2022 Device Research Conference (DRC)最新文献

Movement of Current Filaments and its Impact on Avalanche Robustness in Vertical GaN P-N diode Under UIS stress 电流丝的运动及其对垂直GaN P-N二极管在美国应力下雪崩稳健性的影响

2022 Device Research Conference (DRC) Pub Date : 2022-06-26 DOI: 10.1109/DRC55272.2022.9855818

B. Shankar, K. Zeng, B. Gunning, Rafael Perez Martinez, Chuanzhe Meng, J. Flicker, A. Binder, J. Dickerson, R. Kaplar, S. Chowdhury

{"title":"Movement of Current Filaments and its Impact on Avalanche Robustness in Vertical GaN P-N diode Under UIS stress","authors":"B. Shankar, K. Zeng, B. Gunning, Rafael Perez Martinez, Chuanzhe Meng, J. Flicker, A. Binder, J. Dickerson, R. Kaplar, S. Chowdhury","doi":"10.1109/DRC55272.2022.9855818","DOIUrl":"https://doi.org/10.1109/DRC55272.2022.9855818","url":null,"abstract":"Power semiconductor devices encounter stressful switching conditions in power electronic circuits [1]. Therefore, avalanche capability in power devices is highly desired, and its study is extremely important for realizing robust devices. Fortunately, GaN P-N junction possess avalanche capability, making vertical GaN devices with intrinsic P-N junctions robust against breakdown [2]. Most recently, vertical GaN P-N diodes with avalanche breakdown voltage up to 6 kV were reported [3]. However, most of these studies were done under DC, and a very few have investigated the avalanche behavior under circuit-level stresses such as unclamped inductive switching (UIS) stress. We previously reported unform and robust avalanche in our in-house fabricated 1.3 kV vertical GaN-on-GaN P-N diodes [4]. In our present work we extend our study to report the observation and role of current filament (microplasma tube) formed during avalanche conditions using the 1.3 kV GaN-on-GaN vertical P-N diode under UIS stress. We infer that the robustness in avalanche increased due to the movements of current filaments relieving the thermal stress.","PeriodicalId":200504,"journal":{"name":"2022 Device Research Conference (DRC)","volume":"30 6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125818565","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Superconducting Josephson Junction FET-based Cryogenic Voltage Sense Amplifier 基于超导约瑟夫森结场效应晶体管的低温电压检测放大器

2022 Device Research Conference (DRC) Pub Date : 2022-06-26 DOI: 10.1109/DRC55272.2022.9855654

Shamiul Alam, Md. Mazharul Islam, M. S. Hossain, A. Aziz

{"title":"Superconducting Josephson Junction FET-based Cryogenic Voltage Sense Amplifier","authors":"Shamiul Alam, Md. Mazharul Islam, M. S. Hossain, A. Aziz","doi":"10.1109/DRC55272.2022.9855654","DOIUrl":"https://doi.org/10.1109/DRC55272.2022.9855654","url":null,"abstract":"Cryogenic (cryo) memory blocks are envisioned to be crucial components for - (i) scalable quantum computing systems with> 1000 qubits [1], and (ii) superconducting (SC) single flux quantum (SFQ) systems [2]. Decades of research has led to a whole host of cryo-memory variants (SC, non-SC, and hybrid), and more are being actively explored. Despite having such massive interest in the search for cryo-storage solutions, the design possibilities for compatible sense amplifiers (SA) remain largely unexplored. The existing approaches for cryogenic sensing are mostly agnostic to the unique properties of the memory array [3]–[5]. For example, the recently proposed SC and twistronic memories promise seamless compatibility with the cryogenic processors in terms of speed, power, and temperature range [4]–[7]. However, they rely on current-driven read operation, and necessitate voltage-based sensing. Therefore, a current-based cryo-SA [3] cannot be used for these emerging cryo-memory variants. In this work, we propose a voltage sense amplifier (VSA) for cryogenic memories utilizing the Josephson junction field effect transistor (JJFET) [8] as the primary component, and the heater cryotron (hTron) [4], [9] as an auxiliary entity. We exploit their coupled interactions to sense ultra-low (< 1 mV) voltage difference (customary for many cryo-memory technologies [4]–[7]) between the binary memory states (0/1) at/below 4 Kelvin temperature.","PeriodicalId":200504,"journal":{"name":"2022 Device Research Conference (DRC)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115540613","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 9

