Si场发射极阵列与n-MOSFET电路的单片集成

Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468) Pub Date : 2001-10-31 DOI:10.1109/IMNC.2001.984189

M. Nagao, S. Kanemaru, Y. Tamura, K. Tokunaga, T. Matsukawa, J. Itoh

{"title":"Si场发射极阵列与n-MOSFET电路的单片集成","authors":"M. Nagao, S. Kanemaru, Y. Tamura, K. Tokunaga, T. Matsukawa, J. Itoh","doi":"10.1109/IMNC.2001.984189","DOIUrl":null,"url":null,"abstract":"To improve the stability and the uniformity of emission currents, we have proposed and fabricated a current-controllable silicon field emitter incorporating a metal-oxide -semiconductor field-effect transistor structure (a MOSFET-structured silicon field emitter). In this device, a built-in MOSFET can control the supply of electrons to the field emitters to stabilize the emission current. The MOSFET-structured emitter is highly compatible with n-MOSFET LSIs in the fabrication processes. Therefore, it is possible to integrate the MOSFET-structured emitter with a driving circuit. We have integrated the Si MOSFET-FEA with n-MOSFET circuits monolithically based on the n-MOSFET process.","PeriodicalId":202620,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Monolithic integration of Si field emitter arrays with n-MOSFET circuits\",\"authors\":\"M. Nagao, S. Kanemaru, Y. Tamura, K. Tokunaga, T. Matsukawa, J. Itoh\",\"doi\":\"10.1109/IMNC.2001.984189\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"To improve the stability and the uniformity of emission currents, we have proposed and fabricated a current-controllable silicon field emitter incorporating a metal-oxide -semiconductor field-effect transistor structure (a MOSFET-structured silicon field emitter). In this device, a built-in MOSFET can control the supply of electrons to the field emitters to stabilize the emission current. The MOSFET-structured emitter is highly compatible with n-MOSFET LSIs in the fabrication processes. Therefore, it is possible to integrate the MOSFET-structured emitter with a driving circuit. We have integrated the Si MOSFET-FEA with n-MOSFET circuits monolithically based on the n-MOSFET process.\",\"PeriodicalId\":202620,\"journal\":{\"name\":\"Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)\",\"volume\":\"12 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-10-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMNC.2001.984189\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMNC.2001.984189","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

为了提高发射电流的稳定性和均匀性，我们提出并制造了一种采用金属氧化物半导体场效应晶体管结构的电流可控硅场发射极(mosfet结构的硅场发射极)。在该器件中，内置的MOSFET可以控制场发射体的电子供应，以稳定发射电流。在制造过程中，mosfet结构的发射极与n-MOSFET lsi高度兼容。因此，可以将mosfet结构的发射极与驱动电路集成在一起。我们基于n-MOSFET工艺将Si MOSFET-FEA与n-MOSFET电路单片集成。

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Monolithic integration of Si field emitter arrays with n-MOSFET circuits

To improve the stability and the uniformity of emission currents, we have proposed and fabricated a current-controllable silicon field emitter incorporating a metal-oxide -semiconductor field-effect transistor structure (a MOSFET-structured silicon field emitter). In this device, a built-in MOSFET can control the supply of electrons to the field emitters to stabilize the emission current. The MOSFET-structured emitter is highly compatible with n-MOSFET LSIs in the fabrication processes. Therefore, it is possible to integrate the MOSFET-structured emitter with a driving circuit. We have integrated the Si MOSFET-FEA with n-MOSFET circuits monolithically based on the n-MOSFET process.

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Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)

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