2022 Device Research Conference (DRC)最新文献_第3页

Analysis of BTI in 300 mm integrated dual-gate WS2 FETs 300mm集成双栅极WS2场效应管的BTI分析

2022 Device Research Conference (DRC) Pub Date : 2022-06-26 DOI: 10.1109/DRC55272.2022.9855819

L. Panarella, Q. Smets, D. Verreck, T. Schram, D. Cott, I. Asselberghs, B. Kaczer

引用次数: 1

Artificial Neural Network Surrogate Models for Efficient Design Space Exploration of 14-nm FinFETs 14nm finfet高效设计空间探索的人工神经网络代理模型

2022 Device Research Conference (DRC) Pub Date : 2022-06-26 DOI: 10.1109/DRC55272.2022.9855816

Surila Guglani, A. Dasgupta, M. Kao, Chenming Hu, Sourajeet Roy

引用次数: 3

Statistical Analysis of 2T1R Gain-Cell RRAM Bitcell for Area Efficient, High-Performance, and Reliable Multi-level Cell Operation 区域高效、高性能、可靠多级小区操作的2T1R增益单元RRAM位元统计分析

2022 Device Research Conference (DRC) Pub Date : 2022-06-26 DOI: 10.1109/DRC55272.2022.9855783

Rishab Mehra, S. T. Nibhanupudi, J. Kulkarni

引用次数: 2

Fully Epitaxial Ferroelectric III-Nitride Semiconductors: From Materials to Devices 完全外延铁电iii -氮化物半导体:从材料到器件

2022 Device Research Conference (DRC) Pub Date : 2022-06-26 DOI: 10.1109/drc55272.2022.9855651

Ping Wang, Ding Wang, Shubham Mondal, Z. Mi

{"title":"Fully Epitaxial Ferroelectric III-Nitride Semiconductors: From Materials to Devices","authors":"Ping Wang, Ding Wang, Shubham Mondal, Z. Mi","doi":"10.1109/drc55272.2022.9855651","DOIUrl":"https://doi.org/10.1109/drc55272.2022.9855651","url":null,"abstract":"Recent studies have shown that the incorporation of scandium (Sc) can transform conventional III -nitride semiconductors to be ferroelectric, with switchable polarization and significantly enhanced electrical, piezoelectric, and nonlinear optical properties. These unique characteristics, together with its tunable ultrawide bandgap, have made ScAlN one of the most promising semiconductors for future high-power, high-frequency, and high-temperature electronics, acoustic resonators and filters, micro/nano-electromechanical systems (MEMS), neuromorphic and edge computing/intelligence. Sputter deposition has been widely employed for the synthesis of ScAlN films, which show limited material quality. Recently, great progress has been made in the epitaxial growth of single-crystalline wurtzite phase ScAlN utilizing standard epitaxial approaches, including molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD), which enable the seamless integration with the mature Si-based and GaN-based technologies. To date, however, the realization of ferroelectric ScAlN has been largely limited to sputter deposition. 1 It has remained a daunting challenge to achieve single crystalline ferroelectric Sc-III-nitrides. Moreover, the currently reported ScAlN exhibits extremely high unintentional impurities (e.g., 0 and C), which severely limit their practical device application.2 Therefore, the ability to improve the material quality, realize robust ferroelectric polarization switching, and demonstrate device concepts of fully epitaxial ScAlN -based heterostructures is essential for the emerging applications of Sc-III-nitrides.","PeriodicalId":200504,"journal":{"name":"2022 Device Research Conference (DRC)","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134333255","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Mobility Enhancement of Monolayer MoS2 Transistors using Tensile-Stressed Silicon Nitride Capping Layers 利用拉伸应力氮化硅封盖层增强MoS2单层晶体管的迁移率

2022 Device Research Conference (DRC) Pub Date : 2022-06-26 DOI: 10.1109/DRC55272.2022.9855790

Marc Jaikissoon, Jerry A. Yang, Kathryn M. Neilson, E. Pop, K. Saraswat

引用次数: 2

Buried-Channel Ferroelectric FET as Energy Efficient and Reliable 1T-NVM 埋沟道铁电场效应管作为高效可靠的1T-NVM

2022 Device Research Conference (DRC) Pub Date : 2022-06-26 DOI: 10.1109/DRC55272.2022.9855778

Saikat Chakraborty, J. Kulkarni

{"title":"Buried-Channel Ferroelectric FET as Energy Efficient and Reliable 1T-NVM","authors":"Saikat Chakraborty, J. Kulkarni","doi":"10.1109/DRC55272.2022.9855778","DOIUrl":"https://doi.org/10.1109/DRC55272.2022.9855778","url":null,"abstract":"The unprecedented growth in the adoption of Deep Neural Networks (DNN) for variety of ML/AI applications has resulted into a data deluge [1]. Among the prevalent and emerging memories, Ferroelectric Field Effect Transistor (FeFET) based memory [2]–[4], which leverages recently discovered ferroelectric properties in Hafnium/Zirconium oxides (HZO), is very promising as along with CMOS compatibility it can offer the non-volatility, dense 1-Transitor bitcells, high speed read operation, and multi-level-cell functionality. Despite the promising attributes, critical fundamental roadblocks exist in the FeFET advancement such as high program/erase voltage (±4V), poor reliability due to thin inter-layer dielectric (ILD) experiencing high electric field and large depolarizing field degrading the retention time [1], [2]. Several works have addressed these issues by introducing a circular channel geometry in recessed-channel FeFET (C-FeFET) [5], decoupling the ferroelectric layer from the MOSFET in Ferroelectric-Metal-FET (FeMFET) [6] or by connecting multiple Metal-Ferroelectric-Metal (MFeM) capacitors to the MOSFET gate terminal forming a multiple-FeMFET [7] (Fig. 1). However, C-FeFET reduces the write voltage in a limited manner because of significant voltage drop across the ILD. FeMFET or multiple-FeMFET introduces floating intermediate node between MFeM capacitor and MOSFET gate stacks which increases the depolarizing field.","PeriodicalId":200504,"journal":{"name":"2022 Device Research Conference (DRC)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130278332","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Pulsed Current-Voltage Protocol to Reveal Polarization-Continuation in Ferroelectric Memory: Implications for Partial State Storage 揭示铁电存储器中极化延续的脉冲电流-电压协议:部分状态存储的含义

