Self-Heating characterization and modeling of 5nm technology node FinFETs

Abstract

Modern-day integrated circuits suffer from severe self-heating (SH) even when operating at GHz frequencies. In this work, we present the thermal impedance characterization and modeling for 5nm node FinFET devices for the first time. Considerable difference in iso-thermal frequencies (fiso) for n- (~5 GHz) and p-type (~2.5 GHz) devices is a crucial experimental observation. Calibrated SPICE simulation shows a 40–70 °C rise in the temperature.