2022 Device Research Conference (DRC)最新文献

{"title":"Non-Volatile Resistive Switching in PtSe2-Based Crosspoint Memristors","authors":"Dennis Braun, Sebastian Lukas, L. Völkel, Oliver Hartwig, M. Prechtl, M. Belete, S. Kataria, T. Wahlbrink, A. Daus, G. Duesberg, M. Lemme","doi":"10.1109/DRC55272.2022.9855787","DOIUrl":"https://doi.org/10.1109/DRC55272.2022.9855787","url":null,"abstract":"Two-dimensional (2D) materials such as transition metal dichalcogenides (TMDCs) have gained attention for neuromorphic computing applications due to their resistive switching (RS) behavior [1], [2]. Among TMDCs, platinum diselenide (PtSe2) stands out because it can be grown at complementary metal-oxide-semiconductor (CMOS) back-end-of-line (BEOL) compatible temperatures [3], [4] and it has shown excellent long-term stability [5]. However, its potential for RS remains largely unexplored with only preliminary proof-of-concept characteristics presented in a multilayer PtSe2 device with Au electrodes [6]. Here, we present the first detailed study on forming free RS in PtSe2-based crosspoint (CP) memristors using CMOS-compatible electrodes. We find remarkably low switching fields (0.08 V /nm) likely related to our choice of electrode materials and excellent retention for at least several days.","PeriodicalId":200504,"journal":{"name":"2022 Device Research Conference (DRC)","volume":"137 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117277026","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High-performance TiO2 thin film transistors using TiO2 as both channel and dielectric","authors":"Jie Zhang, Yuping Zeng","doi":"10.1109/DRC55272.2022.9855648","DOIUrl":"https://doi.org/10.1109/DRC55272.2022.9855648","url":null,"abstract":"Titanium dioxide (TiO<inf>2</inf>) have emerged as a versatile multifunctional material, which enables numerous device applications such as optical sensor, solar cell, thin film transistors (TFTs), and memristive device [1]. To successfully apply TiO<inf>2</inf> in these devices, the electrical properties of TiO<inf>2</inf> films need to be well studied. Previously, we demonstrated the conductivity transition of the nearly stoichiometric TiO<inf>2</inf> films via the crystallinity engineering. High-performance TFTs with polycrystalline TiO<inf>2</inf> (poLY-TiO<inf>2</inf>) as the active channel and InAIN/GaN MISHEMTs with amorphou <tex>$text{TiO}_{2}(mathrm{a}-text{TiO}_{2})$</tex> as the gate dielectrics were demonstrated [2]. Herein, we report for the first time a proof-of-concept TiO<inf>2</inf> TFT using poly- TiO<inf>2</inf> channel and <tex>$mathrm{a}-text{TiO}_{2}$</tex> dielectric. These TiO<inf>2</inf> TFTs show a high device performance including a high on/off current ratio <tex>$(mathrm{I}_{text{on}}/mathrm{I}_{text{off}})$</tex> of 4×10⁸ and a low subthreshold swing (SS) of 120 m V/dec under a battery-compatible voltage <tex>$(< 2mathrm{V})$</tex>, suggesting their strong potential for portable electronics.","PeriodicalId":200504,"journal":{"name":"2022 Device Research Conference (DRC)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115348504","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"SiGeSn Technology for All-Group-IV Photonics","authors":"Shui-Qing Yu, G. Salamo, W. Du, Baohua Li, G. Sun, R. Soref, Yong-Hang Zhang, G. Chang","doi":"10.1109/DRC55272.2022.9855799","DOIUrl":"https://doi.org/10.1109/DRC55272.2022.9855799","url":null,"abstract":"The SiGeSn semiconductors have opened a new route for the development of all-group-IV-based optoelectronic devices [1], [2]. The unique optical properties of SiGeSn alloys include: i) a true direct bandgap material leads to the demonstration of band- to-band transition LEDs and lasers that could be monolithically integrated on Si substrates [3], [4]; ii) the refractive index and bandgap energy can be engineered independently, making the operation wavelengths of emitters and photo detectors cover the broad near- and mid-infrared range [5]; and iii) the full complementary metal-oxide-semiconductor (CMOS) compatibility allows for low-cost and high-yield foundry manufacturing [6]. This talk will present the recent progress for the development of SiGeSn technology, including the material growth using commercial chemical vapor deposition reactor, demonstration of optically pumped and electrically injected lasers, light emitting diodes (LEDs) and photodetectors.","PeriodicalId":200504,"journal":{"name":"2022 Device Research Conference (DRC)","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129758516","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"AlN-capped P-(AlxGal-x)2O3/Ga2O3 heterostructure field-effect transistors for near-junction thermal management of next generation power devices","authors":"J. S. Lundh, Hannah N. Masten, K. Sasaki, A. Jacobs, Zhe Cheng, J. Spencer, Lei Chen, J. Gallagher, A. Koehler, K. Konishi, S. Graham, A. Kuramata, K. Hobart, M. Tadjer","doi":"10.1109/drc55272.2022.9855809","DOIUrl":"https://doi.org/10.1109/drc55272.2022.9855809","url":null,"abstract":"While the ultrawide bandgap (Eg~4.9 e V) and high critical electric field (E<inf>c</inf>~8 MV /cm) of ß-Ga<inf>2</inf>O<inf>3</inf> [1] has promising implications for power electronics, the very low bulk thermal conductivity (0.11-0.27 W/cm.K [2]) presents a formidable thermal challenge. For lateral devices, heat is typically generated within tens of nanometers of the semiconductor surface. Therefore, a