Simulation parameter effects on critical dimension and sensitivity of 193 nm Chemically Amplified Resist

Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468) Pub Date : 2001-10-31 DOI:10.1109/IMNC.2001.984172

Sang-Kon Kim, D. Sohn, Eungsung Seo, Jin-Young Kim, Y. Sohn, Hye-keun Oh

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引用次数: 1

Abstract

It is helpful in lithography process and developing resist to know the relationship between the critical dimension variation and simulation parameters such as aerial image parameters, the Dill exposure parameters, PEB (Post Exposure Bake) parameters, and development parameters. In this paper the profiles of a 193 nm CAR (Chemically Amplified Resist) were simulated with those various parameter, and those results were analyzed by the response surface methodology (RSM) approach to know the influence of independent factors on a dependent response and to optimize each process. Both the parameter effects of each process and the simulation process effects of the whole process were described about critical dimension and side wall angle so that the sensitivity of lithography process could be assumed. The development parameters were modified with those of flood exposure experiment according to the pattern density and pattern size for more accurate lithography simulation. Also those effects on critical dimension and side wall angle were analyzed. For the validity of our results the quantitative comparison between our results and those of a commercial tool was shown.

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模拟参数对193nm化学放大阻片临界尺寸和灵敏度的影响

了解关键尺寸变化与航拍图像参数、Dill曝光参数、PEB (Post exposure Bake)参数、显影参数等仿真参数之间的关系，有助于光刻工艺和显影抗蚀剂的研究。本文对193 nm的化学放大阻片(CAR)进行了模拟，并利用响应面法(RSM)对模拟结果进行了分析，以了解独立因素对相关响应的影响，并对各工艺进行优化。描述了各工艺参数对临界尺寸和侧壁角的影响，以及整个工艺过程的仿真影响，从而对光刻工艺的灵敏度进行了假设。为了获得更精确的光刻模拟结果，根据图案密度和图案尺寸对显影参数与洪水曝光实验参数进行了修正。并对临界尺寸和侧壁角的影响进行了分析。为了验证结果的有效性，将结果与商业工具的结果进行了定量比较。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)

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