2022 Device Research Conference (DRC)最新文献_第6页

First Demonstration of Top-Gated ITO Transistors: Effect of Channel Passivation 顶门控ITO晶体管的首次演示:通道钝化效应

2022 Device Research Conference (DRC) Pub Date : 2022-06-26 DOI: 10.1109/drc55272.2022.9855811

S. Wahid, A. Daus, Jimin Kwon, S. Qin, Jung-Soo Ko, K. Saraswat, H. Wong, E. Pop

{"title":"First Demonstration of Top-Gated ITO Transistors: Effect of Channel Passivation","authors":"S. Wahid, A. Daus, Jimin Kwon, S. Qin, Jung-Soo Ko, K. Saraswat, H. Wong, E. Pop","doi":"10.1109/drc55272.2022.9855811","DOIUrl":"https://doi.org/10.1109/drc55272.2022.9855811","url":null,"abstract":"Ultrathin indium tin oxide (ITO) transistors have shown good performance, with effective mobility $mu_{text{eff}}sim 55text{cm}^{2}mathrm{V}^{-1}mathrm{s}^{-1}$ [1]. Due to their wide band gap (>3 eV), low-temperature large-area deposition, low off- and high on-state current, they are promising candidates for back-end of the line (BEOL) and 3D integration [1], [2]. However, all ITO transistors to date have back-gated (BG) structures, and the effect of top dielectrics or capping layers is unknown. Here, we demonstrate the first top-gated (TG) ITO transistors while successfully passivating the channel during TG dielectric layer deposition. We compare different precursors for atomic layer deposition (ALD) of the passivation layer and their role on device behavior. Ozone-based ALD minimizes the negative shift in threshold voltage $(V_{mathrm{T}})$ at short channel lengths and achieves $I_{max}approx 260mu mathrm{A}/mu mathrm{m}$ at VDS =1 V, on/off current ratio of $sim 10^{10}$ for $Lapprox 700$ nm channel. Our TG ITO transistors have $mu_{text{eff}}approx 60text{cm}^{2}mathrm{V}^{-1}mathrm{s}^{-1}$.","PeriodicalId":200504,"journal":{"name":"2022 Device Research Conference (DRC)","volume":"90 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122953039","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

First demonstration of N-polar GaN/AlGaN/AlN HEMT on Single Crystal AlN Substrates 在单晶AlN衬底上首次展示n极性GaN/AlGaN/AlN HEMT

2022 Device Research Conference (DRC) Pub Date : 2022-06-26 DOI: 10.1109/DRC55272.2022.9855776

Eungkyun Kim, Zexuan Zhang, J. Singhal, K. Nomoto, A. Hickman, M. Toita, D. Jena, H. Xing

引用次数: 0

Gate-Tunable Resonant Tunneling in a Dual-Gated Twist-Controlled Double Monolayer Graphene-hBN Heterostructure 双门控扭控双单层石墨烯- hbn异质结构中的栅极可调谐共振隧道

2022 Device Research Conference (DRC) Pub Date : 2022-06-26 DOI: 10.1109/DRC55272.2022.9855786

K. Lin, N. Prasad, G. William Burg, Kenji Watanabe, T. Taniguchi, E. Tutuc

{"title":"Gate-Tunable Resonant Tunneling in a Dual-Gated Twist-Controlled Double Monolayer Graphene-hBN Heterostructure","authors":"K. Lin, N. Prasad, G. William Burg, Kenji Watanabe, T. Taniguchi, E. Tutuc","doi":"10.1109/DRC55272.2022.9855786","DOIUrl":"https://doi.org/10.1109/DRC55272.2022.9855786","url":null,"abstract":"Van der Waals heterostructures of two-dimensional (2D) crystals are a versatile platform for electron physics and device applications. An emerging device that departs markedly from the field-effect transistor, and has shown potential applications for logic [1], memory [2], and security [3] is the interlayer resonant tunneling field-effect transistor (ITFET), consisting of two independently contacted 2D layers separated by a tunnel barrier. In such devices, energy and momentum conservation during tunneling leads to interlayer voltage-current characteristics with gate-tunable negative differential resistance (NDR). ITFET demonstrations include single-gated double monolayer or double bilayer graphene separated by hexagonal boron-nitride (hBN) [4]–[5], dual-gated double bilayer graphene separated by WSe2 [6], and dual-gated double WSe2 separated by hBN barriers [7]. Here, we present a combined experimental and modeling study of dual-gated double monolayer graphene-hBN heterostructures, where the crystals axes of the two graphene electrodes are rotationally aligned, thereby enabling resonant tunneling and gate-tunable NDR.","PeriodicalId":200504,"journal":{"name":"2022 Device Research Conference (DRC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128428990","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Photonic Curing: Rapid Thermal Processing of Oxide Thin-film Transistors on Plastic 光子固化:塑料上氧化薄膜晶体管的快速热加工

2022 Device Research Conference (DRC) Pub Date : 2022-06-26 DOI: 10.1109/DRC55272.2022.9855807

Neel Chatterjee, Adam M. Weidling, S. Swisher

{"title":"Photonic Curing: Rapid Thermal Processing of Oxide Thin-film Transistors on Plastic","authors":"Neel Chatterjee, Adam M. Weidling, S. Swisher","doi":"10.1109/DRC55272.2022.9855807","DOIUrl":"https://doi.org/10.1109/DRC55272.2022.9855807","url":null,"abstract":"Metal oxide semiconductors (e.g., In2O3, InZnO) are excellent materials for flexible electronics because they exhibit high carrier mobility in the amorphous phase. In particular, metal oxides obtained with solution-processing methods based on sol-gel inks are compatible with large-area roll-to-roll manufacturing, thus offering a cost-effective alternative to traditional gas-phase oxide deposition methods. However, sol-gel oxide semiconductors typically require high post-processing temperatures (≥400 °C) to efficiently convert hydroxides (M-OH) to an extensive metal oxide network (M-O-M), which enables high mobility. The high temperature required for the oxide conversion hinders their use on plastic substrates, so alternative thermal processing routes are being investigated. Photonic Curing is particularly well-suited for this application because it was designed to rapidly heat a thin film to several hundred degrees on a low-temperature substrate (e.g. plastic) without damaging the substrate [1]. Photonic curing is a type of flashlamp annealing that uses short, intense pulses of broadband light from a xenon flashlamp (200–1100 nm, typically 1–2 ms pulses delivering 1–5 J/cm2) to heat the near-surface of the device stack, while most of the plastic substrate remains near room temperature. This can be accomplished due to the rapid (nonequilibrium) nature of photonic curing. Photonic curing also has other advantages over traditional thermal processing methods, including compatibility with large-area, high-throughput roll-to-roll fabrication. In the past, photonic curing has been primarily used to cure printed metal films, but recently there has been significant interest in photonic curing oxide semiconductors.","PeriodicalId":200504,"journal":{"name":"2022 Device Research Conference (DRC)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125576530","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Self-Heating characterization and modeling of 5nm technology node FinFETs 5nm技术节点finfet的自热特性与建模

2022 Device Research Conference (DRC) Pub Date : 2022-06-26 DOI: 10.1109/DRC55272.2022.9855797

S. S. Parihar, Jun Z. Huang, Weike Wang, K. Imura, Y. Chauhan

引用次数: 1

Table of Content 目录表

2022 Device Research Conference (DRC) Pub Date : 2016-12-31 DOI: 10.1109/DRC55272.2022.9855812

A. .

引用次数: 0