pathway for efficient heat dissipation through the surface could substantially improve device-level thermal performance. In this work, we report the first experimental demonstration of top-side device-level thermal management of Ga<inf>2</inf>O<inf>3</inf>-based transistors by capping an (Al<inf>0.21</inf>Ga<inf>0.79</inf>)<inf>2</inf>O<inf>3</inf>/Ga<inf>2</inf>O<inf>3</inf> heterostructure field-effect transistor (HFET) with a ~400 nm thick sputter-deposited aluminum nitride (AlN) heat spreading layer. Compared to a reference HFET, we observed a ~30% reduction in device-level thermal resistance at the gate electrode.","PeriodicalId":200504,"journal":{"name":"2022 Device Research Conference (DRC)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128571109","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Are Argon and Nitrogen Gases Really Inert to Graphene Devices?","authors":"J. Kumar, M. Shrivastava","doi":"10.1109/DRC55272.2022.9855822","DOIUrl":"https://doi.org/10.1109/DRC55272.2022.9855822","url":null,"abstract":"Argon and Nitrogen in their gaseous state are used to provide an inert environment either during probing electronic materials and devices or processing such devices. Although these gases are relatively inert with bulk materials, the gases, however, can interact with different surfaces and influence device physics and surface chemistry. Graphene, a monolayer 2D material, can be influenced by these gases, especially in carbon vacancy and Stone Wales (SW) point defects, which are inherently present in graphene due to growth or synthesis challenges. In this work, we have explored the interaction of graphene with argon and nitrogen in the presence of carbon vacancy and SW point defects based on Density Functional Theory (DFT) and Non-Equilibrium Greens Function (NEGF) computational methods using the QuantumATK simulation tool. We have investigated that, although nitrogen and argon are inert to pristine graphene, the gases enhance their orbitals overlap with graphene in the presence of these defects. Fundamental properties of graphene which drive corresponding device behavior, like band structure, trap states, and fermi energy level, are perturbed by this enhanced interaction. NEGF study reveals that channel current in graphene devices can be degraded due to the influence of these gases in the presence of carbon vacancy and SW defects.","PeriodicalId":200504,"journal":{"name":"2022 Device Research Conference (DRC)","volume":"429 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125844457","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Graphene waveguide-integrated thermal infrared emitter","authors":"Nour Negm, Sarah Zayouna, S. Parhizkar, Pen-Sheng Lin, Po-Han Huang, S. Suckow, S. Schröder, E. Luca, Floria Ottonello Briano, A. Quellmalz, F. Niklaus, K. Gylfason, M. Lemme","doi":"10.1109/DRC55272.2022.9855779","DOIUrl":"https://doi.org/10.1109/DRC55272.2022.9855779","url":null,"abstract":"Low-cost and easily integrable mid-infrared (MIR) sources are highly desired for photonic integrated circuits. Thermal incandescent MIR sources are widely used. They work by Joule heating, i.e. an electrical current through the emitter causes thermal emission according to Planck's law. Their simple design with only two contact pads makes them integrable with typical optoelectronic components in high-volume production flows. Graphene's emissivity is comparable to common metallic emitters. In contrast to the latter, graphene is transparent at MIR wavelengths, which enables placing large area graphene emitters in the evanescent field of integrated waveguides [1]–[2]. This enhances emission by near-field coupling directly into the waveguide mode, avoiding the mode-mismatch to free space. Here, we present the first experimental demonstration of a graphene emitter placed directly on a photonic waveguide, hence emitting directly into the waveguide mode.","PeriodicalId":200504,"journal":{"name":"2022 Device Research Conference (DRC)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129214327","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Polarization-Engineering of III-N mm-Wave Transistors for High Efficiency and Linearity","authors":"P. Fay, N. Venkatesan, J. Moon","doi":"10.1109/DRC55272.2022.9855652","DOIUrl":"https://doi.org/10.1109/DRC55272.2022.9855652","url":null,"abstract":"III-N-based transistors are leading candidates for RF and microwave applications, and are increasingly being explored for mm-wave applications. While excellent speed [1] and power performance [2] have been achieved, many applications would benefit from further improvements in performance. In particular, the limited linearity of conventional GaN HEMTs necessitates extensive digital predistortion (DPD) correction, and field plates are often used to manage the drain-side electric field. Field plates can be effective at managing the field, but they also result in parasitic capacitance that compromises performance, especially at mm-wave frequencies. These limitations can be addressed by exploiting polarization engineering and compositional grading to go beyond the limits of abrupt-heterostructure device performance. This approach has enabled improvements in mm-wave transistor linearity [3], noise figure and ft/fmax [4], and power scaling and power-added efficiency [5].","PeriodicalId":200504,"journal":{"name":"2022 Device Research Conference (DRC)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124030479","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Breakdown Voltage Enhancement of GaN diodes with High-k Dielectric","authors":"V. Talesara, Yuxuan Zhang, Junao Cheng, Hongping Zhao, W. Lu","doi":"10.1109/drc55272.2022.9855821","DOIUrl":"https://doi.org/10.1109/drc55272.2022.9855821","url":null,"abstract":"Gallium nitride (GaN) has the great potential for high-power devices due to its wide bandgap and high breakdown field. In particular for high-power GaN pn diodes, critical field is noticed at the p-n interface and electrode edges at a high reverse bias. Therefore, to achieve high breakdown voltage, electric field at the edges need to be decreased. Edge termination techniques such as guard rings and field plate help with field management, the critical electric field is still located at the edge of the electrode. To decrease the effects of high electric field and also to reduce the surface leakage current, addition of passivation layer is generally used. In such device structures, the electric field in the passivation layer decreases abruptly. To mitigate the field crowding effect, in this work, we implemented a thin high-k dielectric layer for breakdown voltage enhancement. We show significant breakdown voltage improvement on GaN p-n diodes with high-k dielectric (Barium titanate, BTO, ε~ 180)/spin-on-glass (SOG) passivation layers in comparison with devices with only low-k (3.9) SOG passivation layer.","PeriodicalId":200504,"journal":{"name":"2022 Device Research Conference (DRC)","volume":"42 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131075939","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Trapping Phenomena in GaN HEMTs with Fe- and C-doped Buffer","authors":"Kexin Li, T. Matsuda, E. Yagyu, K. Teo, S. Rakheja","doi":"10.1109/DRC55272.2022.9855817","DOIUrl":"https://doi.org/10.1109/DRC55272.2022.9855817","url":null,"abstract":"GaN-based high electron mobility transistors (HEMTs) are a promising technology for high-frequency and high-power applications due to their high breakdown strength, superior electron transport characteristics, and their ability to support a large polarization-induced electron concentration. However, reliability issues in GaN HEMTs, such as trap-induced degradation, have drawn considerable attention in both academia and industry. Studies have been carried out on reducing the effect of traps via the optimization of the epitaxial structure of the HEMT. In this work, we focus on extracting and further analyzing the properties of traps in an AlGaN/GaN HEMT, shown in Fig. 1, with a doped GaN buffer. This device is fabricated and characterized at Mitsubishi Electric Corporation (Japan) and additional details regarding experimental methods will be presented elsewhere. The doping profile achieved during the epitaxial growth is shown in Fig. 2. Fe and C doping in the GaN buffer are typically employed to enhance the confinement of the two-dimensional electron gas (2DEG) in the channel and thus reduce buffer leakage [1]. The doping process also introduces traps in the buffer, which are found to be responsible for current collapse (CC) in GaN HEMTs. We analyze the trap characteristics in fabricated AlGaN/GaN HEMTs as a function of C doping in the buffer, while Fe doping concentration is fixed. The activation energy $(E_{A})$ and cross section $(sigma)$ of traps in the fabricated devices are extracted from the Arrhenius plot of the drain current transient (DCT) measurements. Similar to previous works, we find that the C doping in GaN layer is mainly responsible for the acceptor-like trapping states with activation around 0.5 eV. We also conduct time-domain simulations of the HEMT using Sentaurus from Synopsys to understand the impact of trap characteristics on the transient response of this device. We conclude that for acceptor-like trapping states with large $E_{A}$ and small $sigma$, the current takes longer to recover from CC, while the trap concentration affects the degree of collapse.","PeriodicalId":200504,"journal":{"name":"2022 Device Research Conference (DRC)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134497980","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ultrathin Ferroelectric Nondoped HfO2 for MFSFET with High-speed and Low-voltage Operation","authors":"Joong‐Won Shin, Masakazu Tanuma, J. Pyo, S. Ohmi","doi":"10.1109/DRC55272.2022.9855780","DOIUrl":"https://doi.org/10.1109/DRC55272.2022.9855780","url":null,"abstract":"Ferroelectric nondoped HfO2 has been investigated for metal-ferroelectric-semiconductor field-effect transistor (MFSFET) application due to the low crystallization temperature and the suppression of SiO2 interfacial layer (IL) formation between HfO2 and Si substrate. We realized MFSFET with the scaling of ferroelectric gate insulator utilizing 5 nm thick nondoped HfO2, and the ferroelectric property was improved by decreasing the sputtering damage of Pt gate electrode deposition [1]. However, the low frequency noise affected by interfacial property of MFSFET becomes important, especially for scaled device [2]. In this research, we investigated the effects of sputtering power for 5 nm thick HfO2 gate insulator formation to realize high-speed operation of MFSFET.","PeriodicalId":200504,"journal":{"name":"2022 Device Research Conference (DRC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129605898","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}