在单晶AlN衬底上首次展示n极性GaN/AlGaN/AlN HEMT

2022 Device Research Conference (DRC) Pub Date : 2022-06-26 DOI:10.1109/DRC55272.2022.9855776

Eungkyun Kim, Zexuan Zhang, J. Singhal, K. Nomoto, A. Hickman, M. Toita, D. Jena, H. Xing

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引用次数: 0

摘要

氮化镓的宽带隙和高电子速度使其在商业和国防毫米波应用中都具有很高的吸引力。氮化镓高电子迁移率晶体管(GaN hemt)目前可以在毫米波频率下提供高功率，从而抵消这些频率下的高大气衰减。然而，基于GaN hemt的功率放大器仍然受到散热问题的限制，这突出了热管理在hemt中的重要性。

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First demonstration of N-polar GaN/AlGaN/AlN HEMT on Single Crystal AlN Substrates

Gallium nitride's wide bandgap and high electron velocity make it highly attractive for both commercial and defense mm-wave applications. Gallium nitride high-electron-mobility-transistors (GaN HEMTs) today can supply high power at millimeter-wave frequencies, thereby counteracting high atmospheric attenuation at these frequencies [1]. However, power amplifiers based on GaN HEMTs continue to be limited by heat dissipation issues, highlighting the importance of the thermal management in HEMTs.

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2022 Device Research Conference (DRC)

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