Ambient Effects on Reprogrammable Read-only Selector-free Memory for the Embedded NVM Applications 嵌入式NVM应用程序中可重编程只读无选择器内存的环境影响

2022 Device Research Conference (DRC) Pub Date : 2022-06-26 DOI: 10.1109/DRC55272.2022.9855800

Ying‐Chen Chen, Justin Stouffer, Favian Villanueva, Jordan Beverly

引用次数: 0

Modeling of the Charge-Voltage Characteristics of AlScN/AlN/GaN Heterostructures AlScN/AlN/GaN异质结构电荷电压特性的建模

2022 Device Research Conference (DRC) Pub Date : 2022-06-26 DOI: 10.1109/DRC55272.2022.9855781

Bohao Wu, S. Rakheja

{"title":"Modeling of the Charge-Voltage Characteristics of AlScN/AlN/GaN Heterostructures","authors":"Bohao Wu, S. Rakheja","doi":"10.1109/DRC55272.2022.9855781","DOIUrl":"https://doi.org/10.1109/DRC55272.2022.9855781","url":null,"abstract":"With evolving research into III-nitride materials for various high-frequency applications, the ternary material ScxAl1-xN (referred to as ScAlN throughout) has emerged as an attractive candidate due to its exceptional piezoelectric effect (the piezoelectric moduli $e_{33}=9.125x+1.471(1-x)-6.625x(1-x)$ increases rapidly with an increasing $x$ [1]), ferroelectricity [2], and high spontaneous polarization [3]. Current research in ScAlN/AlN/GaN heterostructures is at a nascent stage and the potential benefits of utilizing ScAlN in high electron mobility transistors (HEMTs) are not quantified. We study the impact of alloy composition and barrier thickness on the density and the gate modulation efficiency of the two-dimensional electron gas (2DEG) in various ScAlN/AlN/GaN heterostructures (Figs. 1(a)&(b)). We identify the design constraints that must be met for this heterojunction to be used effectively within a HEMT architecture. An analytic charge-voltage (Q-V) and capacitance-voltage (C-V) model is developed and validated against Schrodinger- Poisson simulations. The analytic model is extended to 2D to account for the impact of drain bias on the channel charge for an ScAlN/AlN/GaN HEMT, and the role of channel transmission coefficient (i.e., diffusive versus quasi-ballistic (QB) transport) on Q-V and C-V is examined.","PeriodicalId":200504,"journal":{"name":"2022 Device Research Conference (DRC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129368907","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Impact of Corner Rounding on Quantum Confinement in GAA Nanosheet FETs for Advanced Technology Nodes 角化对先进技术节点GAA纳米片场效应管量子约束的影响

2022 Device Research Conference (DRC) Pub Date : 2022-06-26 DOI: 10.1109/DRC55272.2022.9855803

Anirban Kar, S. Sarker, A. Dasgupta, Y. Chauhan

引用次数: 0

MFSFET with Ferroelectric HfN for Analog Memory Application 用于模拟存储器的铁电HfN mfset

2022 Device Research Conference (DRC) Pub Date : 2022-06-26 DOI: 10.1109/DRC55272.2022.9855792

S. Ohmi, A. Ihara, Masakazu Tanuma, J. Pyo, Joong‐Won Shin

引用次数: 0

Compact Model for Trap Assisted Tunneling based GIDL 基于陷阱辅助隧道的GIDL紧凑模型

2022 Device Research Conference (DRC) Pub Date : 2022-06-26 DOI: 10.1109/DRC55272.2022.9855798

Chetan Kumar Dabhi, G. Pahwa, S. Salahuddin, Chenming Hu

引用次数: 0

Nanoscale Devices Based on Two-dimensional and Ferroelectric Materials 基于二维和铁电材料的纳米器件

2022 Device Research Conference (DRC) Pub Date : 2022-06-26 DOI: 10.1109/DRC55272.2022.9855649

Zijing Zhao, Kai Xu, Jialun Liu, Wei Jiang, Hojoon Ryu, S. Rakheja, T. Low, Wenjuan Zhu

