用于模拟存储器的铁电HfN mfset

2022 Device Research Conference (DRC) Pub Date : 2022-06-26 DOI:10.1109/DRC55272.2022.9855792

S. Ohmi, A. Ihara, Masakazu Tanuma, J. Pyo, Joong‐Won Shin

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引用次数: 0

摘要

铁电HfO2 (Fe-HfO2)薄膜因其与Si的相容性而在金属-铁电-硅场效应晶体管(mfset)中的应用备受关注[1]，[2]。Fe-HfO2的关键问题之一是SiO2界面层(IL)的形成，这会降低存储器件的特性[1]-[3]。我们已经报道了在Si(100)上形成的铁电HfN (Fe-HfN)，并以菱形相结晶[4]，[5]。从热力学的角度来看，Fe-HfN比Fe-HfO2更能抑制IL的形成。本文研究了利用Fe-HfN栅极绝缘子的mfsfet的记忆特性。研究了Si表面平坦化工艺[6]对改善模拟存储器接口性能的影响。

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MFSFET with Ferroelectric HfN for Analog Memory Application

Ferroelectric HfO2 (Fe-HfO2) thin film has much attention for the Metal-Ferroelectrics-Si Field-Effect Transistor (MFSFET) application because of its Si compatibility [1], [2]. One of the critical issues of Fe-HfO2 is the SiO2 interfacial layer (IL) formation which degrades the memory device characteristics [1]–[3]. We have reported the ferroelectric HfN (Fe-HfN) formed on Si(100) which is crystallized in rhombohedral phase [4], [5]. The IL formation is expected to be suppressed in case of Fe-HfN compared to Fe-HfO2 from the thermodynamics point of view. In this paper, we have investigated the memory characteristics of MFSFETs utilizing Fe-HfN gate insulator. The effect of Si surface flattening process [6] was investigated to improve the interface property for analog memory application.

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2022 Device Research Conference (DRC)

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