5nm技术节点finfet的自热特性与建模

2022 Device Research Conference (DRC) Pub Date : 2022-06-26 DOI:10.1109/DRC55272.2022.9855797

S. S. Parihar, Jun Z. Huang, Weike Wang, K. Imura, Y. Chauhan

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引用次数: 1

摘要

现代集成电路即使在GHz频率下工作也会遭受严重的自热(SH)。在这项工作中，我们首次提出了5nm节点FinFET器件的热阻抗表征和建模。n-型(~5 GHz)和p型(~2.5 GHz)器件的等温频率(fiso)的显著差异是一个重要的实验观察结果。校准SPICE模拟显示温度上升40-70°C。

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Self-Heating characterization and modeling of 5nm technology node FinFETs

Modern-day integrated circuits suffer from severe self-heating (SH) even when operating at GHz frequencies. In this work, we present the thermal impedance characterization and modeling for 5nm node FinFET devices for the first time. Considerable difference in iso-thermal frequencies (fiso) for n- (~5 GHz) and p-type (~2.5 GHz) devices is a crucial experimental observation. Calibrated SPICE simulation shows a 40–70 °C rise in the temperature.

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2022 Device Research Conference (DRC)

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