{"title":"Nanoscale Devices Based on Two-dimensional and Ferroelectric Materials","authors":"Zijing Zhao, Kai Xu, Jialun Liu, Wei Jiang, Hojoon Ryu, S. Rakheja, T. Low, Wenjuan Zhu","doi":"10.1109/DRC55272.2022.9855649","DOIUrl":"https://doi.org/10.1109/DRC55272.2022.9855649","url":null,"abstract":"Ferroelectrics have a spontaneous electric polarization that can be reversed by the application of an external electric field, while two-dimensional (2D) materials are crystalline solids consisting of one or few layer(s) of atoms. In ferroelectric/2D heterostructures, the ferroelectric materials can provide programmable and non-volatile doping in the 2D materials, while the atomically thin body in 2D materials enables strong electrostatic control over the channel by the polarized ferroelectric metal oxides. A wide range of nanoscale devices have been developed based on ferroelectric/2D hetero structures including high-performance nonvolatile memories, steep slope transistors, programmable junctions, charge and pressure sensors, and photodiodes [1]–[4]. In recent years, van der Waals (vdW) ferroelectrics emerged, which are 2D materials with intrinsic ferroelectric order. These vdW materials can retain ferroelectricity down to 1 unit-cell thickness, have tunable bandgap, and can be grown or transferred on any substrate [5]–[7], thus enabling a new series of optoelectronic and electromechanical devices. In this talk, we will discuss our recent work in developing reconfigurable, multifunction and analog devices based on ferroelectric/2D heterostructures and vdW ferroelectric materials [8]–[14].","PeriodicalId":200504,"journal":{"name":"2022 Device Research Conference (DRC)","volume":"147 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126015460","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Ge-based Mid-infrared integrated photonics platform for Sensing 基于ge的中红外传感集成光子平台

2022 Device Research Conference (DRC) Pub Date : 2022-06-26 DOI: 10.1109/DRC55272.2022.9855820

Sanghyeon Kim, Jinha Lim, J. Shim, Dae-Myeong Geum

引用次数: 0

Thermal stability of ALD-grown SiO2 and Al2O3 on (010) β-Ga2O3 substrates ald生长SiO2和Al2O3在(010)β-Ga2O3衬底上的热稳定性

2022 Device Research Conference (DRC) Pub Date : 2022-06-26 DOI: 10.1109/DRC55272.2022.9855795

A. Islam, A. Miesle, M. Dietz, K. Leedy, S. Ganguli, G. Subramanyam, W. Wang, N. Sepelak, D. Dryden, S. Tetlak, K. Liddy, A. Green, K. Chabak

{"title":"Thermal stability of ALD-grown SiO2 and Al2O3 on (010) β-Ga2O3 substrates","authors":"A. Islam, A. Miesle, M. Dietz, K. Leedy, S. Ganguli, G. Subramanyam, W. Wang, N. Sepelak, D. Dryden, S. Tetlak, K. Liddy, A. Green, K. Chabak","doi":"10.1109/DRC55272.2022.9855795","DOIUrl":"https://doi.org/10.1109/DRC55272.2022.9855795","url":null,"abstract":"Ultra-wide band gap semiconductors like β-Ga<inf>2</inf>O<inf>3</inf> undergo different high temperature processes during device fabrication. In addition, devices made with β-Ga<inf>2</inf>O<inf>3</inf> are also promising for high temperature applications. Therefore, it is very important to study thermal stability of materials and devices, as high temperatures are known to change the integrity of the dielectric and cause diffusion of atoms across different interfaces within the device. In this article, we study the thermal stability of SiO<inf>2</inf> and Al<inf>2</inf>O<inf>3</inf> formed using plasma-enhanced atomic layer deposition (PEALD) on (010) Sn-doped β-Ga<inf>2</inf>O<inf>3</inf>. Our study reveals that MOSCAPs made with SiO<inf>2</inf> maintains a breakdown strength (EBD) of > 10 MV/cm at temperatures up to 900 °C, while maintaining low leakage current at oxide electric fields E<inf>ox</inf> ≤ 5 MV/cm. In comparison, devices made with Al<inf>2</inf>O<inf>3</inf> shows high leakage current (often starting at E<inf>ox</inf> ~ 2.5 MV/cm) and interfacial/bulk crystallization (starting at 600°C). Interface trap density (NIT) probed using multi-frequency and UV-assisted C-V measurements shows ≤ 10<sup>12</sup> cm<sup>2</sup> for Al<inf>2</inf>O<inf>3</inf> and higher values for SiO<inf>2</inf> This is the first demonstration of better thermal stability for ALD SiO<inf>2</inf> compared to Al<inf>2</inf>O<inf>3</inf> formed on (010) β-Ga<inf>2</inf>O<inf>3</inf> substrates.","PeriodicalId":200504,"journal":{"name":"2022 Device Research Conference (DRC)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125239707","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0