Analysis of BTI in 300 mm integrated dual-gate WS2 FETs

Abstract

Despite their promising performance, the majority of 2D field-effect transistor (2D FET) prototypes suffers from high bias temperature instability (BTI) [1], [2] and hysteresis [3] of their gate transfer characteristics, which lead to poor reliability [4]. For this reason, a special effort is required in order to improve the quality of gate oxides and their in-terface with 2D materials.