{"title":"Influence of substrate roughness on the formation of self-assembled monolayers (SAM) on Silicon [100]","authors":"S. Moré, H. Graaf, Y. Nonogaki, T. Urisu","doi":"10.1109/IMNC.2001.984148","DOIUrl":null,"url":null,"abstract":"We have investigated the relationship between surface roughness and morphology and the formation of self-assembled monolayers (SAM). Rough surfaces were prepared by abrading polished Si[100] wafers with SiC paper. Dodecan (-C/sub 12/H/sub 25/) SAM were prepared by refluxing the samples in a 30% dodecene solution in mesithylene. The FTIR spectra of these samples were analyzed with respect to the CH/sub 2/- and CH/sub 3/- peak positions, peak intensities and peak widths.","PeriodicalId":202620,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMNC.2001.984148","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
We have investigated the relationship between surface roughness and morphology and the formation of self-assembled monolayers (SAM). Rough surfaces were prepared by abrading polished Si[100] wafers with SiC paper. Dodecan (-C/sub 12/H/sub 25/) SAM were prepared by refluxing the samples in a 30% dodecene solution in mesithylene. The FTIR spectra of these samples were analyzed with respect to the CH/sub 2/- and CH/sub 3/- peak positions, peak intensities and peak widths.