (at-wavelength) inspection technology is essential for learning the nature of defects at the developmental stage of the technology and for eventually qualifying less costly non-EUV inspection methods. In this paper, we discuss recent results of actinic defect counting experiments covering several cm/sup 2/ area. Results include some small actinic-only defects, not detected by optical inspection tools, and a new class of relatively large, absorbing defects.","PeriodicalId":202620,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMNC.2001.984102","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
An actinic (at-wavelength) inspection technology is essential for learning the nature of defects at the developmental stage of the technology and for eventually qualifying less costly non-EUV inspection methods. In this paper, we discuss recent results of actinic defect counting experiments covering several cm/sup 2/ area. Results include some small actinic-only defects, not detected by optical inspection tools, and a new class of relatively large, absorbing defects.