Experimental demonstration of sub-nanosecond switching in 2D hexagonal Boron Nitride resistive memory devices

Abstract

Resistive switching in 2D materials such as hexagonal boron nitride (hBN) and Transition Metal Dichalcogenides (TMDs) have been demonstrated recently [1]–[3]. These memory devices with an ultra-thin switching layer have the potential to achieve low operating voltages, low variability and are also suitable for flexible electronic applications [4]. Here we report the first experimental observation of sub-nanosecond switching of 2D hBN based resistive random access memory (RRAM) devices. This is the fastest switching speed in 2D RRAMs, surpassing the previously reported 5ns switching [5]. Devices also exhibit consistent repeatable switching between high-low memory states with ultra-short pulses (pulse-width ~ 2.7ns).