Synthesis of microcrystalline silicon thin films using a low-pressure microwave plasma

Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468) Pub Date : 2001-10-31 DOI:10.1109/IMNC.2001.984116

D. Kikukawa, K. Honma, M. Hori, T. Goto

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Abstract

Microwave plasma (MWP) has been used for the formation of microcrystalline silicon (/spl mu/c-Si:H) thin films since MWP has low electron temperatures, -2.4 eV, and high electron densities, /spl sim/10/sup 10/ cm/sup -3/ (Shirai et al, Jpn. J. Appl. Phys. vol. 37, p. L1078, 1998). Generally in the MWP system, the plasma is not generated stably at a low pressure. In this study, we have developed a new MWP source operating at low pressure. The low pressure MWP will enable us to form the /spl mu/c-Si:H film over a large area. We have investigated the growth of /spl mu/c-Si:H thin films and the effect of dilution gases such as Ar and Xe on film properties at low pressure in SiH/sub 4/-H/sub 2/ MWP. The crystallinity of films was investigated by Raman spectroscopy and X-ray diffraction (XRD). The absolute density of H atoms was evaluated by vacuum ultraviolet absorption spectroscopy (VUVAS). The time-evolution spectra of chemical bonds in the initial film were obtained by in-situ Fourier transform infrared spectroscopy attenuated total reflection (FT-IR ATR).

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用低压微波等离子体合成微晶硅薄膜

微波等离子体(MWP)具有电子温度低(-2.4 eV)和电子密度高(/spl sim/10/sup 10/ cm/sup -3/)的特点，已被用于制备微晶硅(/spl mu/c-Si:H)薄膜(Shirai等，Jpn)。j:。理论物理。第37卷，第1078页，1998年)。通常在MWP系统中，等离子体在低压下不能稳定地产生。在这项研究中，我们开发了一种新的低压MWP源。低压MWP将使我们能够在大面积上形成/spl μ /c-Si:H薄膜。我们研究了/spl mu/c-Si:H薄膜在SiH/sub - 4/-H/sub - 2/ MWP中低压下的生长，以及Ar和Xe等稀释气体对薄膜性能的影响。利用拉曼光谱和x射线衍射(XRD)研究了薄膜的结晶度。用真空紫外吸收光谱(VUVAS)测定了H原子的绝对密度。利用原位傅里叶变换红外光谱衰减全反射(FT-IR ATR)获得了初始膜中化学键的时间演化光谱。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)

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