300mm集成双栅极WS2场效应管的BTI分析

2022 Device Research Conference (DRC) Pub Date : 2022-06-26 DOI:10.1109/DRC55272.2022.9855819

L. Panarella, Q. Smets, D. Verreck, T. Schram, D. Cott, I. Asselberghs, B. Kaczer

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引用次数: 1

摘要

尽管2D场效应晶体管(2D FET)具有良好的性能，但大多数2D场效应晶体管(2D FET)原型存在高偏置温度不稳定性(BTI)[1]，[2]和栅极转移特性的滞后[3]，导致可靠性差[4]。由于这个原因，需要特别的努力来提高栅极氧化物的质量及其与二维材料的界面。

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Analysis of BTI in 300 mm integrated dual-gate WS2 FETs

Despite their promising performance, the majority of 2D field-effect transistor (2D FET) prototypes suffers from high bias temperature instability (BTI) [1], [2] and hysteresis [3] of their gate transfer characteristics, which lead to poor reliability [4]. For this reason, a special effort is required in order to improve the quality of gate oxides and their in-terface with 2D materials.

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2022 Device Research Conference (DRC)

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