2022 Device Research Conference (DRC) Pub Date : 2022-06-26 DOI: 10.1109/DRC55272.2022.9855808

Mir Muntasir Hossain, P. Pandey, Akif Aabrar, K. González-Serrano, T. Moise, John Rodriguez, K. Udayakumar, S. Datta, A. Seabaugh

{"title":"Pulsed Current-Voltage Protocol to Reveal Polarization-Continuation in Ferroelectric Memory: Implications for Partial State Storage","authors":"Mir Muntasir Hossain, P. Pandey, Akif Aabrar, K. González-Serrano, T. Moise, John Rodriguez, K. Udayakumar, S. Datta, A. Seabaugh","doi":"10.1109/DRC55272.2022.9855808","DOIUrl":"https://doi.org/10.1109/DRC55272.2022.9855808","url":null,"abstract":"Analog weight storage in polycrystalline hafnium zirconate, HfZrO4, (HZO) ferroelectric capacitors has been widely explored for use in two-terminal ferroelectric (Fe) memory [e.g. 1–3]. Read-out in commercial Fe random access memory (FRAM) is destructive; the polarization switching current is sensed to read the charge state, followed by a data restore [4]. It is desirable to realize a nondestructive resistive read, and in this paper we utilize pulsed measurements to obtain the transient current-voltage (I-V) characteristic at switching speeds commensurate with the memory. While HZO has been shown to switch at sub-ns speeds this short switching speed is achieved using pulse voltages more than 4 times the coercive voltage (8.7 V, 10ns, 10 nm HZO), i.e. with enough field strength and duration to fully polarize the Fe [5]. In contrast, at the lower voltages used to set the polarization to an intermediate value, the settling time becomes a function of the pulse amplitude and sequence. It has been shown that current transients associated with setting the partially polarized state in HZO can be surprisingly long, even up to 1 s, depending on the pulse sequence [6]. In this paper we present a new pulse measurement protocol applied to the characterization of the transient I-V at speeds specific to the application. This data reveals the current transient associated with polarization continuation after the slew interval and can be used to validate SPICE models at pulse speeds of interest to the design.","PeriodicalId":200504,"journal":{"name":"2022 Device Research Conference (DRC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130379305","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Controllable Defect Engineering in 2D-MoS2 for high-performance, threshold switching memristive devices 用于高性能阈值开关忆阻器件的2D-MoS2可控缺陷工程

2022 Device Research Conference (DRC) Pub Date : 2022-06-26 DOI: 10.1109/DRC55272.2022.9855777

Asmita S. Thool, Sourodeep Roy, A. Misra, B. Chakrabarti

引用次数: 0

Experimental demonstration of sub-nanosecond switching in 2D hexagonal Boron Nitride resistive memory devices 二维六方氮化硼阻性存储器件亚纳秒开关的实验演示

2022 Device Research Conference (DRC) Pub Date : 2022-06-26 DOI: 10.1109/DRC55272.2022.9855793

S. T. Nibhanupudi, D. Veksler, A. Roy, Matthew J Coupin, Kevin C. Matthews, Jamie H. Warner, G. Bersuker, J. Kulkarni, S. Banerjee

引用次数: 1

The Path Towards Realistic ASIC Electronics Deployment Into Previously Impractical Extreme Application Environments 通往现实的ASIC电子部署到以前不切实际的极端应用环境的道路

2022 Device Research Conference (DRC) Pub Date : 2022-06-26 DOI: 10.1109/DRC55272.2022.9855806

P. Neudeck, D. Spry, M. Krasowski, Liangyu Chen

{"title":"The Path Towards Realistic ASIC Electronics Deployment Into Previously Impractical Extreme Application Environments","authors":"P. Neudeck, D. Spry, M. Krasowski, Liangyu Chen","doi":"10.1109/DRC55272.2022.9855806","DOIUrl":"https://doi.org/10.1109/DRC55272.2022.9855806","url":null,"abstract":"Substantial expansion of the practical environmental envelope for integrated circuit (IC) operation offers important benefits to a variety of automotive, aerospace, deep-well drilling, and manufacturing applications [1]. ICs that can reliably operate for long time periods (years) in a harsh environment without degradation or need of diagnostic/maintenance intervention enable the largest benefits compared to IC technologies requiring added shielding, cooling, remote-location, maintenance, or other overhead to perform beneficial system functions. The ability to “cold-start” at low temperature (T ≤ −55°C) and continuously function through “warm-up” to extreme temperature is also important to most applications. Fig. 1 illustrates the massive difference between a Venus lander mission that relies on sheltering electronics from the caustic 91-atmosphere pressure 460°C surface environment (600 kg lander that returns data for less than a day) compared to the mission possible with electronics that can function for long duration without need of environmental sheltering (20 kg lander that operates for 60 days) [2], [3].","PeriodicalId":200504,"journal":{"name":"2022 Device Research Conference (DRC)","volume":"33 Suppl 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124329319","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0